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Apple May Debut M5 Ultra-Powered Mac Studio at WWDC, Boosting Demand for TSMC N3P and SoIC-mH

　　Apple’s annual Worldwide Developers Conference (WWDC) is set to kick off on June 9. According to Commercial Times, beyond updates to Apple Intelligence, Siri, and macOS 27, market attention is focused on whether a next-generation Mac Studio powered by Apple’s M5 Ultra chip will also make an appearance.　　The M5 Ultra is expected to retain Apple’s UltraFusion dual-die architecture, combining two M5 Max dies and delivering interconnect bandwidth of more than 1,000GB/s. Specifications are rumored to include a 36-core CPU, an 84-core GPU, and up to 512GB of unified memory, the report adds.　　Notably, as the report highlights, TSMC’s N3P is expected to serve as the key manufacturing foundation for the M5 Ultra, potentially adding to demand for already tight 3nm capacity.　　TSMC’s SoIC-mH Emerges as Potential M5 Ultra Enabler　　TSMC’s advanced packaging is also expected to play a key role in boosting the performance of the M5 Ultra. According to institutional investors cited by Commercial Times, SoIC-mH could emerge as a core technology platform if Apple adopts a higher-density heterogeneous integration approach alongside its UltraFusion high-speed interconnect architecture.　　As TechNews notes, SoIC-mH uses a molded horizontal packaging architecture and integrates multiple chips directly at the wafer level through no-bump hybrid bonding technology. The approach can increase packaging density, improve signal transmission efficiency, and enhance thermal performance.　　In addition, TechPowerUp notes that TSMC’s SoIC-mH allows Apple to separate the CPU and NPU from the GPU. This enables Apple to scale CPU clusters and GPU dies independently, adding more cores as needed. The approach also gives Apple greater flexibility to expand its product lineup without pushing die sizes close to the 830 mm² reticle limit. According to the report, this can improve yields and reduce defects associated with larger silicon dies.　　Despite these potential advantages, the launch timing of the next-generation Mac Studio remains uncertain. According to Macworld, citing Bloomberg, supply-chain constraints are affecting production of Apple’s next-generation professional Macs and could delay the debut of the M5 Ultra-powered system until October 2026.　　Touchscreen MacBooks Could Create New Opportunities for TSMC　　Meanwhile, macOS 27 is another key focus of this year’s WWDC. Commercial Times notes that Apple is expected to strengthen touch support features, laying the groundwork for future touchscreen MacBooks through the early adoption of on-cell touch panel integration.　　Institutional investors cited by the report say that the shift toward OLED displays and touch-enabled MacBooks is expected to drive demand for upgraded display driver ICs, TDDI chips, and touch controllers, while also benefiting TSMC’s specialty process. The report adds that TSMC has completed reliability certification for its 16nm high-voltage process platform and is set to enter the yield-validation stage in 2026, potentially helping customers develop more competitive OLED display driver ICs.

Key word：

Apple

Release time：2026-06-09 13:50 reading：163 Continue reading>>

Trade news

SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion

　　TrendForce　　SK hynix is reportedly preparing a major DRAM capacity expansion. According to The Elec, the company has shared plans with key suppliers to nearly double its DRAM wafer production capacity by 2030–2031 from current levels. The plan aligns with comments made by SK Group Chairman Chey Tae-won at Computex 2026, where he said the company would “double overall wafer production capacity within five years at full speed.”　　The report says SK hynix aims to raise monthly DRAM wafer capacity from about 550,000 wafers today to roughly 1 million wafers by 2030. The current figure includes around 200,000 wafers per month from its Wuxi fab in China.　　Much of the expansion will be centered on the Yongin Semiconductor Cluster. According to the report, SK hynix plans to divide its first Yongin fab into six cleanrooms and has moved up the first equipment installation schedule from May 2027 to February 2027. The fab is expected to add 360,000 wafers per month of DRAM capacity by the first half of 2030.　　SK hynix is also expanding its M15X fab in Cheongju. The report says the facility is scheduled to begin operations in the second half of 2026 with an initial capacity of 40,000 wafers per month, rising to about 80,000 wafers per month in 2027.　　Combined with the additional output from Yongin, SK hynix’s total DRAM wafer input capacity could approach 1 million wafers per month between 2030 and 2031, according to the report.　　Notably, all newly added capacity is currently designated for DRAM production, the report notes. For NAND flash, SK hynix is expected to focus on technology upgrades, such as increasing layer counts, rather than significant capacity expansion.　　Equipment Suppliers See Near-Term Gains, but Remain Cautious　　The expansion of the Yongin Semiconductor Cluster is drawing a growing number of semiconductor equipment and materials suppliers. According to iNews24, equipment and materials suppliers continue to move into the Yongin Semiconductor Cluster. South Korean materials, parts, and equipment firms, along with ASML, Lam Research, and Tokyo Electron Korea, have either relocated or are in the process of moving in.　　However, The Elec notes that suppliers remain cautious about execution given the scale and pace of the expansion plan. Supplier sources cited by the report said the increased investment is expected to provide a meaningful near-term boost for equipment and materials vendors, though achieving the full expansion target will ultimately depend on whether market demand remains strong enough to support it.　　Samsung Also Accelerating DRAM Expansion　　As for Samsung, according to Digital Daily, Samsung Electronics is accelerating DRAM capacity expansion at its P4 fab in Pyeongtaek by bringing forward its investment schedule. The report says Samsung’s DRAM investment next year could increase by roughly 10,000 wafers per month above previous estimates. Some industry observers also expect Samsung to begin issuing purchase orders for the P5 line from the second quarter of next year, potentially supporting investment equivalent to 150,000 wafers per month in 2027.

Key word：

SK hynix

Release time：2026-06-08 10:46 reading：215 Continue reading>>

Trade news

TSMC Rejects High-NA EUV Investment Concerns, Confirms Purchase for R&D Use

　　As Intel advances its High-NA EUV roadmap for its A14 node, market attention has turned to TSMC’s comparatively cautious approach to the cutting-edge lithography tool, which is estimated to cost around US$400 million per system.　　However, at its June 4 shareholder meeting, TSMC Chairman C.C. Wei rejected speculation that the company had opted not to invest in High-NA EUV. According to TechNews, he stressed that TSMC has already purchased the equipment and is actively conducting R&D.　　Wei explained that the main reason the High-NA EUV system has not yet been introduced into mass production is purely cost-related. The company will continue working to improve efficiency and reduce costs, and will move the technology into production once conditions are ready, TechNews reports.　　Interestingly, Wei also added with a touch of humor that TSMC is not only investing in the technology but has already purchased the tools, noting that “it would even be a bit embarrassing to say how many.” As previously reported by Tom’s Hardware, citing Kevin Zhang, senior vice president of business development and global sales and deputy COO at TSMC, TSMC’s upcoming A13 and A12 processes, both targeted for 2029, are not expected to require High-NA EUV lithography tools.　　This contrasts with Intel’s strategy for its 14A node and subsequent generations, which are set to adopt High-NA EUV starting in 2027–2028, according to Tom’s Hardware. Reuters, citing ASML CEO Christophe Fouquet, also reported in May that the semiconductor equipment giant expects to see the first memory and logic products manufactured on High-NA EUV systems within the next few months.　　TSMC Reaffirms Strong Capex Outlook　　Against this backdrop, TSMC reaffirmed its capital expenditure plans to support sustained growth. According to TechNews, when investors asked Chairman C.C. Wei how long the company’s current investment cycle would last and when a potential “plateau period” might emerge, he said TSMC remains highly confident in its multi-year outlook, supported by forecasts from both customers and “customers’ customers,” with the company’s growth trajectory expected to continue upward.　　He noted that, as previously guided at the earnings call, capital expenditure for 2026 is projected to range between US$52 billion and US$56 billion, with an internal bias toward the upper end of US$56 billion, as noted by the report.　　Liberty Times adds that at TSMC’s annual shareholder meeting, C.C. Wei said in his opening remarks that the company achieved record-high revenue and profit last year, delivering strong operational results. He noted that TSMC’s share price has risen by more than 1.5 times over the past year, while cash dividend payouts have increased by over 30%.

Key word：

TSMC

Release time：2026-06-05 10:44 reading：322 Continue reading>>

Trade news

Intel Says 18A May Reach Strong Margins by 2027; Notebook Chips on the Node Mark Fastest Ramp in 5 Years

　　Intel is betting heavily on 18A to support the company’s turnaround plan. According to The Register, Chief Financial Officer David Zinsner said that early last year Intel faced the challenge of trying to improve both performance and yield at the same time. The company later shifted its focus to stabilizing performance first, and with that objective largely achieved, it is now concentrating on improving yield month by month.　　Zinsner said Intel’s goal is to achieve yield levels that support strong margins, adding that the company is currently ahead of schedule to reach that target by the end of 2027, as the report highlights. He added that after Lip-Bu Tan joined the company, Intel began sharing more manufacturing data with its vendors. The increased collaboration helped improve yields and made a dramatic difference.　　Looking beyond 18A, Zinsner also expressed confidence in Intel’s 14A. According to the report, he said the company has adopted a more aggressive approach than it did with 18A, adding that yield and performance metrics are currently ahead of where 18A was at the same stage of development.　　Intel 3 and 18A Supply Set to Rise Amid Strong CPU Demand　　In addition to providing an update on Intel’s manufacturing roadmap, Zinsner highlighted growing supply from Intel 3 and 18A, according to Seeking Alpha. As cited by the report, he said Intel expects a meaningful increase in supply from both Intel 3 and 18A over the coming quarters to meet rising demand. He added that 18A-based notebook processors are ramping quickly and represent the company’s fastest-ramping product launch in at least the past five years.　　The company is also seeing rising CPU demand. According to The Register, Zinsner said it remains difficult to predict the full extent of future growth, but he expects the market to be substantial. He said the key challenge at present is supply, adding that Intel sees sufficient demand in the market and should be able to grow data center revenue meaningfully if it executes successfully on planned supply ramps.

Key word：

Intel

Release time：2026-06-05 10:40 reading：320 Continue reading>>

Trade news

Memory Spot Price Update: DDR4 and DDR5 Extend Gains, Though Higher Quotes Temper Procurement Demand

　　According to TrendForce’s latest memory spot price trend report, in terms of DRAM, DDR4 and DDR5 spot prices continued to rise, with both segments posting notable gains. However, buyers remained cautious amid higher supplier quotes. In the NAND flash segment, spot quotations would continue to slump in the short term with major buy orders nowhere to be seen. Details are as follows:　　DRAM Spot Price:　　Building on last week’s momentum, spot prices on the whole have maintained an upward trajectory, with prices of both DDR4 and DDR5 chips registering notable gains. Despite the overall price increases, suppliers’ higher quotes have made buyers hesitant to chase further increases, thereby limiting actual procurement demand. The average spot price of mainstream chips (i.e., DDR4 1Gx8 3200MT/s) has increased by 3.57% from US$33.6 last week to US$34.8 this week.　　NAND Flash Spot Price:　　Continuing from clients’ profound wait-and-see sentiment last week, the spot market still lacks momentum this week, where the sizable differences towards price consensus between market participants are unable to actuate procurement. There have only been sporadic transactions thus far, with major buy orders nowhere to be seen, which also indicates how spot quotations would continue to slump in the short term. Spot prices of 512Gb TLC wafers climbed by 0.22% this week, arriving at US$20.683.

Key word：

Memory

Release time：2026-06-04 10:43 reading：353 Continue reading>>

Trade news

SK Chair Sees Memory Shortage Through 2030, Eyes Capacity Doubling and Stronger TSMC, Taiwan Ties

　　As next-gen HBM solutions has become a key focus at COMPUTEX amid surging AI demand, SK Group Chairman Chey Tae-won made a brief visit to the SK hynix booth on June 2 and spoke with the media. According to TechNews, Chey expects supply-demand tightness in the memory market to persist through 2030.　　Notably, he also said SK will make full efforts to expand production under tight supply conditions, targeting a doubling of total wafer capacity over the next five years, the report adds.　　Marking his first appearance at COMPUTEX, Chey noted that Taiwan has a highly complete AI supply chain and a strong partner ecosystem. As SK Group continues to expand its AI business, he stressed the need to deepen collaboration with more Taiwanese companies. Beyond TSMC, he said meetings with firms such as Foxconn and Asus are also part of this visit to better understand ongoing cooperation and explore ways to further strengthen partnerships, according to the report.　　SK hynix and TSMC have a long-standing partnership, particularly in logic die integration as custom HBM solutions become an emerging industry trend. As previously reported by The Chosun Daily, SK hynix is expected to adopt a 10nm-class 6th-generation (1c) DRAM process for the core die in its HBM4E, paired with a logic die built on TSMC’s 3nm node. For HBM4 supplied to NVIDIA this year, the company is said to be using a 10nm-class 5th-generation (1b) DRAM core die alongside a logic die based on TSMC’s 12nm process.　　Jensen Huang’s SK hynix Booth Visit Marks Another COMPUTEX Highlight　　It is also wort noting that NVIDIA CEO Jensen Huang also visited the SK hynix booth at COMPUTEX 2026 on June 2, meeting SK Group Chairman Chey Tae-won for the second consecutive day, following a dinner meeting the previous evening. According to Chosun Biz, after his keynote the day before—where he directly identified SK hynix as a supplier of next-generation HBM4—Huang toured the exhibition floor and reviewed the company’s latest memory products.　　During the visit, Huang joined Chey at the SK hynix booth to examine the showcased portfolio, including HBM4E wafers and chipset samples, which entered sampling at the end of last month, the report says. It also marked the first public unveiling of an HBM4E physical mock-up, according to Chosun Biz.

Key word：

SK

Release time：2026-06-03 10:57 reading：384 Continue reading>>

Trade news

NVIDIA Enters PC Market with RTX Spark Featuring MediaTek-Co-Designed N1X CPU on TSMC 3nm

　　As traditional CPU leaders such as Intel push further into the AI accelerator market, NVIDIA is moving in the opposite direction—leveraging its dominance in AI computing to expand into the PC processor arena. At GTC Taipei on June 1, CEO Jensen Huang unveiled the NVIDIA RTX Spark, developed in partnership with Microsoft and powered by the new Arm-based N1X processor co-designed with MediaTek, according to NVIDIA and CNBC.　　According to CNBC, the initial rollout will include more than 30 notebook models and 10 desktop systems. RTX Spark-powered devices from Microsoft, Dell, HP, ASUS, Lenovo, and MSI are expected to debut this fall, marking NVIDIA’s first large-scale push into the Windows PC CPU market.　　CNBC adds that the platform combines NVIDIA’s Blackwell GPU architecture with the N1X CPU and 128GB of unified memory, bringing data center-class AI capabilities to personal computers. Notably, the new PC processor will be manufactured using TSMC’s 3nm process, which is currently produced exclusively in Taiwan, according to CNBC.　　More Spec Details　　Interestingly, as noted by The Verge, the flagship RTX Spark mirrors the DGX Spark almost exactly — 20 CPU cores, 6,144 GPU cores, 128GB of LPDDR5X memory — though NVIDIA plans to release leaner, more affordable variants, with some configurations dropping to just 16GB of RAM.　　Meanwhile, NVIDIA has provided additional details on the platform’s performance. According to The Verge, with up to 128GB of unified memory—on par with AMD’s previous-generation Strix Halo—RTX Spark laptops and desktops are also capable of hosting AI agents with up to 120 billion parameters, a capability Microsoft appears eager to integrate into Windows.　　Powered by RTX Spark, NVIDIA claims the system can render a 90GB 3D scene, edit 12K video, or run graphically intensive titles like Indiana Jones and the Great Circle at a smooth 100fps in 1440p—all within a 14mm-thin laptop operating without being plugged into power, the report adds.　　CNBC, citing an NVIDIA spokesperson, reports that RTX Spark is described as being “roughly equivalent” to the company’s flagship RTX 5070 laptop GPU.　　NVIDIA is certainly not the only player eyeing to expand its CPU footprint. As noted by CNBC, Apple now designs its own Arm-based processors for Mac computers, having rolled out a higher-end MacBook lineup powered by its latest M5 chips in March. In the same month, Arm unveiled its first in-house CPU, with Meta reportedly serving as the launch customer for the Arm AGI CPU, according to TechCrunch.

Key word：

NVIDIA

Release time：2026-06-02 10:29 reading：464 Continue reading>>

Trade news

Nexperia China Says MOSFET, Logic IC Supply Chains Complete as Independent Operations Largely in Place

　　After last year’s control dispute between Wingtech and Nexperia’s Netherlands headquarters sent shockwaves through the industry, Nexperia China now says it has made significant progress in building independent operations. According to EE Times China, Wingtech Chairwoman Ruby Yang announced on May 29 that Nexperia China has largely completed the setup of its independent operating system.　　Yang revealed that Nexperia China’s core management, R&D, and market teams are now fully based in China. The report notes that the company’s capacity and delivery capabilities have steadily recovered, while it continues to build a “China for China, China for Global” full-stack supply chain across wafer manufacturing, packaging and testing, and quality control.　　The announcement comes as Wingtech faces mounting pressure. According to ESM China, the company said on April 29 that its auditor issued a “disclaimer of opinion” on its 2025 financial report, triggering a delisting risk warning under relevant rules.　　Full-Stack Supply Chains Advance Across Key Product Lines　　In terms of product layout, Nexperia China currently covers three core business lines: MOSFETs, logic ICs, and bipolar transistors, including protection devices. Yang said none of the three previously had a fully domestic, full-stack supply chain. However, according to the report, MOSFET and logic IC products have now established such supply chains.　　The bipolar transistor line is being upgraded to a 12-inch platform and is expected to complete its full-stack domestic supply chain within 2026. Bipolar transistors entered small-batch mass production in March 2026, with capacity for protection devices such as ESD (Electrostatic Discharge) and TVS (Transient Voltage Suppressor) products expected to gradually come online in the second half of 2026, the report notes.　　Under the plan, 19 products are expected to be ready for supply by next month, covering more than 80% of demand, the report adds. Despite the severe supply-chain fallout from last year’s Wingtech-Nexperia control dispute, the report indicates that Nexperia China has maintained large-scale delivery capabilities. Since mid-October 2025, it has shipped more than 11 billion chips to over 800 customers.　　Wingtech Seeks Court Action in Nexperia Control Dispute　　Meanwhile, the battle for control of Nexperia has escalated further. According to South China Morning Post, Wingtech said last week that it had filed a lawsuit in a court in China’s southern Guangdong province against Nexperia and three of its executives. The suit demands the restoration of full corporate control and 8 billion yuan, or US$1.18 billion, in compensation.　　As Bloomberg notes, Wingtech asked the court to order the defendants to stop carrying out or supporting the disputed measures, including by withdrawing legal proceedings in the Netherlands and revoking a Dutch ministerial order issued last September under the Goods Availability Act. If the defendants fail to comply, Wingtech would seek the transfer of Nexperia and related subsidiaries to the company free of charge.

Key word：

Nexperia China

Release time：2026-06-02 10:25 reading：407 Continue reading>>

Trade news

Japan–U.S. NAND Alliance Steps Up Investment as Kioxia–SanDisk Capex Reportedly Rises 40% YoY

　　As South Korea’s memory giants shift focus toward 1c DRAM capacity expansion amid surging demand, Global Economic, citing German tech outlet ComputerBase, reports that the Kioxia–SanDisk alliance is moving fast to reassert its position in the NAND market, capitalizing on an investment gap as Samsung Electronics and SK hynix divert resources toward HBM.　　According to the reports, the U.S.–Japan NAND consortium is expected to execute total capital expenditure of $4.5 billion (about KRW 6.75 trillion) in the current fiscal year, marking a 41% year-on-year increase.　　Notably, a key focus of the alliance would likely be the 10th-generation NAND. Nikkei previously reported that Kioxia plans to begin mass production at its Kitakami site in Iwate Prefecture in 2026. However, given the jump to a 332-layer architecture—up from 218 layers in its 8th-generation devices—the company is expected to repurpose its newly operational Kitakami K2 facility, which began production in September, to support output, according to Nikkei.　　ComputerBase, cited by Global Economic, attributes the strong NAND demand supporting Kioxia–SanDisk’s investment to a structural shift in AI workloads: As AI moves from the training-heavy infrastructure build-out phase to large-scale inference deployment, demand is rising for high-performance, ultra-high-capacity storage.　　At the same time, storage is accounting for a growing share of hyperscaler data center capex, while SSD capacity per GPU is more than doubling year over year, the report notes. As a result, next-gen AI servers are increasingly being designed with tens of terabytes of storage per GPU, driving a sustained surge in NAND demand, the report adds.　　Fewer Layers, Comparable Density　　ZDNet also reports that in its recent earnings briefing, Kioxia identified the launch of 10th-generation BiCS NAND as a key priority for fiscal 2026 (April 2026–March 2027). The report adds that the company applies its proprietary BiCS (Bit Cost Scalable) architecture to its scaling roadmap, with the 10th-generation device delivering 59% higher storage density per unit area and a 33% improvement in data transfer speed compared with the 218-layer generation.　　According to ComputerBase, Kioxia’s stacking approach enables comparable density with fewer layers, translating into meaningful cost advantages. A lower stack height also simplifies vertical etching, reduces high-cost equipment runtime, and helps mitigate wafer warpage defects.　　Based on 3D NAND density estimates cited by Global Economic from ComputerBase, Kioxia / SanDisk BiCS10 is projected to reach 37.6Gb per square millimeter in QLC configuration, which would surpass Samsung Electronics’ upcoming 430-layer V10 TLC architecture at around 28.0Gb.　　Samsung, SK hynix Hold Back　　However, TrendForce indicates that major NAND Flash suppliers will add virtually no new production capacity in 2026, and it seems that South Korean memory players are taking a different approach with Kioxia and SanDisk.　　As highlighted by Global Economic, Samsung Electronics and SK hynix have both adjusted their 10th-generation NAND ramp-up schedules: Samsung has reportedly pushed back its V10 production timeline from the second half of 2025 to 2026, while SK hynix is targeting early 2027 for full-scale production.　　ZDNet also reports that Samsung Electronics had initially planned to begin mass production of its 430-layer 10th-generation NAND this year, but the timeline has been delayed to at least 2027, citing technical complexity and softer demand conditions. The report adds that Samsung is still reviewing investment timing, with no concrete equipment orders confirmed, and that SK hynix faces a similar situation.　　Global Economic notes that if the U.S.–Japan NAND alliance succeeds in lowering cost per terabyte and accelerating QLC enterprise SSD adoption, demand could shift more rapidly toward AI data center storage. Even so, Samsung and SK hynix remain competitive, supported by stable 9th-generation yields and strong enterprise SSD customer bases, the report adds.

Key word：

Kioxia

Release time：2026-06-01 10:45 reading：368 Continue reading>>

Trade news

Samsung Starts Shipping Industry-First HBM4E Samples 3 Months After HBM4 Ramp; Performance Up 20%+

　　Just months after rolling out HBM4 shipments in early 2026, Samsung has begun providing samples of the industry’s first 12-layer HBM4E to major global partners, according to the company’s latest press release.　　Given that HBM4 shares the same 1c DRAM process and 4nm base die architecture as HBM4E, and is already in mass production, industry observers suggest the newly shipped HBM4E samples are also well positioned to transition into mass production. Samsung adds that it plans to proceed with HBM4E mass production in line with client-specific timelines.　　Meanwhile, Samsung is also expanding mass production and supply of HBM4, which became the world’s first HBM4 to enter mass production and shipment in February. In December last year, Samsung’s HBM4 received top-tier evaluation after demonstrating an industry-leading 11.7Gbps speed in System-in-Package (SiP) testing, the final certification stage, the company adds.　　According to News1, the latest development makes Samsung the first to supply HBM4E. Industry observers cited by the report also noted that starting from HBM4, customer-specific design flexibility and stable large-scale supply capabilities will become even more critical. Against this backdrop, Samsung’s integrated strengths across memory, foundry, and advanced packaging are expected to stand out even more clearly, the report adds.　　HBM4E Upgrade with 20% Performance Boost, 30% Higher Capacity　　In terms of performance, Samsung notes that HBM4E marks a notable upgrade over the previous generation, offering a stable 14Gbps pin speed that can scale up to 16Gbps for more demanding AI workloads. Compared with HBM4, the new memory delivers over 20% higher performance and reaches bandwidth of up to 3.6TB/s per stack, significantly improving compute efficiency for large language models (LLMs) and next-generation AI systems.　　Additionally, Samsung’s 12-layer HBM4E is currently offered in a 48GB capacity, which is more than 30% higher than the previous generation. The company plans to expand the lineup to include 32GB (8-layer) and 64GB (16-layer) variants to better align with diverse customer requirements as well.　　From an efficiency standpoint, Samsung highlights that advanced low-power design techniques and an optimized packaging architecture have improved energy efficiency by 16% while reducing thermal resistance by more than 14% compared with the previous generation.　　HBM4E Progress Among Rivals　　Meanwhile, progress from SK hynix and Micron in HBM4E has come under closer market scrutiny following Samsung’s advances. According to Yonhap News Agency, SK hynix had initially planned to begin HBM4E sample shipments in the second half of this year, but recent reports indicate smoother-than-expected development progress, bringing forward its timeline.　　On the other hand, Micron said its first HBM4E product will follow JEDEC standards, with mass production ramp-up targeted for 2027, according to STOCK Analysis.

Key word：

Samsung

Release time：2026-05-29 10:18 reading：480 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi

model	brand	To snap up
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments
BP3621	ROHM Semiconductor

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