ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability
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ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability

　　ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.　　In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called “the pizza box type,” stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.　　ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.　　The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September 2025 (sample price: $37.0/unit, tax excluded). 　　Product Lineup　　Application Examples　　・Industrial equipment: Power supplies for AI servers and data centers, PV inverters, ESS (energy storage systems)　　・Consumer equipment: General power supplies　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Totem Pole PFC Circuit　　A highly efficient power factor correction circuit configuration that reduces diode losses by using MOSFETs as rectifier elements. The adoption of SiC MOSFETs enables high voltage withstand capability, high efficiency, and high-temperature operation for the power supply.
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Release time：2025-12-04 17:10 reading：219 Continue reading>>
ROHM launches RPR-0730: High-Speed, High-Precision Optical Sensor Featuring VCSEL Technology
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ROHM launches RPR-0730: High-Speed, High-Precision Optical Sensor Featuring VCSEL Technology

　　ROHM has developed the “RPR-0730”, analog compact optical sensor, capable of high-precision detection of fast-moving objects. This sensor can be widely utilized in consumer and industrial equipment applications, including printers and conveyor systems.　　As industrial and office equipment becomes increasingly sophisticated and automated, there is a growing demand for improved sensing technology accuracy. In applications such as label printers, material or product transport systems, and copiers, the need for technology that can identify objects more accurately is essential. Moreover, increased speed driven by productivity improvements makes the introduction of high-speed, high-precision optical sensors crucial.　　The RPR-0730 is a compact reflective optical sensor (photo reflector). It employs an infrared VCSEL, which offers higher directionality than LEDs, enabling detection of finer objects. Furthermore, by using a phototransistor with analog output as the receiver, the sensor achieves a response time of 10µs. This dual combination enables high-speed, accurate identification of fine lines as narrow as 0.1mm - previously difficult to detect with conventional LED light sources. As an addition to the existing digital output sensor “RPR-0720” series, RPR-0730 expands capability to applications requiring faster sensing, such as print detection in copiers, label printers, or rotational detection in motors and gears.　　The package is ultra-compact at 2.0mm × 1.0mm × 0.55mm and employs a visible light filtering resin to suppress interference from ambient light or sunlight. This enables stable detection even in environments with varying light conditions, such as factories or outdoors. The sensor can also be easily integrated into equipment requiring installation in small, confined spaces, like inside conveyors or precision instruments, making it suitable for a wider range of applications.　　Mass production of the new product commenced in October 2025 (sample price: $2.2/unit, tax excluded).　　Going forward, ROHM will continue to leverage its development expertise in light-emitting and light-receiving elements to create sensing products that meet customer needs, contributing to the miniaturization and enhanced convenience of various devices.　　Application Examples　　•Print detection, paper feed/jam detection in label printers, copiers, shredders, etc.　　•Object detection of packages/specimens, workpiece position detection in conveyance systems, automatic inspection equipment, etc.　　•Motor/gear rotational detection in industrial robots, etc.　　Terminology　　Photo reflector　　A type of optical sensor combining an emitting element and a receiving element. It illuminates an object and detects the intensity of the reflected light to measure the presence or distance of an object.　　VCSELL　　Abbreviation for Vertical Cavity Surface Emitting LASER. A type of laser light source, it is a semiconductor laser that can emit light directly from its surface. Compared to LEDs, it offers higher directionality and is suitable for high-precision sensing. Originally adopted for optical communication applications, its use as a light source for proximity sensors and distance sensors has been expanding in recent years.　　Phototransistor　　A transistor-type photoelectric conversion element that converts optical signals into electrical signals. It integrates a photodiode and a transistor, controlling the base current with light to output an amplified collector current.
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Release time：2025-12-04 17:04 reading：206 Continue reading>>
Murata develops integrated passive device for Semtech’s SX126X family
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Murata develops integrated passive device for Semtech’s SX126X family

　　Murata Manufacturing Co., Ltd. has developed a new integrated passive device (IPD) for use with the Semtech LoRa Connect™ SX126x family, which includes the SX1261, SX1262, and LLCC68 products. Using a proprietary low-temperature co-fired ceramic (LTCC) process, Murata has successfully replaced a series of discrete matching components of the SX1261/2 reference design with a single 2.00mm x 1.25mm size LTCC component.　　The IPD enables SX1261/2 radio designers to optimize for both size and performance using two dedicated parts. The LFB21892MDZ7F957 is optimized for US and European ISM bands, delivering the full output power for the US FCC bands. The LFB21892MDZ7F821 is optimized for Eurocentric designs that need to maximize the efficiency performance.　　“The Murata IPD offers the most efficient development path to realizing the full performance of the SX1261/2, featuring a miniaturized form factor that can significantly reduce board space,” says Arthur Kiang, Product Manager, RF Components, Murata. “The reduction in the number of matching components enables lower material costs and simplifies the design process, leading to shorter lead times. This integration also lowers the probability of soldering and manufacturing issues, as there is only one component to monitor in production.”　　“Semtech’s LoRa Connect™ SX126x family has become the trusted choice for LoRaWAN® networks and long-range IoT connectivity in applications from smart metering to industrial sensing,” says Carlo Tinella, product marketing director of wireless and sensing products at Semtech. “Murata’s IPD solution demonstrates the strength of our LoRa® ecosystem, helping radio engineers accelerate development while optimizing for both miniaturization and regulatory compliance. This partnership streamlines the path from design to deployment for millions of IoT devices being deployed globally.”　　Product samples are currently available, with mass production of the IPD commencing shortly.
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Release time：2025-11-28 17:33 reading：299 Continue reading>>
Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections
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Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced  that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.
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Release time：2025-11-06 15:35 reading：488 Continue reading>>
GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification
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GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, announced that its GD32F5xx and GD32G5xx Software Test Libraries have received IEC 61508 SC3 (SIL 2/SIL 3) functional safety certification from TÜV Rheinland.　　This milestone expands GigaDevice’s functional safety portfolio, which already includes the GD32H7 and GD32F30x STLs, and now covers a broad range of MCUs with Arm® Cortex®-M7, Cortex®-M4, and Cortex®-M33 cores. Building on this foundation, GigaDevice will continue to deliver high-performance and safety-focused hardware and software solutions for key applications such as industrial control, energy and power, and humanoid robotics.　　With the growing emphasis on safety across industries like industrial automation, functional safety has become a critical consideration in embedded system design. The GD32F5xx and GD32G5xx MCUs, based on the Arm® Cortex®-M33 core, have become key solutions for high-performance applications requiring robust safety measures.　　The GD32F5xx series is optimized for applications in energy and power management, photovoltaic energy storage, and industrial automation, where high precision and reliable control are essential.　　The GD32G5xx series combines excellent processing performance with a wide range of digital and analog interfaces. It is available in compact packages such as 81-pin WLCSP81 (4x4mm), making it ideal for applications in humanoid robotics, digital power systems, charging stations, energy storage inverters, servo motors, and optical communications.　　The GigaDevice STLs monitor GD32F5xx and GD32G5xx MCU modules in real-time to detect hardware faults. If a fault is detected, predefined safety mechanisms will be triggered to ensure the MCU always remains in a safe state, reducing potential risks and enhancing system reliability.　　This certification highlights GigaDevice's deep expertise in functional safety system design and its commitment to meeting the highest international safety standards, reinforcing its position as a trusted provider of secure, high-performance solutions for mission-critical industries.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.
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Release time：2025-11-04 17:01 reading：558 Continue reading>>
GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration
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GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, has officially opened its new office in Minato City, Tokyo. This milestone reflects the company's deepening commitment to the Japanese market and marks a significant step in enhancing local customer support, strengthening regional collaboration, and advancing its global development efforts.　　Japan has long served as a vital pillar of GigaDevice's global strategy. Over the years, the company has expanded its local team, refined operation to meet evolving customer needs, and established a responsive professional service system. This new office will further enhance GigaDevice's technical responsiveness and agility, foster closer collaboration with customers, and help accelerate product validation and commercialization in today's fast-changing market landscape.　　Working closely with customers in Japan, GigaDevice has broadened the adoption of its solutions across key application sectors such as industrial, automotive, consumer electronics, and the Internet of Things. At the same time, the company continues to deepen cooperation with local partners in supply chain integration and ecosystem development, offering a comprehensive portfolio of Flash memory, MCU, sensor, and analog solutions that have earned broad market recognition.　　"Japan has always been a vital component of our global strategy," said Jennifer Zhao, GigaDevice Global Business CEO. "We will continue to leverage our global synergy and strengthen local service capabilities to drive product innovation and industry advancement alongside our customers and partners."　　"We greatly value the trust and long-term partnerships we have built with our customers in Japan," added Sam Li, GigaDevice Japan Regional GM, "In a market that's becoming increasingly complex, our goal is to consistently deliver exceptional service and competitive products that meet diverse business needs and create lasting value."　　As one of GigaDevice's key customers, Nidec Corporation has been working closely with the company. Ryuji Omura, Head of Nidec Semiconductor Solutions Center, commented: "GigaDevice's rapid growth and technological innovation, along with its genuine commitment to customers, have built a solid foundation of trust between our companies and made it one of our most valued supplier partners. We look forward to seeing GigaDevice continue to lead the semiconductor industry and contribute to the advancement of society."　　As a global leading fabless supplier, GigaDevice continues to combine global synergy with localized execution. Following the establishment of its global headquarters in Singapore, the company has strengthened its presence across Asia, Europe, and the Americas, building a responsive, demand-driven sales and service network. Looking ahead, GigaDevice will continue to invest in Japan, refining its product offerings, enhancing its service delivery, and expanding its collaborative mechanisms to drive a smarter, more efficient, and sustainable future together with its customers and partners.
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Release time：2025-10-21 16:49 reading：612 Continue reading>>
TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers
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TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers

　　TAIYO YUDEN CO., LTD. has commercialized and begun mass production of embeddable multilayer ceramic capacitor (MLCC) that achieves a capacitance of 22-μF in a 1005M size (1.0 x 0.5 mm).　　This ceramic capacitor is an MLCC designed for decoupling applications on IC power lines used in AI servers and other types of information devices.　　Components embedded in a board require high precision in terms of flatness of the external electrodes for connection to the circuit. With respect to this requirement, TAIYO YUDEN has commercialized an embeddable MLCC that achieves a 22-μF capacitance in a 1005M size by enhancing external electrode formation technology and other elemental technologies.　　Mass production of the capacitor began at our Tamamura Plant (Sawa District, Gunma Prefecture) in August 2025. Samples are available for 20 yen per unit.　　Technology Background　　AI servers and other types of devices with advanced information processing capabilities are equipped with ICs that consume extremely large amounts of power. For decoupling purposes in such power supply circuits, small, high-capacity MLCCs are required to handle large currents.　　Additionally, to minimize circuit loss and noise, it is important to route the power supply circuit close to the ICs. Traditional power supply circuits are routed around ICs. But, technological developments are progressing, allowing them to be placed closer, such as on the back of the board or directly under the ICs. Thus, embeddable MLCCs need to be equipped with high-precision external electrodes to connect to the lines.　　To satisfy this need, TAIYO YUDEN has improved its external electrode formation technology and commercialized 1005M-size embeddable MLCC with a capacitance of 22 μF.　　TAIYO YUDEN is continuing to develop new MLCCs with higher capacitance and other distinguishing features.　　■ Application　　Decoupling applications on IC power lines used in AI servers and other types of information devices
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Release time：2025-10-20 16:40 reading：457 Continue reading>>
Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors
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Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced that it is supporting efficient power conversion and distribution for the 800 Volt Direct Current power architecture announced by NVIDIA, helping fuel the next wave of smarter, faster AI infrastructure.　　As GPU-driven AI workloads intensify and data center power consumption scales into multi-hundred megawatt territory, modern data centers must adopt power architectures that are both energy optimized and scalable. Wide bandgap semiconductors such as GaN FET switches are quickly emerging as a key solution thanks to their faster switching, lower energy losses, and superior thermal management. Moreover, GaN power devices will enable the development of 800V direct current buses within racks to significantly reduce distribution losses and the need for large bus bars, while still supporting reuse of 48V components via DC/DC step-down converters.　　Renesas’ GaN based power solutions are especially suited for the task, supporting efficient and dense DC/DC power conversion with operating voltages of 48V to as high as 400V, with the option to stack up to 800V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the new DC/DC converters. 　　“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, Senior Vice President and General Manager of Power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”　　Renesas Power Management Leadership　　A world leader in power management ICs, Renesas ships more than 1.5 billion units per year, with increased shipments serving the computing industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of power management devices, delivering unmatched quality and efficiency with exceptional battery life. As a trusted supplier, Renesas has decades of experience designing power management ICs, backed by a dual-source production model, the industry’s most advanced process technology, and a vast network of more than 250 ecosystem partners.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. 
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Release time：2025-10-13 13:29 reading：631 Continue reading>>
Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles
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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.
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Release time：2025-10-09 13:53 reading：627 Continue reading>>
ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers
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ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
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Release time：2025-09-29 14:53 reading：594 Continue reading>>

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AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

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