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Renesas Debuts Best-in-Class MCUs Optimized for Single-Motor Applications Including Power Tools, Home Appliances and More

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions,introduced the RA2T1 microcontroller (MCU) group based on the Arm® Cortex®-M23 processor optimized for motor control systems in July9. RA2T1 devices are specifically designed for single-motor applications such as fans, power tools, vacuum cleaners, refrigerators, printers, hair dryers and many more.　　Feature Set Optimized for Motor Control　　The new RA2T1 devices include a number of features designed to enhance motor control function, specifically in single-motor systems. One of the notable features is a 3-channel S&H function that simultaneously detects the 3-phase current values of Brushless DC (BLDC) motors. This method provides superior control accuracy as opposed to sequential measurement methods. The RA2T1 MCUs also offer complementary Pulse Width Modulation (PWM) function of the timer, which enables automatic insertion of dead time and generation of an asymmetric PWM. This function is optimized for inverter drive, which facilitates control algorithm implementation.　　The RA2T1 devices offer safety features that are critical in motor control applications. They provide a Port Output Enable function and a high-speed comparator that work together to quickly shut off the PWM output when an overcurrent is detected. The shutdown state can be selected according to the inverter specifications.　　Renesas Leadership in Embedded Processing for Motor Control　　Renesas has shipped motor-control specific MCUs for over 20 years. The company ships over 230 million motor control embedded processors per year to thousands of customers worldwide. In addition to multiple RA MCU groups, Renesas offers motor-control specific devices in its 32-bit RX Family, its 16-bit RL78 MCUs and its 64-bit RZ MPUs.　　“Customers have trusted Renesas motor control solutions for many years across thousands of systems,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA2T1 MCUs enhance our leadership in this area with market-leading technology, low-power operation, and legendary Renesas quality and safety standards for single-motor systems.”　　Key Features of the RA2T1 Group MCUs　　Core: 64 MHz Arm Cortex-M23　　Memory: 64KB Flash, 8KB SRAM, 2KB Data Flash　　Analog Peripherals: 12-bit ADC with 3-channel Sample and Hold, temperature sensor, internal reference voltage, 2-channel high-speed comparators　　System: High-, mid- and low-speed On-chip Oscillators; clock output; power-on reset; voltage detection; data transfer, event link and interrupt controllers; low-power modes　　Safety: PWM forced shutdown, SRAM parity error check, ADC self-diagnosis, clock frequency accuracy measurement, illegal memory access detection　　Operating Temperature Range: Ta = -40°C to 125°C　　Operating Voltage: 1.6V to 5.5V　　Packages: 48LQFP, 32-LQFP, 48-QFN, 32-QFN, 24-QFN (4mm x 4mm)　　The new RA2T1 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of motor control designs to other RA Series devices.　　Winning Combinations　　Renesas has combined the new RA2T1 Group MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including Portable Power Tools, Smart BLDC Ceiling Fan, Cordless Vacuum Cleaner, Cordless Leaf Blower. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RA2T1 Group MCUs are available now, along with the FSP software. The new MCUs are supported in Renesas’ Flexible Motor Control development kit that enables easy evaluation of motor control using permanent magnet synchronous motors (brushless DC motors), and the Renesas Motor Workbench development tool. This development kit offers a common design platform with numerous Renesas motor control MCUs from the RA and RX families, enabling migration of IP across numerous devices. Information on all these offerings is available at renesas.com/RA2T1. Samples and kits can be ordered either on the Renesas website or through distributors.　　Renesas MCU Leadership　　A world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry’s most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit renesas.com/MCUs.

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Renesas

Release time：2025-07-14 14:38 reading：230 Continue reading>>

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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.

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NOVOSENSE

Release time：2025-07-14 14:25 reading：212 Continue reading>>

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Fibocom-Powered Robotic Mower Solution Featured at SPOGA+GAFA 2025, Pioneering the Future of Boundary-Free Smart Lawn Care

　　Cologne, Germany – June 24, Fibocom, a global leader incommunication modules and AI solutions, had its state-of-the-art intelligentrobotic lawn mower solution prominently showcased at SPOGA+GAFA 2025, theworld’s leading trade fair for the garden and outdoor living industry. Multiplerobotic lawn mowers powered by Fibocom’s technology demonstrated seamlessnavigation across simulated garden environments—autonomously detectingboundaries, planning precise mowing routes, and avoiding obstacles—all withoutrelying on traditional physical perimeter wires. This impressive demonstrationhighlighted the disruptive potential of AI-driven, boundary-free lawn caresolutions.　　The global smartrobotic mower market holds vast potential, with Europe and North Americaaccounting for 72% of the world’s 250 million private gardens. Yet, adoptionremains low—under 6% in North America and 10–30% in Europe—highlightingsubstantial room for growth as demand for intelligent lawn care accelerates.　　Fibocom’ssolution integrates advanced AI vision, multi-sensor fusion, and intelligentnavigation to eliminate the need for traditional boundary wires. This enablesrobotic mowers to autonomously detect perimeters and obstacles, ensuring safe,efficient, and precise operation while significantly improving mowing productivity.It’s worth mentioning that, having accumulated over 350,000 kilometers ofreliable autonomous performance worldwide, this solution has proven itsrobustness in diverse and complex garden environments.　　Fibocom provides two solution variantstailored to diverse customer needs: a standard pure-vision model and a flagshipversion combining binocular VIO (Visual-Inertial Odometry) with RTK (Real-TimeKinematic) for superior stability, precision, and large-area coverage—ideal forprofessional and commercial applications. This comprehensive suite, encompassingstereo cameras, AI processing boards, motor control units, and customizablemobile applications, enables OEM partners to accelerate product developmentcycles and focus resources on product differentiation and go-to-marketstrategies. For end users, it revolutionizes lawn care with smart mapping,autonomous operation, and auto-recharging for a safer, easier experience.　　Strategic partnerships with top global brandsare fast-tracking the launch of Fibocom-powered products in key internationalmarkets over the next six months, underscoring Fibocom’s technologicalleadership and growing influence in the smart lawn care industry. Leveragingcutting-edge innovation and manufacturing excellence, Fibocom empowers partnersto penetrate top-tier European retail channels and scale globally, where everyimpeccably maintained lawn showcases the strength of Chinese smartmanufacturing on the world stage.

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Fibocom

Release time：2025-07-11 11:28 reading：198 Continue reading>>

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GigaDevice GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.

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GigaDevice

Release time：2025-07-10 14:22 reading：328 Continue reading>>

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Murata Unveils First High-Frequency XBAR Filter for Next-Gen Networks

　　Murata Manufacturing Co., Ltd. has announced the mass production and commercial shipment of the world’s first*1 high-frequency filter using XBAR technology*2. Developed by combining Murata’s proprietary Surface Acoustic Wave (SAW) filter expertise with XBAR technology from Murata's subsidiary Resonant Inc., it enables the extraction of desired signals while achieving both low insertion loss and high attenuation. These features are critical for the latest wireless technologies, including 5G, Wi-Fi 6E, Wi-Fi 7, and emerging 6G technologies.　　The demand for reliable high-frequency communications continues to grow in response to the widespread deployment of 5G and the future development of 6G. Simultaneously, wireless local-area network (WLAN) standards such as Wi-Fi 6E and Wi-Fi 7 are expanding into higher frequency domains to accommodate ultra-fast data rates. Filters used in these applications must address key challenges, such as preventing out-of-band interference, maximizing system battery performance, and meeting strict space limitations. Traditional approaches using Low Temperature Co-Fired Ceramic (LTCC) or conventional Bulk Acoustic Wave (BAW) filters often fall short in these performance areas.　　Murata’s new XBAR-based filter addresses these limitations by achieving high attenuation performance while maintaining a wide bandwidth and low signal loss. The XBAR structure itself excites bulk acoustic waves using comb-shaped electrodes and a piezoelectric single-crystal thin film, enabling performance beyond the reach of conventional filter structures. It effectively removes high-frequency interference, even in bands above 3 GHz, allowing for clearer signal detection and better performance, contributing to high-speed, high-capacity, and high-quality wireless communication.　　Key performance parameters include a passband of 5150–7125 MHz, a typical insertion loss of 2.2 dB, and a typical return loss of 17 dB. Typical attenuation figures are 11 dB at 4800–5000 MHz, 28 dB at 3300–4800 MHz, 27 dB at 7737–8237 MHz, and 26 dB at 10300–14250 MHz.　　The new filter is targeted at devices with embedded wireless functionality, including smartphones, wearables, notebook PCs, and communication gateways, offering an optimal balance of performance and cost efficiency. Murata will continue to drive innovation in filter technologies to support the evolution of wireless communications, and expects this architecture to scale further, with future product generations capable of operating effectively in ultra-high frequency bands above 10GHz.　　Notes　　*1According to Murata research as of July 7, 2025.　　*2XBAR technology: Murata’s proprietary filter structure that excites bulk acoustic waves using comb-shaped electrodes and piezoelectric single-crystal thin films.

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Murata

Release time：2025-07-10 14:15 reading：265 Continue reading>>

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Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size

　　Murata Manufacturing Co., Ltd. has begun the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm) multilayer ceramic capacitors (MLCC) with a capacitance of 47µF*. The new product line, available in two variants with different temperature characteristics, is designed to advance MLCC miniaturization and enhance customer system performance.　　In recent years, high-performance IT solutions, such as those used in AI servers and data centers, have seen rapid growth. Due to the often high component density demanded by these devices, optimized component placement within limited PCB areas is paramount. As a result, there is increasing demand for capacitors that offer both miniaturization and higher capacitance, along with high reliability under high-temperature conditions caused by heat generated from PCBs and integrated circuits (ICs).　　In response to these requirements, Murata has utilized its proprietary technologies in ceramic dielectric layers and internal electrode miniaturization to facilitate the world’s first mass production of this innovative 47µF product in the compact 0402-inch size. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60%. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22µF product in the same 0402-inch size.　　The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85°C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105°C. The ability to operate in environments up to 105°C, makes the X6S variant well-suited for placement near ICs, thereby contributing to improved device performance and integration. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.　　Murata is committed to advancing miniaturized capacitors with higher capacitance and improved high-temperature reliability to meet evolving market demands. These innovations not only support the ongoing miniaturization and functional enhancement of electronic devices but also contribute to lower material usage and increased production efficiency per unit, ultimately helping reduce power consumption at Murata’s factories and lessen environmental impact.　　For inquiries regarding this product, please contact us.　　Notes　　*Based on Murata research as of July 9, 2025.

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Murata

Release time：2025-07-10 14:13 reading：266 Continue reading>>

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ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

　　ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.　　Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.　　The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.　　As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.　　The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages　　Related Information　　• White Papers　　• Design Model Support Page　　• SiC MOSFET Technical Documentation　　Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.

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ROHM

Release time：2025-07-10 13:36 reading：273 Continue reading>>

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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.

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ROHM

Release time：2025-07-08 17:04 reading：283 Continue reading>>

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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

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Renesas

Release time：2025-07-04 15:04 reading：319 Continue reading>>

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Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.　　Designed for Edge/Endpoint AI　　The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.　　Advanced Technology　　The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.　　“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”　　“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”　　“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”　　Robust, Optimized Peripheral Set for AI　　Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.　　The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.　　New RUHMI Framework　　Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.　　Advanced Security Features　　The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.　　Ready to Use Solutions　　Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.　　Key Features of the RA8P1 MCUs　　Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)　　Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core　　Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface　　Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers　　Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management　　Packages: 224BGA, 289BGA

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Release time：2025-07-04 14:56 reading：309 Continue reading>>

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