Renesas Introduces Industry’s First Complete <span style='color:red'>Memory</span> Interface Chipset Solutions for Second-Generation DDR5 Server MRDIMMs
  Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced that it has delivered the industry’s first complete memory interface chipset solutions for the second-generation DDR5 Multi-Capacity Rank Dual In-Line Memory Modules (MRDIMMs).  The new DDR5 MRDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance Compute (HPC) and other data center applications. They deliver operating speeds up to 12,800 Mega Transfers Per Second (MT/s), a 1.35x improvement in memory bandwidth over first-generation solutions. Renesas has been instrumental in the design, development and deployment of the new MRDIMMs, collaborating with industry leaders including CPU and memory providers, along with end customers.  Renesas has designed and executed three new critical components: the RRG50120 second-generation Multiplexed Registered Clock Driver (MRCD), the RRG51020 second-generation Multiplexed Data Buffer (MDB), and the RRG53220 second-generation Power Management Integrated Circuit (PMIC). Renesas also offers temperature sensor (TS), and serial presence detect (SPD) hub solutions in mass production, making it the only memory interface company that offers the complete chipset solutions for industry standard next-generation MRDIMMs as well as all other server and client DIMMs.  “The demand for higher performance systems driven by AI and HPC applications is relentless,” said Davin Lee, Senior Vice President and General Manager of Analog & Connectivity and Embedded Processing. “Renesas is at the forefront of this trend, working with industry leaders to develop next-generation technology and specifications. These companies depend on Renesas to deliver the technical know-how and the production capabilities they require to meet unprecedented demand. Our latest chipset solutions for second-generation DDR5 MRDIMMs showcase our leadership in this market.”  Renesas’ RRG50120 second-generation MRCD is used on the MRDIMMs to buffer the Command/Address (CA) bus, chip selects and the clocks between the host controller and DRAMs. It consumes 45% less power compared to the first-generation device, a critical specification for heat management in very high-speed systems. The RRG51020 Gen2 MDB is the other key device used in the MRDIMMs to buffer data from the host CPU to DRAMs. Both the new Renesas MRCD and MDB support speeds up to 12.8 Gigabytes per Second (GB/s). Additionally, Renesas’ RRG53220 next-generation PMIC offers best-in-class electrical-over-stress protection and superior power efficiency and is optimized for high-current and low-voltage operation.  Availability  Renesas is sampling the RRG50120 MRCD, the RRG51020 MDB, and the RRG53220 PMIC now, and expects the new products to be available for production in the first half of 2025. More information on these new products is available at www.renesas.com/DDR5.  About Renesas Electronics Corporation  Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.  (Remarks) Intel, the Intel logo, and other Intel marks are trademarks of Intel Corporation or its subsidiaries. All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.  The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.
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Release time:2024-12-03 14:43 reading:766 Continue reading>>
Memory Solutions Provider" Award" alt="BIWIN Wins India's "The Most Extensive Range Memory Solutions Provider" Award">
  June 28th had witnessed the successful hosting of the 16th NCN-ICT India Partner Summit 2024 at New Delhi, India. In the midst of the celebrations, BIWIN was honored with the esteemed “The Most Extensive Range Memory Solutions Provider of 2023 Award”, a reflection of its unwavering dedication to excellence and innovation.  BIWIN is the Winner of “The Most Extensive Range Memory Solutions Provider of 2023”  As an annual event that celebrates the achievements and contributions of key players in the ICT industry, the NCN-ICT Summit Awards brought together industry leaders, corporate executives, distributors, and resellers from India and abroad. It serves as a platform for industry professionals to gain insights into the latest innovations, share best practices, and explore new business opportunities.  Through a combination of online voting and evaluations conducted by a panel of experts and judges, this accolade is a testament to BIWIN’s commitment to delivering a comprehensive range of high-performance memory solutions and pushing forward with innovation and product expansion.  Recognized as a leader in the storage industry, BIWIN offers a comprehensive range of embedded flash-based storage solutions, including mobile phones, education devices, tablets, gaming machines, smart wearables, UAVs, action cameras, in-vehicle systems, DVR/NVRs, servers, OTT boxes, routers, and more. By providing tailored storage solutions, BIWIN supports innovation and advancement in these diverse technology areas.  Attending on behalf of BIWIN, Rajesh Khurana, Country Manager for Consumer Business, was honored to participate in the NCN-ICT Summit & Awards Night 2024 and accept the awards. He expressed heartfelt gratitude for the industry recognition and committed to integrating purpose-driven initiatives into BIWIN’s future work. Khurana emphasized that these efforts will not only honor the awards but also elevate BIWIN to new industry heights.  Rajesh Khurana was also privileged to be part of a renowned panel at the 16th Annual NCN-ICT Partners Summit, which was joined by top industry leaders from Geonix, Savex, Synersoft, Kaspersky and Micron. The discussion focused on the next big thing in ICT technology and examined the need for new business approaches, emerging ICT technologies, and changing business dynamics, as well as their impact on the vendor-partner ecosystem.  As noted by Rajesh Khurana, industry projections indicate that the memory market is expected to experience continued growth in the coming years, especially with the advancement of AI technologies, big data and Internet of Things which set to drive the demand to new levels. BIWIN will also endeavor to provide improved memory solutions for customers while contributing to the industry’s future development.
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Release time:2024-08-20 13:46 reading:870 Continue reading>>
What is a memory chip?  What are the types of memory chips?
  Memory chips are the main components used for storage In the realm of computing and digital devices, and play a very important role in the entire integrated circuit market.  These chips serve as the foundation upon which our digital world operates, facilitating the storage and retrieval of information in devices ranging from smartphones and laptops to complex servers and embedded systems.  What is a memory chip?A memory chip, fundamentally an integrated circuit (IC), is a crucial electronic component designed to store, retrieve, and manage data within a digital device. These chips come in various types and configurations, each tailored to serve specific purposes within electronic systems.  What are the types of memory chips?RAM (Random Access Memory): One of the most common types of memory chips, RAM is volatile memory used by computers to temporarily store data that the CPU needs quick access to during operation. It enables swift read and write operations, facilitating multitasking and overall system performance.  ROM (Read-Only Memory): Unlike RAM, ROM is non-volatile memory, meaning it retains data even when the power is turned off. ROM is commonly used to store firmware and permanent instructions essential for booting up devices and initializing hardware components.  Flash Memory: This non-volatile memory type finds its application in devices like USB drives, Solid State Drives (SSDs), memory cards, and embedded systems. Flash memory allows for both reading and writing operations, making it suitable for storing files, applications, and operating systems.  EEPROM (Electrically Erasable Programmable Read-Only Memory): EEPROM combines the qualities of both volatile and non-volatile memory. It’s rewritable and often used in smaller capacities to store configuration settings and small amounts of essential data.  What are the applications of memory chips?The ubiquity of memory chips spans across an extensive array of applications and devices, playing a pivotal role in their functionality:  • Computers and Laptops: RAM enables quick access to data during computations, while ROM stores firmware and BIOS instructions essential for system startup.  • Smartphones and Tablets: Memory chips in these devices handle data storage for applications, media files, and the operating system, ensuring smooth multitasking and user experience.  • Digital Cameras and Camcorders: These devices utilize memory chips to store photos, videos, and settings, allowing users to capture and retain precious moments.  • Embedded Systems and IoT Devices: Memory chips facilitate the functioning of embedded systems and IoT devices, managing data crucial for their operations in various industries like healthcare, automotive, and home automation.  How to make a computer chip?The creation of a memory chip involves intricate processes conducted in specialized semiconductor fabrication plants. The process can be summarized in several key steps:  Design and Layout: Engineers meticulously design the chip’s layout, determining the arrangement and connections of transistors and circuits.  Lithography: A crucial step where the chip’s design is imprinted onto a silicon wafer using photolithography techniques.  Etching and Doping: Unwanted portions of the silicon wafer are removed, and specific regions are doped with materials to alter their conductivity and create the desired electronic components.  Layering: Multiple layers of conductive and insulating materials are deposited onto the wafer to form intricate circuitry.  Testing and Packaging: The fabricated chips undergo rigorous testing to ensure functionality and quality. Once validated, they are packaged into final products for integration into various devices.  What is the difference between a logic chip and memory chip?While both logic and memory chips are essential components of electronic systems, they serve distinct functions:  Logic Chip:  A logic chip is designed to perform computational tasks, execute instructions, and manage the flow of data within a digital device. These chips contain integrated circuits that implement logical operations, arithmetic calculations, and control functions. They are the brains of a system, carrying out operations based on instructions received from software or firmware.  Examples of logic chips include Central Processing Units (CPUs), Graphics Processing Units (GPUs), microcontrollers, and Application-Specific Integrated Circuits (ASICs). CPUs, for instance, process data, perform calculations, and execute instructions, while GPUs specialize in handling graphics-related tasks.  Memory Chip:  In contrast, a memory chip is specifically dedicated to storing and retrieving data. These chips don’t perform computational or logical operations but instead focus on holding information temporarily or permanently within a system. Memory chips are responsible for enabling the storage and retrieval of data for various purposes, such as program execution, data manipulation, or long-term storage.  Types of memory chips include Random Access Memory (RAM), Read-Only Memory (ROM), Flash Memory, and Electrically Erasable Programmable Read-Only Memory (EEPROM). RAM, for example, stores data temporarily while the system is running, allowing quick access for the CPU to carry out operations. ROM holds essential instructions and data that remain intact even when the power is turned off. Flash memory is used for non-volatile storage in devices like USB drives and SSDs, while EEPROM allows for rewritable non-volatile storage in smaller capacities.  How long does a memory chip last?  The longevity of memory chips varies based on usage, quality, and environmental factors. Under normal operating conditions, these chips can last for many years, potentially even decades. However, excessive usage, high temperatures, or voltage fluctuations may impact their lifespan.
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Release time:2023-11-20 14:33 reading:1533 Continue reading>>
Samsung cuts NAND flash memory production
BIWIN Brings UFS 3.1 Flash <span style='color:red'>Memory</span> Hitting Read Speeds up to 2100 MB/s for Flagship Smartphones
  Smartphones have become an essential part of our everyday lives. As 5G, innovative sensors, and AI are gathering momentum, the storage market puts higher requirements on smartphones in terms of high-resolution videos and images, apps, and real-time communications. BIWIN brings proven storage solutions for your smartphones, enabling improved responsiveness and smooth user experience.  Mobile user experience is based on three main factors: SoC, RAM, and flash memory, with memory performance and capacity having a growing impact on user experience.  To meet the needs of flagship smartphones, BIWIN UFS 3.1 offers write speeds up to 1800 MB/s (4x faster than the previous generation of Universal Flash Storage) and read speeds up to 2100 MB/s. With a capacity up to 256 GB (the 512 GB and 1 TB versions are coming soon), BIWIN UFS 3.1 comes in a dimension of 11.5 x 13.0 x 1.0 mm. In addition, BIWIN UFS 2.2 is compatible with mainstream SoC platforms including MediaTek and Spreadtrum. And BIWIN is the first storage solution provider in China to pass MediaTek certification. BIWIN provides UFS 3.1 + LPDDR4X/5 storage solutions, with the LPDDR5 running at speeds up to 6400 Mbps and boasting a capacity up to 64 Gb.  Firmware algorithm is the very core of the memory’s high performance and low power consumption. Bolstered by JEDEC standards, BIWIN UFS 3.1 supports Write Booster, Deep Sleep, Performance Throttling Notification, and Host Performance Booster to ensure faster speed and less power consumption. BIWIN UFS 3.1 is engineered to offer better user experience in HD video decoding, program installation and startup, continuous shooting, image loading, large file copy, game loading and more.  BIWIN storage products have entered the supply chain system of mainstream smart terminal manufacturers. In the future, we will continue to deepen the integration of R&D, packaging and testing, giving full play to our advantages in embedded storage in order to help customers increase the competitiveness of their terminal products.
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Release time:2023-09-01 13:11 reading:3789 Continue reading>>
Samsung is developing next-generation memory chips for large-scale AI applications such as ChatGPT
  The large-scale application of ChatGPT and other AI chatbots will not only improve the application experience of introducing related technologies, but also bring new development opportunities to several fields, memory chip is one of them. Ameya360 reports that Samsung Electronics is exploring business opportunities by developing customized next-generation memory chips for large AI applications, such as ChatGPT, which is gaining popularity around the world.  The actual impact of ChatGPT on the chip circuit is mainly shown as follows: ChatGPT is based on Transformer technology. With the continuous iteration of the model and the increasing number of layers, the demand for computing power is increasing. Secondly, the three conditions for the operation of ChatGPT, namely, training data + model algorithm + computing power, require large-scale pre-training on the basic model. After three iterations of ChatGPT, the number of references increased from 117 million to 175 billion, and the amount of training increased significantly.  The New Computing business team of Samsung's memory business division is developing a customized next-generation memory for large-scale AI related to ChatGPT. The new computing business team, headed by Kim Jin-hyeon, is known to be a pioneer In the development of a business within the storage business division. Previously, the team focused on the development of Processing In Memory; PIM). Pims can not only store data, but also integrate and calculate data in memory, which can improve the efficiency of data processing and power consumption. Therefore, PIMs are suitable for AI.  In addition, some semiconductor industry insiders pointed out that although traditional AI chips occupy the mainstream at present and AI-dedicated chips are booming, they have met their physical limits, and the future of AI chips may be quantum chips.  Park Seong-soo, a senior researcher at the Quantum Technology Research Center at the Electronics and Communications Research Institute, said ChatGPT can also be used with a lot of computing resources, but if combined with future quantum computers, it will become a more intelligent artificial intelligence.  According to Gartner's report, total global semiconductor revenue in 2022 was approximately $601.7 billion, an increase of 1.1% year-on-year. Samsung's market share was 10.9 per cent. The ChatGPT scandal has created a new opportunity for Samsung to develop memory chips.
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Release time:2023-02-21 11:26 reading:4013 Continue reading>>
Ameya360:Genesys Logic <span style='color:red'>Memory</span> Card Reader Controller Supports SD 4.0 UHS-II Speed Mode
  Genesys Logic Inc.’s GL9767 PCI Express to SD Express memory card reader controller supports 1-Lane 2.5/5.0/8.0 GTps PCI Express bus connect to the PCI Express host.  The support for SD Express interface can be up to SD 8.0 SD Express (PCIe Gen.3 x 2) by a specific system design and a bandwidth of 1,970MBps. GL9767 also supports SD 7.1 SD Express (PCIe Gen. 3 x 1), with a bandwidth of 985MBps. GL9767 can work with the new SDUC card featuring capacities of up to 128TB.  The GL9767 memory card reader controller is suitable for internal SD Express card reader applications in laptops, mini PCs, server systems, professional cameras, game consoles, and drone devices that demand the high speed of the SD storage or the second SSD-like storage for the real memory expansion.  GL9767 is the first SD Express card reader controller that can backward support SD 4.0 UHS-II speed mode. The existing devices support UHS-II card slot use GL9767 in the next generation product not only upgrade the speed of SD storage also retain the fully support of UHS-II card. GL9767 also support SanDisk high-performance UHS-I card up to 200MB/s of reading speed.  For power saving, GL9767 supports PCI Express ASPM, L1 sub-states (L1.1 and L1.2) and RTD3 (Runtime D3 Hot/pold), Modern Standby and S0ix.  GL9767 will be entering mass production in the second quarter of 2023. The design kit and the IC sample are available now.  Genesys Logic showcased its USB4, USB 3.2 Gen2/Gen1 family of products, USB Type-C solution and PCI Express products at the recent Consumer Electronics Show (CES) 2023 in Las Vegas, Nevada.
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Release time:2023-01-18 11:21 reading:3381 Continue reading>>
Rambus acquires memory technology assets of Diablo Technologies
  Rambus Inc. today announced it has acquired the assets of Diablo Technologies to broaden its portfolio in the hybrid DRAM and Flash memory markets. These patented innovations augment the existing Rambus NVDIMM portfolio and complement its high-bandwidth, low-power memory technologies. Specific terms of the deal are not disclosed.  For over ten years, Diablo Technologies was a pioneer in the development of NVDIMM technologies for high-speed, low-power, and low-latency bridging and switching products targeted at the server and storage markets. Having developed memory buffer and software solutions leveraging an all-Flash memory sub-system, Diablo Technologies enabled an architecture to rewrite the rules of data center performance and economics. Rambus’ investment in these technology areas provide a foundation for integrating existing DRAM and Flash along with emerging memories into advanced hybrid memory systems in the future.  Expanding emerging memory technology for high memory bandwidth interfaces is key to Rambus’ strategic core business. The company has also been collaborating with IBM to research hybrid memory systems, as announced previously.  “Adding these breakthrough innovations from Diablo Technologies will continue to grow Rambus’ leadership in non-volatile and hybrid DRAM and Flash memory technologies with foundational patents,” said Kit Rodgers, SVP of Technology Partnerships and Corporate Development, Rambus. “Diablo Technology’s patented innovations were ahead of their time and nicely complement our offerings for existing and new customers.”
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Release time:2019-01-18 00:00 reading:1066 Continue reading>>
Macronix and IBM Continue to Collaborate on Phase Change <span style='color:red'>Memory</span> Technology
 The Macronix International Co., Ltd. Board of Directors yesterday passed a resolution to sign a contract with IBM to continue to carry out joint development of “Phase Change Memory (PCM).”The two parties will share research and development expenditures, and the contractual period is from January 22 of next year to January 21, 2022, for a period of three years.The objective of this bilateral collaboration is to continue the research and development of “Storage Class Memory” technology.Storage Class Memory was advanced by IBM in 2008, and it is a new memory between DRAM and NAND Flash which can go an extra step in improving the processing power of computers.In 2014 at the International Electron Devices Meeting, IBM proposed the potential of PCM as a storage memory device.The following year in 2015 at the Symposia on VLSI Technologyand Circuits Macronix and IBM jointly presented a phase change memory sample using a 90 nm process capacity of 512Mb.Macronix pointed our that decreasing costs is the biggest challenge in the development of PCM; however, multi-valued operations can be utilized to effectively reduce expenditures. Furthermore, multi-valued operations can also dramatically increase the capacity of memory, even though the performance of memory components will also be derogated. Nevertheless, samples made using contemporary manufacturing technologies already show excellent performance, and there is a good chance that PCM will be able to be used for storage level memory applications.
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Release time:2018-12-27 00:00 reading:1153 Continue reading>>
Slowing <span style='color:red'>Memory</span> Market Cools Chip Growth
Semiconductor sales growth has slowed substantially in recent months as the rapid price increases that fueled the market's growth for more than two years has slowed to a trickle.The three-month rolling average for chip sales growth slowed to 13.8% in January, the lowest level since November 2016, according to the World Semiconductor Trade Statistics organization. Sales for the quarter were up 13.8% year-over-year, the lowest rate of growth since the fourth quarter of 2016. In fact, it marked the first time since the first quarter of 2017 that the growth rate slipped below 20%.The slowing sales growth has corresponded directly with a decline in the growth rate of DRAM and NAND flash memory prices, which have slowed dramatically in recent months as the memory industry shifts from a prolonged period of supply shortage to oversupply."The softening memory market has started to become a 'headwind' on total IC market growth," said market research firm IC Insights in a recent report. The firm is forecasting that overall chip sales growth will fall to 6% in the fourth quarter.IC Insights — which forecasts that the semiconductor industry has entered a "cooling period" after a prolonged period of expansion — noted that the memory chip market grew by only 8% in the third quarter compared to the second quarter. By contrast, the firm said, the memory chip market grew by 18% from the second quarter to the third quarter last year.Overall, DRAM sales increased by 9% in the third quarter to again set a new record at $28 billion, according to market research firm TrendForce's DRAMeXchange unit. But the firm said that pricing for mainstream DRAM applications such as PC, server and mobile increased by less than 2% in the quarter. Contract pricing for DDR3 consumer DRAM was the first to drop during the quarter because of weakening demand, while contract pricing for graphics DRAM actually decreased by 3% compared to the second quarter because of the sharp demand for cryptocurrency mining, TrendForce said.Also concerning is that TrendForce said that DRAM revenue growth in the third quarter was primarily due to increasing bit shipments, rather than rising prices. "Prices practically flattened out in 3Q18 as the market supply has been steadily expanding in the second half of the year," the firm said in a press statement.TrendForce predicts that DRAM prices, which started to fall in October, will continue to slide through the end of the fourth quarter, officially ending the DRAM boom that lasted for more than two years. Future price declines will be steep because the market has clearly entered an oversupply situation and inventories remain high, the firm said.   Meanwhile, TrendForce also reported recently that NAND flash revenue grew by just 4.4% in the third quarter compared with the second quarter, with the average selling price of devices falling by 10-15% on a contract basis. The firm maintains that the NAND market has been in oversupply since the start of this year.“The market for NAND Flash is expected to remain in oversupply during 4Q18, with steeper price decline for various NAND flash products,” said Ben Yeh, a DRAMeXchange analyst, in a statement.
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Release time:2018-11-28 00:00 reading:1140 Continue reading>>

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