Renesas Develops SoC Technologies for Automotive Multi-Domain ECUs Essential for the <span style='color:red'>SD</span>V Era
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Renesas Develops SoC Technologies for Automotive Multi-Domain ECUs Essential for the SDV Era

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has developed three System-on-Chip (SoC) technologies for automotive multi-domain electronic control units (ECUs). They feature advanced AI processing capabilities and chiplet functions, serving as the core technology platform for next-generation automotive electrical/electronic (E/E) architectures. Renesas presented the results at the International Solid-State Circuits Conference 2026 (ISSCC 2026), held February 15–19 in San Francisco, USA.　　In the age of software-defined vehicles (SDVs), automotive SoCs require advanced performance to run multiple applications simultaneously and must offer scalability through chiplets. They must also meet the functional safety requirements of automotive SoCs. As multi-domain SoCs powering central computing are growing larger and more complex, maintaining automotive-grade quality is becoming more difficult. With increased performance in advanced SoCs, power consumption also rises, making improvements in power efficiency and safety vital. To meet these needs, Renesas has developed the following new technologies.　　1. Chiplet architecture that supports functional safety　　To meet the functional safety requirements of automotive SoCs, Renesas has developed a new, proprietary architecture that supports ASIL D even in a chiplet configuration. By combining the standard die-to-die UCIe interface with a proprietary RegionID mechanism, the architecture prevents interference with hardware resources, even when numerous applications run simultaneously, thereby achieving Freedom from Interference (FFI).　　Conventional UCIe interfaces lack functionality to transmit RegionIDs between dies. Renesas developed a method for mapping RegionIDs into physical address space, encoding them into the UCIe region, and transmitting them. This enables safe access control through the memory management unit (MMU) and real-time cores, and meets functional safety requirements across chiplets. Additionally, by maintaining bandwidth from processors to the memory bus, the UCIe interface was confirmed through testing to achieve a high transmission speed of 51.2 GB/s, approaching the upper limit of intra-SoC transfer speeds. This technology provides both scalability and safety for high-performance automotive SoCs.　　2. Advanced AI processing capabilities and automotive-grade quality　　Automotive-grade quality is vital for SDV systems. Renesas has created a 3 nm SoC design that improves the performance of neural processing units (NPUs) for AI processing, while maintaining automotive-grade quality. In recent years, NPUs have been growing larger, with their area expanding 1.5-fold compared to previous generations. This has led to increased clock latency between shared clock sources and individual circuits. To address this problem, Renesas has redesigned the clock architecture by splitting up clock pulse generators (CPGs), which in past designs were module-level units, and placing mini-CPGs (mCPGs) at the sub-module level. This greatly reduces clock latency and meets timing requirements.　　However, multi-layer mCPGs complicate test clock synchronization, which is critical for achieving zero defects in automotive applications. Renesas has integrated test circuits into the hierarchical CPG architecture and unified the signal path for user clocks and test clocks. The new design also synchronizes upper- and lower-level mCPGs under a single clock source in test mode. This makes unified phase adjustment possible. As a result, Renesas has been able to achieve quality aligned with zero-defect expectations, even for large-scale SoCs, providing the high reliability required for next-generation SDV automotive SoCs.　　3. Advanced power control and monitoring for improved power efficiency and safety　　To achieve the high level of performance required for automotive SoCs with improved power efficiency and safety, Renesas has developed advanced power gating technology that uses over 90 power domains. It enables precise power control, from several milliwatts to several tens of watts, depending on operating conditions. Furthermore, Renesas has split power switches (PSWs) into ring PSWs and row PSWs to reduce IR drops (voltage drops) associated with increasing current density from smaller process geometries. When power is turned on, the ring PSW suppresses rush currents. Then the row PSW equalizes impedance within the domain. Together, these reduce IR drops by roughly 13% compared with conventional designs.　　To meet ASIL D functional safety standards, the dual core lock step (DCLS) configuration controls the master and checker cores with independent power switches and controllers. With this design, even if one side fails, the failure can be detected through lockstep operation. Furthermore, loopback monitoring is performed for each PSW's gate signal, so OFF states are detected when a failure occurs. A digital voltage meter (DVMON), which is highly resistant to temperature drift, is used for voltage monitoring. This improves aging tolerance by 1.4 mV. These technologies enable high-performance automotive SoCs that offer both power efficiency and safety.　　These new technologies are being used in Renesas' R-Car X5H SoC for automotive multi-domain ECUs. With R-Car X5H, users can accelerate the evolution of SDVs while ensuring safety and enabling autonomous driving, digital cockpit and more.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.
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Release time：2026-02-28 15:45 reading：272 Continue reading>>
BIWIN Built-in BGA S<span style='color:red'>SD</span> Plus Mini S<span style='color:red'>SD</span> Make Robots Smarter, Easier to Use, and Longer-Lasting
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BIWIN Built-in BGA SSD Plus Mini SSD Make Robots Smarter, Easier to Use, and Longer-Lasting

　　With the maturation of on-device AI computing, multimodal perception fusion, and reinforcement learning frameworks, robots are evolving from being merely reactive to becoming truly adaptive, with requirements of accumulating experience to achieve autonomous evolution, far beyond just executing commands.　　AI models are growing larger.What to do when data loading is too slow and affects decision-making?　　Devices are becoming increasingly compact, with every bit of internal space at a premium. How to balance tiny size with high-performance transmission?　　Training data keeps piling up, but memorycapacity isn’t enough and can’t be upgraded?　　Conventional embedded storage solutions (such as UFS, eMMC, M.2 SSD, MicroSD cards) are limited by trade-offs among performance, form factor, and scalability, making them insufficient for the evolving demands of humanoid robotics handling sustained high-load operation, long lifecycle, high system integration, and incremental learning.　　BIWIN BGA SSD, with its superior performance, compact form factor and excellent shock-resistance, has become one of the preferred solutions for robots; Mini SSD, positioned as an expandable storage choice with superb upgradability and flexibility, strikes a perfect balance between high performance and compact package. The combination of the built-in BGA SSD plus expandable Mini SSD constructs a new integrated storage architecture, working as a complete solution to provide stability, expandability, and systemic efficiency for intelligent robots.　　Built-in BGA SSD + External Mini SSD　　Supporting high-frequency data writes for advanced perception and decision-making　　The “brain” of a humanoid robot—the core computing motherboard—is the hardware hub for advanced perception, cognitive reasoning, and autonomous decision-making. Relying on high-performance AI computing chips, it runs multimodal large models and processes massive sensor data in real time to understand environments and plan tasks. This process demands fast and reliable storage for the operating system.　　BIWIN BGA SSD uses a PCIe 4.0 ×4 interface, delivering sequential read speeds up to 7350 MB/s and capacities up to 2TB, enabling “second-level” boot times for the OS and AI models.　　Robots operate under write-intensive workloads that far exceed typical consumer SSD applications. In some high-load systems, daily write volumes can reach 300 GB. Once the initial onboard storage (such as UFS or fixed SSD) becomes saturated, there’s no room left for ongoing data feeding and model iteration.　　Designed for effortless scalability, BIWIN Mini SSD features a SIM-card-style, slot-in design that enables a true “plug-and-play” experience. No disassembly or specialized tools are required to add up to 2 TB of high-speed storage (with higher capacities planned), ensuring long-term data accumulation, incremental learning, and intelligent evolution for robotic systems.　　While achieving extreme miniaturization and large capacity, BIWIN Mini SSD also delivers high-performance transfer rates. Equipped with a PCIe 4.0 ×2 interface, its read/write speeds reach up to 3700 MB/s and 3400 MB/s respectively, and future seamless upgrades to higher-performance versions (such as PCIe 5.0) are supported.　　SIM-card-sized, as light as 1g　　Saving device space and reducing weight　　As humanoid robots move toward practical deployment, lightweight design is not just about “shedding weight”; it’s more about simplifying mechanical structures, lowering manufacturing costs, improving mobility, and expanding application scenarios. As an essential hardware component, the size and weight of memory module directly impact overall device design.　　Both the BIWIN BGA SSD and Mini SSD feature a coin-sized footprint with an ultra-slim thickness of just 1.4 mm. The Mini SSD weighs as little as 1 g and can be directly inserted into a pre-designed socket, significantly reducing constraints on mechanical layout and overall system weight. For humanoid robots that demand high dynamic performance and extended battery life, BIWIN BGA SSD and Mini SSD deliver a “minimal physical presence” while enabling a “lightweight system design”—resulting in more compact architectures and greater motion agility.　　Dual Storage, Reshaping Industry Cooperation　　Safeguarding the Full Lifecycle Storage Needs of Robots　　Mini SSD, defined as an expandable memory solution, goes far beyond its storage function; its design concepts of modularization and standardization bring a brand-new product architecture mindset to intelligent terminal industries such as robots and notebooks.　　Manufacturer Enablement: Simplified Design, Faster Iteration　　BIWIN delivers a Mini SSD + socket solution based on a modular integration approach, enabling device manufacturers to optimize internal system layouts, reduce form-factor constraints, and develop thinner, lighter end products with clear differentiated competitiveness.　　The host-side socket offers strong compatibility across multiple capacity SKUs, requiring minimal hardware changes. This significantly lowers development effort, integration complexity, and overall system cost for device manufacturers.　　User Value: Plug-and-Play, Maximum Flexibility　　Storage expansion or replacement can be completed on-site without tools or specialized expertise. Designed for repeated, reliable insertion and removal, the solution allows end users to easily expand or swap TB-class storage, delivering a flexible and efficient storage experience.　　When paired with BIWIN’s in-house RD510 card reader (USB4.0 Type-C), users gain high-performance, portable storage for mobile productivity, content creation, and other data-intensive scenarios.　　Mini SSD has already entered mass production and is now integrated into multiple intelligent devices, including the OneXPlayer X1 Air, APEX, Super X, and GPD Win 5. It is also officially available for purchase in the consumer market.　　Since its debut, Mini SSD has been validated by several international honors, consisting of “Best Inventions of 2025” from TIME, “Best-in-Show” from Embedded World 2025, and “2026 CES Picks Awards” in the TWICE category. And BIWIN is also recognized as a winner of 2025 “China Chip” Outstanding Supporting Service Enterprise by right of this new innovation.　　Currently, BIWIN is collaborating with multiple SoC platforms and terminal brands to jointly promote Mini SSD interface specifications and ecosystem standards, accelerating its large-scale adoption in cutting-edge fields such as AI terminals and humanoid robots.
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Release time：2026-02-06 17:47 reading：5506 Continue reading>>
BIWIN Mini S<span style='color:red'>SD</span> Earns Dual Honors: TWICE Picks Award and AVRONA Most Innovative Award
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BIWIN Mini SSD Earns Dual Honors: TWICE Picks Award and AVRONA Most Innovative Award

　　Recently, BIWIN’s innovative product Mini SSD was honored with multiple international awards at CES 2026, earning the TWICE 2026 Picks Awards Winner as well as the AVRONA Most Innovative Award.　　With its breakthrough design philosophy and strong technical capabilities, this “small form factor, superior performance” storage solution not only continues BIWIN’s legacy of technological innovation, but also aligns seamlessly with the accelerating evolution of edge AI.　　Technological Breakthroughs Addressing Core Storage Challenges　　Conventional consumer storage solutions have long struggled to balance performance, portability, and expandability. BIWIN Mini SSD overcomes these limitations through three key innovations:　　AdvancedLGA packaging, compressing the form factor to just 15 × 17 × 1.4 mm (approximately the size of half a coin) and supporting capacities from 512GB to 2TB;　　PCIe 4.0 ×2interface with NVMe 1.4 protocol, delivering read speeds of up to 3700MB/s and write speeds of 3400MB/s, far surpassing traditional storage card solutions and rivaling mainstream consumer-grade M.2 SSDs;　　An industry-first standardized slot-in SSD design, enabling effortless TB-level expansion through a simple “open – insert – lock” three-step process, dramatically simplifying storage upgrades.　　Small in Size, Big in Capability: Empowering Two Key Tracks　　For consumers, BIWIN Mini SSD introduces a new level of convenience as no specialized tools are required for individuals to expand storage capacity, and its flagship-class performance is capable of supporting smooth operation of intelligent devices.　　For device manufacturers, its standardized interface, modular architecture, and scalability significantly streamline BOM management, reduce manufacturing, inventory, and after-sales costs, and support optimization across the entire product lifecycle.　　The product has already entered deep collaborations with well-known brands such as One-Netbook (ONEXPLAYER) and GPD, helping partners build differentiated competitive advantages in the market.　　Global Recognition Validating Technical Excellence　　Leveraging its ultra-compact design, high scalability, and reliable performance, BIWIN Mini SSD is redefining the integrated paradigm between AI terminals and storage technologies. Thanks to its disruptive innovation, the product was selected for TIME’s “Best Inventions of 2025”, becoming the only storage product worldwide to make the list.　　It subsequently won the “Best-in-Show” Award at Embedded World North America 2025, earning strong endorsement from industry authorities for both its technological advancement and commercialization potential. The dual awards at CES 2026 further reinforce the product’s real-world value and promising market outlook.　　Most notably, the latest achievement marks another milestone: BIWIN Mini SSD has been shortlisted as a finalist for the 2026 Edison Awards, often referred to as the “Oscars of Innovation.” This prestigious recognition, honoring the world’s most outstanding innovations, adds another heavyweight accolade to BIWIN Mini SSD’s growing global honors portfolio.
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Release time：2026-02-06 17:44 reading：445 Continue reading>>
Renesas Fast-Tracks <span style='color:red'>SD</span>V Innovation with R-Car Gen 5 SoC-Based End-to-End Multi-Domain Solution Platform
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Renesas Fast-Tracks SDV Innovation with R-Car Gen 5 SoC-Based End-to-End Multi-Domain Solution Platform

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, is expanding its software-defined vehicle (SDV) solution offerings centered around the fifth-generation (Gen 5) R-Car family. The latest device in the Gen 5 family, the R-Car X5H is the industry’s first multi-domain automotive system-on-chip (SoC) manufactured with advanced 3nm process technology. It is capable of simultaneously running vehicle functions across advanced driver assistance systems (ADAS), in-vehicle infotainment (IVI), and gateway systems.　　Renesas has begun sampling Gen 5 silicon and now offers full evaluation boards and the R-Car Open Access (RoX) Whitebox Software Development Kit (SDK) as part of the next phase of development. Renesas is also driving deeper collaboration with customers and partners to accelerate adoption. At CES 2026, Renesas will showcase AI-powered multi-domain demonstrations of the R-Car X5H in action.　　The R-Car X5H leverages one of the most advanced process nodes in the industry to offer the highest level of integration, performance and power efficiency, with up to 35 percent lower power consumption than previous 5nm solutions. As AI becomes integral to next-generation SDVs, the SoC delivers powerful central compute targeting multiple automotive domains, with the flexibility to scale AI performance using chiplet extensions. It delivers up to 400 TOPS of AI performance, with chiplets boosting acceleration by four times or more. It also features 4 TFLOPS equivalent* of GPU power for high-end graphics and over 1,000k DMIPS powered by 32 Arm® Cortex®-A720AE CPU cores and six Cortex-R52 lockstep cores with ASIL D support. Leveraging mixed criticality technology, the SoC executes advanced features in multiple domains without compromising safety.　　As hardware and software become more tightly integrated early in development to support complex E/E architectures, Renesas is adding new capabilities to the RoX development platform. RoX dramatically simplifies development by combining all essential hardware, operating systems, software and tools required to rapidly develop next-generation vehicles with seamless software updates.　　Accelerating Automotive Innovation with an Open, Scalable RoX Whitebox SDK　　To accelerate time-to-market, Renesas now offers the RoX Whitebox Software Development Kit (SDK) for the R-Car X5H, an open platform built on Linux, Android, and XEN hypervisor. Additional support for partner OS and solutions is available, including AUTOSAR, EB corbos Linux, QNX, Red Hat and SafeRTOS. Developers can jumpstart development out of the box using the SDK to build ADAS, L3/L4 autonomy, intelligent cockpit, and gateway systems. An integrated stack of AI and ADAS software enables real-time perception and sensor fusion while generative AI and Large Language Models (LLMs) enable intelligent human-machine interaction for next-generation AI cockpits. The SDK integrates production-grade application software stacks from leading partners such as Candera, DSP Concepts, Nullmax, Smart Eye, STRADVISION and ThunderSoft, supporting end-to-end development of modern automotive software architectures and faster time to market.　　“Since introducing our most advanced R-Car device last year, we have been steadfast in developing market-ready solutions, including delivering silicon samples to customers earlier this year,” Vivek Bhan, Senior Vice President and General Manager of High Performance Computing at Renesas. “In collaboration with OEMs, Tier-1s and partners, we are rapidly rolling out a complete development system that powers the next generation of software-defined vehicles. These intelligent compute platforms deliver a smarter, safer and more connected driving experience and are built to scale with future AI mobility demands.”　　“Integrating Renesas’ R-Car X5 generation series into our high-performance compute portfolio is a natural next step that builds on our existing collaboration,” said Christian Koepp, Senior Vice President Compute Performance at Bosch’s Cross-Domain Computing Solutions Division. “At CES 2026, we look forward to showcasing this powerful solution with Renesas X5H SoC, demonstrating its fusion capabilities across multiple vehicle domains, including video perception for advanced driver assistance systems."　　“Innovative system-on-chip technology, such as Renesas’ R-Car X5H, is paving the way for ZF’s software-defined vehicle strategy,” said Dr. Christian Brenneke, Head of ZF’s Electronics & ADAS division. “Combining Renesas’ R-Car X5H with our ADAS software solutions enables us to offer full-stack ADAS capabilities with high computing power and scalability. The joint platform combines radar localization and HD mapping to provide accurate perception and positioning for reliable ADAS performance. At CES 2026, we’ll showcase our joint ADAS solution.”　　First Fusion Demo on R-Car X5H with Partner Solutions at CES 2026　　Renesas will showcase the capabilities of the R-Car X5H for the first time through a series of invitation-only demos at CES 2026. For more information about how to attend this event, contact sales at: CES26_Info@lm.renesas.com.　　The new multi-domain demo upscales from R-Car Gen 4 to the next-generation R-Car X5H on the RoX platform, integrating ADAS and IVI stacks, RTOS, and edge AI functionality on Linux and Android with XEN hypervisor virtualization. Supporting input from eight high-resolution cameras and up to eight displays with resolutions reaching 8K2K, the platform delivers immersive visualization and robust sensor integration for next-generation SDVs. Combined with the RoX Whitebox SDK and production-grade partner software stacks, the platform is engineered for real-world deployment covering multiple automotive domains.　　Availability　　Renesas is shipping R-Car X5H silicon samples and evaluation boards, along with the RoX Whitebox SDK, to select customers and partners.
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Release time：2025-12-24 16:06 reading：1293 Continue reading>>
High-voltage half-bridge driver N<span style='color:red'>SD</span>2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN
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High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.
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Release time：2025-08-07 14:08 reading：1392 Continue reading>>
BIWIN Spec TDP200 Series Industrial-Grade PCIe S<span style='color:red'>SD</span> Hits the Market
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BIWIN Spec TDP200 Series Industrial-Grade PCIe SSD Hits the Market

　　With profound insights into the strict requirements for stability, reliability, and uninterrupted operations under industrial-based scenarios, BIWIN Spec introduces newly-available TDP200 series industrial-grade M.2 PCIe SSD designed for industrial data transfer demands. Featured with industrial-grade hardware and software design and optimized firmware algorithms, this innovation supports 24/7 high-frequency writes and is especially resistant to strong mechanical impacts and shocks, serving as efficient and reliable storage solutions for data communications, smart healthcare, industrial automation, industrial robots and AIoT.　　Tough and Reliable Industrial-Grade Design　　Engineered with selected industrial hardware and optimized circuit design, the TDP200 series supports stable operations under temperature ranging from -20℃ to +70℃, helping keep data safe and secure. More specialized designs such as high-quality 3D TLC NAND, high performance controller and capacity up to 2TB make the SSD qualified to handle massive, data-intensive workloads.　　Specialized Firmware for Long-Lasting Reliability　　Packed with advanced reliability features like 4K LDPC, SRAM ECC, RAID, and power loss protection, the TDP200 series boasts an impressive 3000 P/E cycles endurance, making it ideal for relentless 24/7 operations without downtime. A high-precision thermal sensor paired with S.M.A.R.T. health monitoring tracks temperature in real time, automatically adjusting performance to ensure consistent reliability under heavy workloads.　　Rigorous Testing for Uncompromising Quality　　The TDP200 series has been verified with robust quality through over 1000 tests of aging, extreme temperatures and reliability. While strictly in line with the international standards, the product is also continuously monitored in all aspects of performance, reliability and quality through ORT, ensuring top-tier excellence throughout its lifecycle. Moreover, the Series is tested seamlessly compatible with global mainstream platforms and operating systems.　　From product design and hardware architecture to component selection, firmware algorithms, and manufacturing, every detail of BIWIN’s industrial-grade SSD is crafted to deliver a stable, reliable, and durable foundation for industrial data.
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Release time：2025-07-29 15:40 reading：1135 Continue reading>>
NOVOSENSE introduces N<span style='color:red'>SD</span>A6934-Q1: Automotive-grade Class D audio amplifier with digital input
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NOVOSENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input

　　NOVOSENSE recently announced the launch of the NSDA6934-Q1, a digital-input automotive-grade Class D audio amplifier designed for vehicle audio systems. Featuring four-channel audio output with up to 75W per channel, it supports low-latency mode and sampling rates up to 192kHz. The amplifier offers flexible switching frequencies, multiple modulation options, and comprehensive protection features, making it highly adaptable to various automotive audio system designs.　　Class D amplifiers: Driving the evolution of automotive audio　　As automotive electronics continue to advance, Class D amplifiers have emerged as the preferred choice for vehicle audio systems due to their high efficiency, low heat dissipation, and compact form factor. These amplifiers not only meet modern vehicles’ stringent energy efficiency demands but also enhance audio quality and power output within limited space, playing a key role in the evolution of automotive audio technology.　　Optimized Low-Latency Mode: Reducing Path Delay by Over 70%　　In automotive audio systems, amplifiers boost signals from the DSP (Digital Signal Processor) before transmitting them to the speakers. Traditional amplifiers can contribute to over 30% of total signal transmission latency, impacting system performance.　　The NSDA6934-Q1 features a unique low-latency mode that reduces transmission path delay by more than 70%, granting the DSP additional time for signal processing. This reduces DSP resource demands and enhances the effectiveness of RNC (Road Noise Cancellation). Additionally, the amplifier supports up to 192kHz sampling rates, delivering high-resolution audio with enhanced clarity and detail for an immersive in-car listening experience.　　Flexible Configurations to Suit Various Designs　　The NSDA6934-Q1 provides a wide range of switching frequencies and modulation options, allowing system engineers to optimize efficiency and size.　　Adjustable Switching Frequency (384kHz – 2.1MHz)　　At 384kHz, the amplifier achieves up to 93% efficiency, ideal for applications prioritizing power savings, though it requires a 10μH inductor for operation.　　At 2.1MHz, the amplifier supports a compact 3.3μH inductor, making it suitable for space-constrained smart cockpit integration.　　Selectable Modulation Modes (BD Mode & 1SPW Mode)　　BD Mode (50% duty cycle) ensures superior linearity at high power levels, making it ideal for high-output applications.　　1SPW Mode (20% duty cycle) reduces conduction losses, improving efficiency in low-power scenarios　　Additionally, the NSDA6934-Q1 supports TDM16 data format, ensuring seamless integration with mainstream audio interfaces. With eight selectable I2C addresses, it prevents communication conflicts among peripheral devices. It also features integrated PVDD voltage monitoring, eliminating the need for external resistor dividers and simplifying system wiring and debugging.　　Enhanced EMC Performance & Comprehensive Protection　　The NSDA6934-Q1 incorporates multiple EMC optimization techniques, including slew rate control, phase control, and three spread-spectrum modes (triangular wave, random spread, hybrid spread), helping customers pass system-level EMC tests efficiently.For system reliability, the amplifier integrates multiple intelligent protection and diagnostic functions, including:　　• I2C watchdog for real-time bus monitoring.　　• Thermal protection, which automatically reduces gain under high-temperature conditions.　　• AC/DC diagnostics for real-time power supply monitoring.　　• Comprehensive protection suite, including temperature alarms, over-temperature shutdown, undervoltage, overvoltage, and overcurrent protection, ensuring robust system stability.
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Release time：2025-04-24 17:19 reading：1611 Continue reading>>
How Will BIWIN BGA S<span style='color:red'>SD</span> Break Through in the Intelligent Upgrade Path of Edge Devices?
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How Will BIWIN BGA SSD Break Through in the Intelligent Upgrade Path of Edge Devices?

　　In the wave of edge intelligence upgrades, as products are continuously evolving toward miniaturization and high integration, the device systems are confronted with dual challenges of physical space compression and surging computing power. Over the past years, BIWIN has invested significant effort in advancing research and development in storage technologies and advanced packaging and testing processes, providing it with competitive advantages in delivering tailored, miniaturized, and highly integrated storage solutions, including a diverse product portfolio, patented proprietary technologies, and a robust manufacturing and supply chain system.　　Notably, the BIWIN-launched EP410 BGA SSD, with its innovative architectural design, exemplifies a breakthrough solution for edge devices upgrades by offering three key capabilities: a compact and lightweight design, outstanding performance, and high reliability. While offering form factors as compact as those of embedded chips to meet the rigorous dimension requirements of portable devices, these SSDs are able to deliver superior performance and flexible capacity options compared to UFS/eMMC standards.　　Ultra-Thin, Compact Design to Maximize System Spatial Efficiency　　The increasing inference frequencies across smartphones and PCs have made the large capacity a fundamental configuration. Meanwhile, in order to deliver optimized user experience and robust operation under complicated environments, the terminal manufacturers are striving to achieve maximized hardware efficiency and capacity utilization within constrained system dimensions.　　Aligned with the trends in product iteration, BGA SSD EP410 is equipped with advanced packaging processes such as 16-layer die stacking and 40μm ultra-thin die, realizing the compact form factor measuring only 16×20×1.4mm—merely 1/14 the volume of conventional M.2 2280 SSDs (80×22×3.5mm). Surprisingly, it’s able to deliver uncompromising capacity up to 2TB, supporting the smooth image recognition and natural language processing in edge devices and free of capacity limitations. The adopted packaging processes not only reduces board footprint, providing more design flexibility for terminal manufacturers, but also enhances electrical performance to accommodate greater data throughput, enabling device manufacturers to develop more streamlined, competitively advantageous products.　　Uncompromised Performance, Establishing a Robust Foundation for Edge Intelligence Inference　　In terms of performance, BIWIN has harnessed its integrated R&D and packaging and testing business model, along with the optimization and tuning of firmware algorithm, to satisfy the critical demands for error correction, data security and integrity in storage products across various application scenarios.　　The BIWIN EP410 BGA SSD is compatible with PCIe 4.0 interface and NVMe protocol, with its sequential read/write speed reaching 7350MB/s and 6600MB/s respectively, far surpassing the theoretical bandwidth capability of UFS 4.0. Incorporated with self-developed flash memory management algorithm and dynamic bandwidth allocation technology, BIWIN BGA SSD has demonstrated excellent bandwidth stability, qualifying for edge intelligence devices’ access to high-speed data and transfers of high-load requirements with low latency, as well as the responsive handling of sophisticated intelligent tasks. From the application perspective, BIWIN BGA SSD has been included in the list of Google approved suppliers; on the compatibility front, it offers a cross-platform advantage, compatible with a variety of mainstream SoC solutions, which simplifies the design and introduction processes for clients.　　Intelligent Thermal Control and Reliability Design, Ensuring the Stable Operation of Critical Applications　　With the characteristics of chip miniaturization and high integration becoming more pronounced, the increases in power consumption and thermal output have presented challenges for devices’ operational stability and lifespan. Considering this, BIWIN EP410 BGA SSD has further strengthened its reliability design, verification, analysis and management processes. In order to ensure efficient heat dissipation, the product is engineered with DRAM-less architecture with intelligent thermal throttling, as well as in-house LDPC, dynamic and static wear leveling, bad block management and multi-environmental adaptability, contributing to significantly improving the data integrity and security, ensuring long-term stable operations and preventing disconnection during critical usage scenarios including gaming, productivity applications, and content creation.　　Having been subjected to BIWIN’s thorough testing procedures, including electrical performance, SI, application, compatibility, and reliability testings, the products have been validated with their MTBF exceeding 1,500,000 hours and operating temperature ranging from 0℃ to 70℃, enabling the flagship intelligent terminals, for example the 2-in-1 laptops, UAVs, automotive IVI, to catch the wave of edge intelligence upgrades.　　Conclusion　　From the successful mass production of its first PCIe BGA SSD in 2018 to the latest generation EP410 BGA SSD featuring the PCIe Gen4 x4 interface, BIWIN’s continuously evolving products demonstrate its deep expertise in miniaturization and high-integration technologies, while also highlighting its visionary foresight in the ecosystem of edge intelligence. As AI and storage technologies progress toward deeper ecological integration, BIWIN will further leverage its early-mover advantages in mobile terminal storage chips and extend this advantage into the edge intelligence era. Whether in hardware design, software optimization, or ecosystem construction, BIWIN remains committed to advancing industry progress and delivering increasingly intelligent, efficient, and reliable storage solutions to users.
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Release time：2025-03-20 14:01 reading：1119 Continue reading>>
BIWIN SPEC TGS20x Industrial-Grade S<span style='color:red'>SD</span>: Built for Extreme Conditions with High Reliability
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BIWIN SPEC TGS20x Industrial-Grade SSD: Built for Extreme Conditions with High Reliability

　　Industrial equipment demands uninterrupted long-term operation while enduring extreme environmental conditions such as frequent vibrations, wide temperature and humidity variations, and unexpected power failures. These conditions impose stringent requirements on data processing reliability and durability to ensure continuous and stable system operation.　　BIWIN Spec has specifically designed the TGS20x and TGP20x series of wide-temperature industrial-grade SSDs to address these extreme environments. Compatible with SATA III, PCIe 3.0, and other interface standards, these solutions cover multiple form factors including 2.5", mSATA, and M.2 2280/2242, catering to diverse industrial scenarios. The TGS20x series SSDs have been widely adopted in industrial control, rail transit, data communications, and electric power sectors, providing highly reliable data storage support for various high-demand equipment.　　【Supporting Wide Temperature -40℃~85℃ to Ensure Stable Operation】　　Utilizes flash memory chips, controllers, and components that meet wide-temperature standards; supports operational temperatures from -40°C to 85°C and storage temperatures from -55°C to 95°C　　Rigorously tested with Mean Time Between Failures (MTBF) exceeding 3 million hours　　Enhanced through multiple firmware and hardware optimizations, including RAID, SRAM ECC, E2E, 4K LDPC, and power loss protection　　【Domestic Core Components with Customized Technical Support】　　Employs domestic NAND and controllers; leverages in-house firmware and hardware design with advanced packaging and testing; Achieves read/write speeds of up to 560MB/s and 510MB/s respectively; Supports capacities up to 2TB　　P/E cycles up to 3,000 times, featuring high durability　　Offers customized protective technologies including anti-sulfuration, protective coating, anddispensing reinforcement　　【5-Year Supply Cycle with Nationwide Efficient Service】　　Ensures high quality and consistency through fixed-BOM, automated production, rigorous testing, and comprehensive product lifecycle management　　Service centers located in major cities nationwide, including Beijing, Xi'an, Chengdu, Shanghai, Shenzhen, and Hangzhou, providingrapid response and FAE technical support
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Release time：2024-12-23 15:51 reading：1624 Continue reading>>
BIWIN TF200 Series Micro<span style='color:red'>SD</span>: Enhanced Raspberry Pi 4B Compatibility
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BIWIN TF200 Series MicroSD: Enhanced Raspberry Pi 4B Compatibility

　　BIWIN's TF200 series microSD cards have passed the Raspberry Pi 4B AVL certification, ensuring compatibility and adaptability with Raspberry Pi microcomputers.　　The TF200 microSD cards underwent rigorous tests on the Raspberry Pi 4 Model B/4GB platform. These tests included loading each test card with a custom image (including the latest Bullseye image), an automated stress test script, and a locally accessible website using Google Puppeteer for automated testing. After over 15,000 power-off tests and over 2.7 million seconds of continuous operation, the product demonstrated a continuous write speed of over 26 MB/s, a random write speed of up to 717 IOPS, and a random read speed of up to 3525 IOPS. These results meet the testing benchmarks required by Raspberry Pi, ensuring efficient and stable operation of the Raspberry Pi devices.　　The TF200 series microSD cards feature firmware functionalities such as garbage collection and bad block management to ensure stable data recording without frame loss. The product reaches the U3 speed class and V30 video speed class, with sequential read and write speeds of up to 158 MB/s and 113 MB/s respectively, supporting 4K RAW ultra-high-definition video capture and high-speed continuous shooting. Leveraging the company's advanced packaging technologies like multi-layer stacking and ultra-thin Die, the product offers capacities up to 256 GB (with future releases of 512 GB and 1 TB). It also supports flash wear leveling technology with a P/E Cycle of 3000 times. With operational temperature ranges from -25 °C to 85 °C and features such as waterproofing, shock resistance, and temperature shock resistance, the product is well-equipped to handle various complex environmental challenges.　　The TF200 series microSD cards combine high stability, reliability, and durability, making them compatible with mainstream terminal devices. They are suitable for fields like video surveillance, digital education, industrial tablets, and dashcams. Leveraging its expertise in storage solution development and advanced testing, BIWIN can tailor storage device performance, reliability, and power consumption to meet the testing and certification requirements of SoC chips and system platforms. This adaptability ensures a high degree of compatibility with different platforms, effectively meeting the diverse storage needs of various terminal applications.
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Release time：2024-01-26 13:44 reading：2803 Continue reading>>

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