Slowing <span style='color:red'>Memory</span> Market Cools Chip Growth
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Slowing Memory Market Cools Chip Growth

Semiconductor sales growth has slowed substantially in recent months as the rapid price increases that fueled the market's growth for more than two years has slowed to a trickle.The three-month rolling average for chip sales growth slowed to 13.8% in January, the lowest level since November 2016, according to the World Semiconductor Trade Statistics organization. Sales for the quarter were up 13.8% year-over-year, the lowest rate of growth since the fourth quarter of 2016. In fact, it marked the first time since the first quarter of 2017 that the growth rate slipped below 20%.The slowing sales growth has corresponded directly with a decline in the growth rate of DRAM and NAND flash memory prices, which have slowed dramatically in recent months as the memory industry shifts from a prolonged period of supply shortage to oversupply."The softening memory market has started to become a 'headwind' on total IC market growth," said market research firm IC Insights in a recent report. The firm is forecasting that overall chip sales growth will fall to 6% in the fourth quarter.IC Insights — which forecasts that the semiconductor industry has entered a "cooling period" after a prolonged period of expansion — noted that the memory chip market grew by only 8% in the third quarter compared to the second quarter. By contrast, the firm said, the memory chip market grew by 18% from the second quarter to the third quarter last year.Overall, DRAM sales increased by 9% in the third quarter to again set a new record at $28 billion, according to market research firm TrendForce's DRAMeXchange unit. But the firm said that pricing for mainstream DRAM applications such as PC, server and mobile increased by less than 2% in the quarter. Contract pricing for DDR3 consumer DRAM was the first to drop during the quarter because of weakening demand, while contract pricing for graphics DRAM actually decreased by 3% compared to the second quarter because of the sharp demand for cryptocurrency mining, TrendForce said.Also concerning is that TrendForce said that DRAM revenue growth in the third quarter was primarily due to increasing bit shipments, rather than rising prices. "Prices practically flattened out in 3Q18 as the market supply has been steadily expanding in the second half of the year," the firm said in a press statement.TrendForce predicts that DRAM prices, which started to fall in October, will continue to slide through the end of the fourth quarter, officially ending the DRAM boom that lasted for more than two years. Future price declines will be steep because the market has clearly entered an oversupply situation and inventories remain high, the firm said.   Meanwhile, TrendForce also reported recently that NAND flash revenue grew by just 4.4% in the third quarter compared with the second quarter, with the average selling price of devices falling by 10-15% on a contract basis. The firm maintains that the NAND market has been in oversupply since the start of this year.“The market for NAND Flash is expected to remain in oversupply during 4Q18, with steeper price decline for various NAND flash products,” said Ben Yeh, a DRAMeXchange analyst, in a statement.
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Release time：2018-11-28 00:00 reading：1143 Continue reading>>
Micron collaborates with premium German automaker to advance automotive memory technologies
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Micron collaborates with premium German automaker to advance automotive memory technologies

Micron Technology, Inc., (Nasdaq: MU) today announced at Electronica 2018 that it will collaborate with the BMW Group to further advance the development of automotive memory solutions used in vehicles. Memory and storage are key components in accelerating the intelligence and user experience of next-generation systems in vehicles, including in-cabin infotainment as well as advanced driver-assistance systems (ADAS) technology, which together play an important role in making self-driving autonomous cars a reality.Micron and the BMW Group will intensify their existing efforts toward testing and development of automotive memory solutions at Micron’s state-of-the-art lab in Munich, Germany. Using the Test Automation Framework of the BMW Group as a car emulator platform, the two companies will work together to define and validate memory and storage solutions for next-generation platforms. The collaborative effort will leverage Micron’s memory and storage technology expertise, along with its broad portfolio of DRAM, NAND, and NOR technologies, including LPDRAM, e.MMC, UFS and SSD storage solutions.As a proven memory partner for automotive manufacturers, Micron recognizes the importance of validating and testing new automotive memory technologies for robustness and reliability before releasing them into the market. Micron’s customer lab expertise in developing innovative automotive memory technologies will enable the BMW Group to raise the quality of the driving experience in automobiles of the future.“The incorporation of new features and capabilities in advanced in-vehicle infotainment (IVI) and ADAS, such as voice recognition, hand gesturing and image recognition, are driving an explosive growth in both volatile and nonvolatile memory embedded in vehicles, accelerating intelligence at the edge,” said Giorgio Scuro, vice president of Micron’s automotive division. “Micron has a long-standing record working with automotive industry partners, and this joint initiative with the BMW Group is a testament to our expertise in bringing innovative automotive memory technologies to market.”As a leading memory partner with more than 25 years of experience, Micron provides advanced automotive memory solutions that meet stringent quality, reliability and compliance requirements. Micron’s broad portfolio of volatile and nonvolatile memory products are optimized for automotive and supported by a formal product longevity program.
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Release time：2018-11-15 00:00 reading：1360 Continue reading>>
Micron Opens Backend Factory in Taichung Aiming 3D memory Market
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Micron Opens Backend Factory in Taichung Aiming 3D memory Market

Major memory manufacturer Micron on October 26 held an opening ceremony for their backend packaging and testing plant in Taichung. With the opening of this factory, Micron Taiwan will be the world’s only memory vertical integration production base with both manufacturing and testing, and the main target product will be 3D memory, which is currently in high demand.Micron Executive Vice President of Global Operations Manish Bhatia stated that following the opening of the backend packaging and testing plant in Taichung, Micron will be capable of responding to customer’s needs more rapidly, and the production cycle will be shortened. At the same time, they will also focus on more valuable and advanced products.Currently, the hottest product in the memory market is 3D NAND flash memory, and mass shipments of Micron’s 64-layer products are underway .The latest 96-layer NAND flash memory products will also go into mass production in the second half of this year. As a result, Micron is upgrading their production capacity for related products, and this will be the key for Micron to increase their profitability.Taiwan Micron Vice President Liang Ming-cheng pointed out that 3D memory that utilizes TSV technology has specialized processing specifications, and there is no general-purpose equipment. All of the packaging and testing equipment has been independently developed by Micron; therefore, it cannot be outsourced. In the future after the new packaging and testing center begins to be utilized, it will be of assistance in expanding production capacity for 3D memory.Following the movement from semiconductor manufacturing to 3D architecture, integrated manufacturing and testing of high-end ICs has become the main trend by and large. For instance, TSMC is continually expanding and increasing their technological capabilities in the domain of packaging and testing and Micron has established their own vertical production line which integrates manufacturing with packaging and testing, which is further evidence of this trend.Hence it will be worth paying attention to whether or not this technology will bring about changes in the current semiconductor industry chain.
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Release time：2018-11-01 00:00 reading：1200 Continue reading>>
Samsung Reportedly Plans to Cut <span style='color:red'>Memory</span> Production
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Samsung Reportedly Plans to Cut Memory Production

South Korea’s Samsung Electronics is cutting back plans for memory production increases in an effort to keep supplies tight in the face of slowing demand, according to a report by the Bloomberg news service.The report, which cites unnamed sources said to be briefed on the matter, said that Samsung now expects DRAM bit growth of less than 20% this year and NAND flash bit growth of about 30%. Samsung had said earlier this year that it expected DRAM bit growth of about 20% and NAND bit growth of about 40% this year.Samsung declined to comment in the Bloomberg report and also declined an EE Times request for comment through a spokesperson.After tremendous growth over the past 18 months amid shortages, the memory chip market is softening, with industry analysts warning of a looming downturn amid oversupply.IC categories forecasted to grow faster than the overall semiconductor market in 2018. (Source: IC Insights)Market research firm IC Insights said earlier this week that the DRAM market is expected to grow about 53% this year after increasing by 76% in 2017. After rising average selling prices (ASPs) for DRAM continued to boost the market through the first half of the year and into August, the firm said it believes that the DRAM ASP — and subsequent market growth — is at or near its peak, “as a big rise in DRAM capital expenditures for planned capacity upgrades and expansions is likely putting the brakes on steep market growth beginning in 2019.”IC Insights also projects that NAND sales will increase by 29% this year after growing by 46% in 2017. But the NAND market is already headed back to earth with ASPs in decline. DRAMexchange, a research firm that tracks memory chip pricing, projects that NAND ASPs will decline by nearly 10% in the third quarter compared to the second quarter.[Partnered Content: Learn how Silicon Labs’ Blue Gecko Bluetooth Low Energy SoC Kit enables developers to quickly establish a Bluetooth connection]Research firm Nomura said earlier this week that Samsung has once again decided to postpone some DRAM capacity investment at the firm’s P2 fab in Pyeongtaek, South Korea. Samsung is also likely to delay some planned NAND capacity investment in South Korea and China, according to Normura. The firm’s analysts believe that the postponement is designed to reign in supply and shore up prices.
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Release time：2018-09-25 00:00 reading：1130 Continue reading>>
Shortage of Intel CPU to Impact Notebook Shipments, Causing Further Price Decline in the <span style='color:red'>Memory</span> Market
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Shortage of Intel CPU to Impact Notebook Shipments, Causing Further Price Decline in the Memory Market

TrendForce has adjusted its 2018 global notebook shipments projection downwards due to the worsening shortage of Intel CPUs. Intel originally planned to begin mass production of CPUs based on its latest Whiskey Lake platform in 3Q18, when the notebook market would be in the busy sales season. However, PC-OEMs are now finding an insufficient supply of Whiskey Lake CPUs, which has disrupted vendors’ notebook shipment plans for this year’s second half. Therefore, TrendForce now estimates that this year’s total notebook shipments will drop by 0.2% YoY, and the CPU shortage may further impact the entire memory market as well.The precise reason behind the shortage of Intel CPUs is currently unclear because the problem simultaneously affects the newly arrived CPU product lines and product lines that have been in the market for some time. The affected products include the improved version of 14nm++ and product lines based on the 14nm+ Coffee Lake platform, which has been in mass production for half a year and is one of the solutions for mainstream models in the notebook market. The lack of supply for existing CPU product lines is having a significant impact on the notebook market as a whole. TrendForce estimates that the CPU supply gap in the notebook market has increased from around 5% in August to 5-10% in September. There is a possibility that the supply gap may extend to over 10% in 4Q18, and the shortage is expected to be resolved rather later in 1H19.DRAM prices to slide, with PC DRAM anticipating larger price decline due to the CPU shortageTrendForce notes that the CPU shortage is expected to impact the entire memory market as well. DRAM prices are now approaching an inflection point after climbing for nine successive quarters. DRAMeXchange, a division of TrendForce, previously estimated that the contract prices of PC DRAM products will drop by around 2% QoQ in 4Q18 as the market gradually shifts into oversupply. However, it is now possible that the price decline will become larger due the shortage of Intel CPUs and lower demand for notebooks and PC DRAM in a row.On the other hand, the impact of the CPU shortage may also expand to the NAND Flash market. The insufficient supply would cause PC OEMs’ lower expectations of notebooks demand in the upcoming busy season, thus affecting the demand for SSD in the second half of this year. Therefore, TrendForce expects the SSD price decline to be steeper in 4Q18 than in this quarter.With regard to the server market, the migration from the Grantley to the Purley platform is currently taking place. According to TrendForce’s survey, a minority of server OEMs are experiencing longer lead time in the deliveries of Purley processors. This issue will be followed up because it will affect future server shipments if it becomes more widespread. Moreover, both the NAND Flash and DRAM markets are much more vulnerable to the falling demand from the server application than from the PC or notebook application. Therefore, downward corrections of demand for server memory products will cause a steeper drop in quotations of memory products as a whole.
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Release time：2018-09-13 00:00 reading：1371 Continue reading>>
China will take a 'long time' to catch up to memory chip rivals, industry expert says
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China will take a 'long time' to catch up to memory chip rivals, industry expert says

Even as China doubles down on its efforts to dominate the memory chip industry, its domestic companies continue to lag behind the global competition, an industry executive told CNBC on Thursday.The semiconductor industry has been around for decades, but it is poised for another round of growth due to the emergence of new technologies like artificial intelligence and the fifth-generation of mobile networks, according to Lung Chu, president of SEMI China."There's a lot of opportunities in semiconductor," Chu told CNBC's Eunice Yoon at the Morgan Stanley Technology, Media and Telecom Conference in Beijing.In 2014, the Chinese government issued guidelines for the development of China's semiconductor industry through innovation and investments, he explained. "There's evidence that money has been put in but I think it will take a long time for China to catch up with the global leaders."SEMI is a global association for the semiconductor industry, and is present in countries such as the United States, China and South Korea.Last year, global semiconductor revenue topped $400 billion, according to research firms Gartner and IHS Markit. The latter said worldwide revenue grew 21.7 percent and reached $429.1 billion in 2017. The industry is dominated by the likes of Samsung Electronics, Intel, SK Hynix, and Qualcomm.Chu said China was responsible for more than half of the global consumption in the chip industry, yet Chinese local suppliers meet only about 13 percent of the domestic demand. According to Chu, that means Beijing has a massive trade deficit in this space."That's a major concern for the government, for the economy, but it's also a great opportunity for local companies to get into the (integrated circuits) business," he said. "That's the driving force as to why China wants to do more."As part of its Made in China 2025 goals, Beijing wants to have have locally produced chips used in smartphones to make up about 40 percent of the domestic market by 2025, in a move to cut down its reliance on imports. The country's dependency on foreign chips was highlighted when the United States imposed a supplier ban on Chinese telecommunications equipment maker ZTE, which crippled its business.China has raised multiple funds for semiconductor development since 2014, with contributions from government-backed enterprises and industry players to push local companies to develop their own chips that can rival the global competition, according to various reports. Beijing's involvement in the development of its semiconductor industry has been one of the main complaints from the U.S. over China's technology practices.Amid the ongoing trade war between China and the U.S., Chu said many companies in the semiconductor space are worried about investing in the Chinese market."However, because the market is here, the customer is here, the China strategy has to be part of the global strategy or the corporate strategy," he said.
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Release time：2018-08-31 00:00 reading：1268 Continue reading>>
<span style='color:red'>Memory</span> ICs to Account for 53% of Total 2018 Semi Capex
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Memory ICs to Account for 53% of Total 2018 Semi Capex

IC Insights forecasts total semiconductor capital expenditures will rise to $102.0 billion this year, marking the first time that the industry has spent more than $100 billion on capital expenditures in one year.  The $102.0 billion spending level represents a 9% increase over $93.3 billion spent in 2017, which was a 38% surge over 2016.Figure 1 shows that more than half of industry capital spending is forecast for memory production—primarily DRAM and flash memory—including upgrades to existing wafer fab lines and brand new manufacturing facilities. Collectively, memory is forecast to account for 53% of semiconductor capital expenditures this year.  The share of capital spending for memory devices has increase substantially in six years, nearly doubling from 27% ($14.7 billion) in 2013 to a forecast of 53% ($54.0 billion) of total industry capex in 2018, which amounts to a 2013-2018 CAGR of 30%.Figure 1Of the major product categories shown, DRAM/SRAM is forecast to show the largest increase in spending, but flash memory is expected to account for the largest share of capex spending this year (Figure 2).  Capital spending for the DRAM/SRAM segment is forecast to show a 41% surge in 2018 after a strong 82% increase in 2017.  Capital spending for flash memory is forecast to rise 13% in 2018 after a 91% increase in 2017.Figure 2After two years of big increases in capital expenditures, a major question looming is whether high levels of spending will lead to overcapacity and a softening of prices.  Historical precedent in the memory market shows that too much spending usually leads to overcapacity and subsequent pricing weakness.  With Samsung, SK Hynix, Micron, Intel, Toshiba/Western Digital/SanDisk, and XMC/Yangtze River Storage Technology all planning to significantly ramp up 3D NAND flash capacity over the next couple of years (and new Chinese memory startup companies entering the market), IC Insights believes that the future risk for overshooting 3D NAND flash market demand is high and growing.
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Release time：2018-08-30 00:00 reading：1113 Continue reading>>
Toshiba <span style='color:red'>Memory</span> announces merger with K. K. Pangea
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Toshiba Memory announces merger with K. K. Pangea

Toshiba Memory Corporation today announced that it consummated the merger with K. K. Pangea which is its parent company on August 1, 2018. The company name after the merger is Toshiba Memory Corporation. Today the company also introduces the executive officer system to improve the efficiency of business execution and strengthen the corporate governance. The outline of Toshiba Memory and the list of its directors, executive officers and statutory auditors as of August 1, 2018 are as follows.Toshiba Memory Corporation is dedicated to the development, production and sales of flash memory and SSDs. In April 2017, Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Toshiba Memory pioneer cutting-edge memory solutions and services that enrich people’s lives and expand society’s horizons.
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Release time：2018-08-02 00:00 reading：3368 Continue reading>>
ASE to Seize Opportunities in the <span style='color:red'>Memory</span> Market in China
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ASE to Seize Opportunities in the Memory Market in China

Taiwanese semiconductor testing and packaging company, ASE Technology Holding Co., Ltd. yesterday stated that they would increase the scale of their semiconductor development in Mainland China, and in addition to their factory in Fujian Province they would also be open to investment from Tsinghua Holdings to expand their production capacity.In recent years, China has continually expanded the scope of development of their semiconductor industry, especially in the memory market. At the same time, they have also attracted a number of semiconductor companies to China to set up factories, for instance, this year Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) will commence operations at their 16-inch plant in Nanjing. As a result of this, ASE became attracted to the prospect of development in Mainland China.ASE Chairman Jason C.S. Chang commented that ASE’s semiconductor business will participate in the business opportunities that the development of the memory industry in Mainland China has to offer. Recently, Siliconware Precision Industries Co., Ltd. (SPIL) has also constructed a factory in Fujian Province and have opened up investment into SPIL by Tsinghua in Suzhou. In the future as the memory production capacity increases in Mainland China, the scope will also experience a corresponding expansion.
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Release time：2018-07-31 00:00 reading：1116 Continue reading>>
Toshiba <span style='color:red'>Memory</span> Corporation develops 96-layer BiCS FLASH with QLC technology
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Toshiba Memory Corporation develops 96-layer BiCS FLASH with QLC technology

Toshiba Memory Corporation today announced that it has developed a prototype sample of 96-layer BiCS FLASH, its proprietary 3D flash memory, with 4-bit-per-cell (quad level cell, QLC) technology that boosts single-chip memory capacity to the highest level yet achieved.Toshiba Memory will start to deliver samples to SSD and SSD controller manufacturers for evaluation from the beginning of September, and expects to start mass production in 2019.The advantage of QLC technology is pushing the bit count for data per memory cell from three to four and significantly expanding capacity. The new product achieves the industry’s maximum capacity [1] of 1.33 terabits for a single chip which was jointly developed with Western Digital Corporation.This also realizes an unparalleled capacity of 2.66 terabytes with a 16-chip stacked architecture in one package. The huge volumes of data generated by mobile terminals and the like continue to increase with the spread of SNS and progress in IoT, and the need to analyze and utilize that data in real time is expected to increase dramatically. That will require even faster than HDD, larger capacity storage and QLC products using the 96-layer process will contribute a solution.A packaged prototype of the new device will be exhibited at the 2018 Flash Memory Summit in Santa Clara, California, USA from August 6th to 9th.Looking to the future, Toshiba Memory will continue to improve memory capacity and performance and to develop 3D flash memories that meet diverse market needs, including the fast expanding data center storage market.
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Release time：2018-07-24 00:00 reading：3252 Continue reading>>

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