ROHM’s New Compact, Highly Reliable Package Added to Automotive 40V/60V <span style='color:red'>MOS</span>FET Lineup
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ROHM’s New Compact, Highly Reliable Package Added to Automotive 40V/60V MOSFET Lineup

　　ROHM has expanded its lineup of low-voltage (40V/60V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9mm × 6.0mm).　　In recent years, automotive low-voltage MOSFETs have been trending toward smaller packages, such as the 5060-size and even more compact options. However, this miniaturization introduces significant challenges for achieving reliable mounting, primarily due to narrow terminal spacing and leadless designs.　　To address these issues, the new HPLF5060 package offers a smaller footprint compared to the widely used TO-252 package (6.6mm × 10.0mm) while enhancing board-mount reliability through the adoption of gull-wing leads. Additionally, the use of copper clip junction technology enables high-current operation, making the HPLF5060 an ideal solution for demanding automotive environments.　　Mass production of new products using this package began in November 2025 (sample price: $3.5/unit, excluding tax).　　In addition to expanding the lineup of products using this package, mass production of the smaller DFN3333 (3.3mm × 3.3mm) package, which employs wettable flank technology, is scheduled to begin around February 2026. Furthermore, development has commenced on a TOLG (TO-Leaded with Gull-wing) package (9.9mm × 11.7mm) to further expand the lineup of high-power, high-reliability packages.　　☆ : Under Development　　Application Examples　　Main inverter control circuits, electric pumps, LED headlights, etc.　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Gull-Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability. It is called “Gull-Wing” because its appearance resembles the wing of a seagull.　　Copper Clip Junction Technology　　A technology that uses copper clips (flat metal bridges) to connect chips and lead frames directly, replacing the conventional wire bonding method.　　Wettable Flank Technology　　A technology for plating the sides of the lead frame on bottom electrode packages such as QFN and DFN to improve mounting reliability.
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Release time：2026-02-25 17:46 reading：266 Continue reading>>
BIWIN Mini SSD Earns Dual Honors: TWICE Picks Award and AVRONA Most Innovative Award
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BIWIN Mini SSD Earns Dual Honors: TWICE Picks Award and AVRONA Most Innovative Award

　　Recently, BIWIN’s innovative product Mini SSD was honored with multiple international awards at CES 2026, earning the TWICE 2026 Picks Awards Winner as well as the AVRONA Most Innovative Award.　　With its breakthrough design philosophy and strong technical capabilities, this “small form factor, superior performance” storage solution not only continues BIWIN’s legacy of technological innovation, but also aligns seamlessly with the accelerating evolution of edge AI.　　Technological Breakthroughs Addressing Core Storage Challenges　　Conventional consumer storage solutions have long struggled to balance performance, portability, and expandability. BIWIN Mini SSD overcomes these limitations through three key innovations:　　AdvancedLGA packaging, compressing the form factor to just 15 × 17 × 1.4 mm (approximately the size of half a coin) and supporting capacities from 512GB to 2TB;　　PCIe 4.0 ×2interface with NVMe 1.4 protocol, delivering read speeds of up to 3700MB/s and write speeds of 3400MB/s, far surpassing traditional storage card solutions and rivaling mainstream consumer-grade M.2 SSDs;　　An industry-first standardized slot-in SSD design, enabling effortless TB-level expansion through a simple “open – insert – lock” three-step process, dramatically simplifying storage upgrades.　　Small in Size, Big in Capability: Empowering Two Key Tracks　　For consumers, BIWIN Mini SSD introduces a new level of convenience as no specialized tools are required for individuals to expand storage capacity, and its flagship-class performance is capable of supporting smooth operation of intelligent devices.　　For device manufacturers, its standardized interface, modular architecture, and scalability significantly streamline BOM management, reduce manufacturing, inventory, and after-sales costs, and support optimization across the entire product lifecycle.　　The product has already entered deep collaborations with well-known brands such as One-Netbook (ONEXPLAYER) and GPD, helping partners build differentiated competitive advantages in the market.　　Global Recognition Validating Technical Excellence　　Leveraging its ultra-compact design, high scalability, and reliable performance, BIWIN Mini SSD is redefining the integrated paradigm between AI terminals and storage technologies. Thanks to its disruptive innovation, the product was selected for TIME’s “Best Inventions of 2025”, becoming the only storage product worldwide to make the list.　　It subsequently won the “Best-in-Show” Award at Embedded World North America 2025, earning strong endorsement from industry authorities for both its technological advancement and commercialization potential. The dual awards at CES 2026 further reinforce the product’s real-world value and promising market outlook.　　Most notably, the latest achievement marks another milestone: BIWIN Mini SSD has been shortlisted as a finalist for the 2026 Edison Awards, often referred to as the “Oscars of Innovation.” This prestigious recognition, honoring the world’s most outstanding innovations, adds another heavyweight accolade to BIWIN Mini SSD’s growing global honors portfolio.
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Release time：2026-02-06 17:44 reading：444 Continue reading>>
ROHM launches SiC <span style='color:red'>MOS</span>FETs in TOLL package that achieves both miniaturization and high-power capability
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ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability

　　ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.　　In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called “the pizza box type,” stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.　　ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.　　The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September 2025 (sample price: $37.0/unit, tax excluded). 　　Product Lineup　　Application Examples　　・Industrial equipment: Power supplies for AI servers and data centers, PV inverters, ESS (energy storage systems)　　・Consumer equipment: General power supplies　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Totem Pole PFC Circuit　　A highly efficient power factor correction circuit configuration that reduces diode losses by using MOSFETs as rectifier elements. The adoption of SiC MOSFETs enables high voltage withstand capability, high efficiency, and high-temperature operation for the power supply.
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Release time：2025-12-04 17:10 reading：1153 Continue reading>>
ROHM launches wide SOA <span style='color:red'>MOS</span>FET for AI servers in compact 5×6mm package
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ROHM launches wide SOA MOSFET for AI servers in compact 5×6mm package

　　ROHM has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5.0mm × 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.　　The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.　　Therefore, ROHM has expanded its line-up of 100V power MOSFETs ideal for hot-swap circuits in AI servers to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher density mounting compared to the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8.0mm × 8.0mm size) package, which ROHM has released in May 2025.　　The new product achieves a low on-resistance (RDS(on)) of 4.0mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs.　　Mass production of the new product began in September 2025 (sample price: $5.5/unit, excluding tax).　　ROHM will continue to expand its product lineup for 48V power supplies, which are increasingly adopted in applications such as AI servers. By providing highly efficient and reliable solutions, we will contribute to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.　　Application Examples　　•48V system AI servers and data center power hot-swap circuits　　•48V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.)　　•Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　•UPS, emergency power systems (battery backup units)　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　SOA(Safe Operating Area)　　The voltage and current range within which a device can operate safely without damage. Operation beyond this safe operating area may cause thermal runaway or damage; therefore, consideration of the SOA is essential, particularly in applications where inrush current or overcurrent may occur.　　Hot-swap circuit　　The complete circuitry supports the hot-swap function, which enables the removal or insertion of components while the device's power supply remains active. Comprising MOSFETs, protective elements, and connectors, it suppresses inrush currents occurring during component insertion and provides overcurrent protection, thereby ensuring the safe operation of the system and connected components.　　Inrush Current　　The high current exceeds the rated current value that flows momentarily when switching on electronic equipment. Controlling this prevents damage to devices and stabilizes the system by reducing the load on components within the power supply circuit.　　On-resistance(RDS(on))　　The resistance value between the drain and source terminals when the MOSFET is in operation (on). The lower the value, the less power loss occurs during operation.
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Release time：2025-11-28 17:28 reading：1112 Continue reading>>
ROHM has Developed Ultra-Compact C<span style='color:red'>MOS</span> Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current
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ROHM has Developed Ultra-Compact CMOS Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current

　　ROHM’s ultra-compact CMOS Operational Amplifier (op amp) TLR1901GXZ achieves the industry’s lowest operating circuit current. This IC is optimized to be applied as a measurement sensing amplifier in size-constrained applications such as handheld measurement instruments, wearable devices, and indoor motion detectors.　　As the demand continues to grow for more sophisticated control in battery-driven devices, the importance of sensors that detect parameters such as temperature, humidity, vibration, pressure, and flow rate – along with the op amps used to amplify these sensor signals – continues to rise. At the same time, greater miniaturization and energy savings in applications is a necessary step to realizing a sustainable society –placing similar demands on individual devices as well.　　In response to these evolving market needs, ROHM has advanced its process, packaging, and proprietary Nano Energy™ circuit technologies to develop an op amp that addresses three key requirements: lower power consumption, higher accuracy, and compact size. The newly developed TLR1901GXZ achieves an ultra-compact footprint of less than 1mm2 by adopting a WLCSP (Wafer Level Chip Scale Package) with a fine ball pitch of 0.35mm while delivering an industry-leading low operating current of 160nA (typ.). This not only contributes to high-density mounting in space-constrained applications, but also to a significantly extended battery life.　　Moreover, the TLR1901GXZ features an exceptionally low input offset voltage of just 0.55mV (max.), one of the best among ultra-low current op amps. This represents an approximate 45% reduction compared to typical products on the market. A maximum input offset voltage temperature drift of 7uV/°C ensures high accuracy operation over the operating temperature range.　　Design flexibility can be further enhanced by pairing the op amp with ROHM’s ultra-compact general-purpose resistors, such as the MCR004 (0402 metric / 01005 inch) and MCR006 (0603 metric / 0201 inch), for applications like gain adjustment. The MCR004 series lineup includes the MCR004E –an environmentally friendly, fully lead-free option designed to support sustainable designs. Adapter boards featuring SSOP5 package ICs are offered as well to support initial evaluation and replacement assessments.　　Going forward, ROHM will continue to pursue further power savings in op amps by advancing both miniaturization and original ultra-low power technologies. At the same time, we are committed to improving device performance by reducing noise and offset, expanding power supply voltage ranges, and contributing to solving social issues through more precise application control.　　Key Product Characteristics　　Application Examples　　• Consumer devices: wearables, smart devices, motion sensors, etc.　　• Industrial equipment: gas detectors, fire alarms, handheld measurement instruments, environmental sensors for IoT, etc.　　Online Sales Information　　Sales Launch Date: Now　　Pricing: $2.1/unit (samples, excluding tax)　　Online Distributors: AMEYA360　　• Applicable Part No: TLR1901GXZ-E2　　• IC-Mounted Adapter Board: TLR1901GXZ-EVK-001　　What is Nano Energy™ Technology?　　Nano Energy™ refers to proprietary ultra-low current consumption technology that achieves a current consumption on the order of nano ampere (nA) by combining advanced analog technologies covering circuit design, layout, and processes utilizing ROHM’s vertically integrated production system.　　This contributes not only to extending operating time of battery operated IoT and mobile devices, but also improving efficiency in industrial and automotive equipment where increased power consumption is problematic.　　https://www.rohm.com/support/nano 　　Nano Energy™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from wafers and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　Input Offset Voltage　　The small voltage difference that must be applied between the inverting and non-inverting inputs of the operational amplifier to make the output voltage exactly zero.　　Input Offset Voltage Temperature Drift　　Refers to how much an op amp's input offset voltage changes as the temperature changes.
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Release time：2025-09-12 17:23 reading：737 Continue reading>>
ROHM’s SiC <span style='color:red'>MOS</span>FETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production
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ROHM’s SiC MOSFETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production

　　ROHM and Schaeffler, a leading German automotive supplier, have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer.High voltage inverter brickSiC MOS Wafer　　The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack.　　“Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness,” says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.　　Modularity and scalability as the key to easy integration　　As a core component of an inverter, a brick has to meet strict requirements. The characteristics of the sub-module are indicative of the factors behind the current sales success and start of volume production: ROHM’s silicon carbide (SiC) power semiconductors enable the frame-mounted sub-module with high power density to be compact, efficient, and readily integrated into various inverters through its modular and scalable design. The sub-module incorporates the power module for pulse width modulation (PWM) of the current pulses, the DC link capacitor, a DC link and a cooler. Moreover, the brick has a DC boost function, thanks to which a vehicle with 800 V architecture can also be charged at a 400 V charging station at a charging speed of 800 V.　　“We are glad about the launch of volume production for Schaeffler’s inverter brick with our 4th generation SiC MOSFET,” says Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM. “With our SiC technology we are making a substantial contribution to increasing the efficiency and performance of electric cars. Working with Schaeffler as our partner, we are thus fostering innovation and sustainability in the automotive industry,” Dr. Ino adds.　　The strategic partnership of Schaeffler (originally initiated under Vitesco Technologies) with ROHM has existed since 2020 and serves to secure capacity for energy-efficient SiC power semiconductors.Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　About Schaeffler Group　　The Schaeffler Group has been driving forward groundbreaking inventions and developments in the field of motion technology for more than 75 years. With innovative technologies, products and services for electric mobility, CO₂-efficient drives, chassis solutions and renewable energies, the company is a reliable partner for making motion more efficient, intelligent and sustainable – over the entire life cycle. Schaeffler describes its comprehensive range of products and services in the mobility ecosystem by means of eight product families, from bearing solutions and linear guidance systems of all kinds to repair and monitoring services. With around 120,000 employees at more than 250 locations in 55 countries, Schaeffler is one of the world’s largest family-owned companies and ranks among Germany’s most innovative companies.
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Release time：2025-09-05 16:57 reading：783 Continue reading>>
ROHM Develops an Ultra-Compact <span style='color:red'>MOS</span>FET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：788 Continue reading>>
ROHM Introduces a New <span style='color:red'>MOS</span>FET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time：2025-07-03 14:52 reading：734 Continue reading>>
ROHM's SiC <span style='color:red'>MOS</span>FET Adopted for Mass Production in Toyota's New BEV
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ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　~Integration in traction inverters extends the cruising range and improves performance~　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.　　About the "bZ5"　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.　　About HAIMOSIC (SHANGHAI) Co., Ltd.　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/
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Release time：2025-06-23 14:11 reading：693 Continue reading>>
Semikron Danfoss’ Module with ROHM’s latest 2kV SiC <span style='color:red'>MOS</span>FETs Integrated into SMA’s Large Scale Solar System
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Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System

　　SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs inside its new large scale solar system “Sunny Central FLEX”, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies.　　“ROHM’s new 2kV class SiC MOSFETs are designed to enable simple and highly efficient converter topologies for 1500V DC-links. It is developed with high reliability targets and cosmic radiation robustness – addressing the stringent conditions and extended converter lifetime requirements of the photovoltaic sector and beyond,” says Wolfram Harnack, President at ROHM Semiconductor GmbH. “The technology of our SiC device structure and integrated on-chip gate resistance eases device paralleling and simplifies high power module designs. The mass production has started,” adds Harnack.　　Semikron Danfoss’ SEMITRANS® 20 has designed for high power applications and fast-switching operations, it represents the next generation of power modules for large converters. SEMITRANS® 20 with ROHM’s 2kV SiC MOSFETs is an integral part of SMA’s Sunny Central FLEX. “Semikron Danfoss and ROHM have collaborated for over a decade, focusing primarily on the implementation of silicon carbide (SiC) in power modules. More recently, we have teamed up to integrate silicon IGBTs as well”, says Peter Sontheimer, Senior Vice President of Semikron Danfoss’ Industry division.　　“The new SEMITRANS® 20 offers simple, efficient solutions for 1500VDC applications. These modules are ideal for solar and energy storage inverters. Upcoming high-power electric truck chargers, as well as wind converters, will also benefit,” adds Sontheimer.　　"The cooperation between SMA, Semikron Danfoss and ROHM is proof of how the seamless integration of innovative technologies creates the conditions for future-oriented energy projects," said Bernd Gessner, Product Manager Power Conversion Systems at SMA. "The demands on these solutions are higher than ever. SMA has decades of expertise and fulfills the highest requirements in terms of performance, reliability, durability and flexibility. The fact that Sunny Central FLEX meets these highest future-proof standards is also the result of the excellent cooperation with our partners who share the same commitment to excellence."　　About SMA Solar Technology AG        As a leading global specialist in photovoltaic and storage system technology, the SMA Group is setting the standards today for the decentralized and renewable energy supply of tomorrow. SMA’s portfolio contains a wide range of efficient PV and battery inverters, holistic system solutions for PV and battery-storage systems of all power classes, intelligent energy management systems and charging solutions for electric vehicles and power-to-gas applications. Digital energy services as well as extensive services round off SMA’s range. SMA inverters installed throughout the world within the last 20 years with a total output of approximately 144 GW help avoid the emission of more than 64 million tons of CO2. SMA’s multi-award-winning technology is protected by more than 1,600 patents and utility models. Since 2008, the Group’s parent company, SMA Solar Technology AG, has been listed on the Prime Standard of the Frankfurt Stock Exchange (S92) and is listed on the SDAX index.　　About Semikron Danfoss        Semikron Danfoss is a global technology leader in power electronics. Our product offerings include semiconductor devices, power modules, stacks and systems. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainably and thus to significantly reduce overall CO2 emissions – facing one of the biggest challenges today. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity and service to deliver best-in-industry performance and for a sustainable future. Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. We employ more than 3,500 people in 28 locations across the world. Our global footprint with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the United States ensures an unmatched service for our customers and partners. We offer more than 90 years of combined expertise in power module packaging, innovation and customer applications – making us the ultimate partner in power electronics.
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Release time：2025-04-29 10:49 reading：879 Continue reading>>

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