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Samsung Reportedly Restarts 1.4nm Push, Targets 2029 Mass Production to Close Gap with TSMC, Intel

　　As Intel and TSMC both target 1.4nm mass production around 2028-29, Samsung—after reportedly delaying its own roadmap—is now re-entering the race. According to The Bell, the company has resumed efforts to commercialize its 1.4nm (SF1.4) foundry process, with mass production now slated for 2029, placing it slightly behind its leading rivals.　　Samsung is also understood to have recently requested early development of process equipment from domestic and overseas partners. As noted by the report, it has recently shared its 1.4nm process roadmap with major semiconductor equipment makers, including Applied Materials and Lam Research.　　Notably, the report, citing industry sources, points out that Samsung Electronics has already installed ASML’s next-generation High-NA extreme ultraviolet (EUV) lithography equipment at its NRD-K facility. The High-NA EUV tools are understood to be applied to select layers starting from the 1.4nm process, the report explains.　　Why Samsung Delayed 1.4nm Plans　　The Bell adds that the original 2027 target has been pushed back to 2029, as Samsung redirects focus toward strengthening its 2nm (SF2) and derivative SF2P processes, signaling a shift toward yield stabilization and process optimization over aggressive node advancement.　　This strategic pivot is also reflected at the product level. A previous Global Economic News report suggested that Samsung has shifted the manufacturing process for its next-generation flagship smartphone processor, the Exynos 2800, from the originally planned 1.4nm node to an advanced version of its 2nm process.　　A Closer Look at 1.4nm Plans for Intel, TSMC　　Samsung Electronics’ renewed push into its 1.4nm process is drawing attention over whether it can narrow the technology gap with rivals such as TSMC and Intel. According to Economic Daily News, TSMC is targeting 1.4nm pilot production as early as 3Q27, with mass production planned for 2H28.　　However, Tom’s Hardware notes that TSMC is expected to skip ASML’s High-NA EUV tools through 2029, meaning its 1.4nm node would proceed without the advanced system being adopted by Intel and Samsung.　　For Intel, Reuters reports that its 18A-P process has already entered pilot production, with the company reportedly targeting 14A risk production in 2028, followed by high-volume manufacturing in 2029.

Key word：

Samsung

Release time：2026-07-01 11:39 reading：144 Continue reading>>

Trade news

Korea’s High-Purity CO₂ Inventory Reportedly Falls Below One Month; Samsung, SK hynix Under Pressure

　　Recent geopolitical tensions have created another potential bottleneck for Korea’s semiconductor supply chain. The supply of high-purity carbon dioxide (CO₂) used in advanced semiconductor manufacturing has reportedly tightened. According to The Elec, industry sources say total inventory across the supply chain has recently fallen below one month’s supply. Under normal conditions, semiconductor manufacturers and gas suppliers each maintain about two weeks of inventory, equivalent to roughly one month’s supply in total.　　Samsung Electronics is estimated to consume approximately 1,800–2,000 metric tons of high-purity CO₂ each month, while SK hynix uses roughly 600–700 metric tons, the report says.　　The report notes that production at Samsung Electronics and SK hynix has not yet been affected. However, shrinking inventory buffers have prompted both companies to step up procurement efforts, although additional supply remains difficult to secure even at higher prices.　　Still, according to Mydrivers, sources say that if supply tightness persists, Samsung and SK hynix’s advanced DRAM and NAND production will face pressure, making price increases inevitable.　　Why High-Purity CO₂ Matters for Chip Manufacturing　　High-purity CO₂ plays a key role in supercritical semiconductor cleaning processes. The Elec notes that when CO₂ exceeds its critical temperature and pressure, it enters a supercritical state that combines the properties of liquids and gases. This enables it to effectively dissolve wafer residues while penetrating deep into fine semiconductor patterns to remove contaminants, making the technology well suited for advanced semiconductor manufacturing.　　The availability of high-purity CO₂ is closely tied to the supply of its upstream feedstock. As The Elec notes, CO₂ feedstock is recovered as a byproduct of oil refining, petrochemical production, and hydrogen manufacturing. Instability in crude oil supplies caused by tensions in the Middle East, coupled with lower operating rates at South Korea’s petrochemical plants, has significantly reduced the availability of CO₂ feedstock.　　The report adds that liquefied CO₂ prices have risen by roughly 20% since the beginning of the year, with industry sources expecting supply tightness to persist through the end of 2026. South Korea’s major suppliers of high-purity CO₂ include Taekyung Chemical, Sundo Chemical, Dongkwang Chemical, and SK Airplus, with Taekyung Chemical recognized as the country’s leading supplier.　　An industry expert cited by The Elec said geopolitical risks stemming from the Middle East are once again disrupting semiconductor material supplies, following earlier disruptions involving helium, anhydrous hydrogen fluoride, and propylene glycol monomethyl ether acetate (PGMEA).

Key word：

Korea’s High-Purity CO₂

Release time：2026-06-30 10:59 reading：195 Continue reading>>

Trade news

ROHM Launches AG16xFNxx Series MOSFETs for Automotive 48V Power Supply Systems

　　ROHM has developed the “AG16xFNxx Series,” a lineup of 80V power MOSFETs designed for 48V power supply systems, which are becoming increasingly common in automotive applications.　　In the automotive sector, power demand is increasing, particularly in high-end vehicle models. 48V power supply systems are gaining attention as a highly efficient alternative to conventional 12V power supply systems. With widespread adoption expected around 2030, there is a growing need for 80V power MOSFETs that can achieve even lower power losses than standard 100V devices.　　ROHM’s new products are expected to enable downsizing compared to standard automotive MOSFET packages such as the TO-252 (6.6 × 10.0mm) by adopting the HPLF5060 (4.9 × 6.0mm) and DFN3333 (3.3 × 3.3mm) packages.　　The HPLF5060 features Gull-Wing Leads, while the DFN3333 features Wettable Flank Technology, contributing to improved reliability on PCBs (Printed Circuit Boards). Furthermore, by adopting Copper Clip Junction Technology to enhance heat dissipation, these devices are capable of handling high currents. All models comply with the automotive reliability standard AEC-Q101, ensuring high reliability.　　Mass production of new products began in April 2026 for the AG160FNS4FRA (HPLF5060) and the AG166FNH7FRA (DFN3333) (sample price: $3.5/unit, excluding tax). Online sales have also started, and the products are also available for online purchase through online distributors such as DigiKey and Farnell.　　The product lineup of these packages will be further expanded in the near future. In addition, development of TOLG (TO-Leaded with Gullwing, 9.9 × 11.7mm) packaged products has begun, with continued expansion of the lineup of high-power, high-reliability 80V MOSFETs.　　Application ExamplesAutomotive 48V systems: Main inverter control circuits, electric motors, electric water pumps, etc　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　TerminologyGull-Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It provides higher mounting reliability. It is called “Gull-Wing” because its appearance resembles the wing of a seagull.　　Wettable Flank Technology　　A technology for plating the sides of the lead frame on bottom electrode packages such as QFN and DFN to improve mounting reliability.　　Copper Clip Junction Technology　　A technology that uses copper clips (flat metal bridges) to connect chips and lead frames directly, replacing the conventional wire bonding method.

Key word：

ROHM

Release time：2026-06-29 11:20 reading：170 Continue reading>>

Trade news

Decoding Micron’s SCAs: Reportedly 20% of DRAM Output, Toward 50% of Long-Term Memory Revenue

　　Shortly after announcing a strategic agreement with Anthropic covering AI memory and storage architecture design—part of its broader push into Strategic Customer Agreements (SCAs)—Micron expanded on its long-term deal pipeline during its latest earnings call.　　According to Investing.com, the company has signed 16 SCAs, spanning roughly 20% of its DRAM output and about one-third of its NAND volumes over the contract period. CNBC, citing CEO Sanjay Mehrotra, notes that these strategic customer agreements are expected to account for roughly half — or even more — of Micron’s total revenue once fully in place.　　SCA Deal Structure and Size　　Micron’s SCAs provide a broad customer base and secure upfront payment commitments prior to delivery. According to Reuters, the US$22 billion in commitments stems from strategic customer agreements spanning data center, consumer, and automotive markets. The contracts include take-or-pay provisions, cash deposits, and pricing floors aimed at securing supply and supporting margin stability, the report adds.　　In detail, ZDNet explains that Micron’s SCAs include binding volume commitments, while also setting an upper price cap tied to prevailing market levels from April to June, alongside a contractual price floor applied over the full term of the agreements. Meanwhile, next-generation products such as high-bandwidth memory (HBM), DDR6, and LPDDR6 are priced separately through negotiated terms, leaving room for additional upside, the report says.　　Notably, the overall scale of the agreements could be significantly larger than the US$22 billion figure. Citing Micron, Reuters reports that remaining performance obligations (RPOs)—a key indicator of contracted future revenue—across its current agreements stand at approximately US$100 billion.　　Implications for the LTA Model　　Citing CFO Mark Murphy, CNBC points out that the move is good for Micron, as it gives the company visibility into demand and locked-in volumes, allowing it to invest with greater confidence.　　As explained by Yonhap News, unlike traditional annual long-term supply agreements (LTAs), SCAs lock in both volume and pricing over a five-year term (or three years in the automotive segment), effectively pre-agreeing key commercial terms over the contract duration.　　From a broader industry perspective, TrendForce observes that these LTAs, featuring both floor and ceiling pricing mechanisms, could incentivize suppliers to accelerate capacity expansion during 2027–2030 in order to fulfill committed demand, potentially creating additional upside for industry-wide supply growth.　　Micron’s memory peers are also expected to follow suit. ZDNet notes that South Korean players such as Samsung Electronics and SK hynix stand to benefit from these agreements over the medium to long term.　　This trend is already reflected in recent deals. An April report from Green Economy News suggests SK hynix is structuring its long-term DRAM agreements with Microsoft and Google to include advance payments of around 10%–30% of total contract value. At the core of the Microsoft deal is a three-year DDR5 supply agreement starting this year, while discussions with Google reportedly involve a long-term DRAM contract of up to five years, with a possible two-year extension tied to next-generation HBM supply.

Key word：

Micron

Release time：2026-06-26 10:53 reading：228 Continue reading>>

Trade news

Samsung Unveils UFS 5.0 Storage, Claims Industry’s Fastest with 10.8GB/s Speeds

　　While advancing its next-generation HBM development, Samsung is also pushing forward on the NAND front, unveiling what it claims is the industry’s first and fastest Universal Flash Storage (UFS) 5.0 solution. According to Samsung, the device delivers sequential read speeds of up to 10.8 GB/s and write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard.　　Building on this performance leap, Samsung said mass production is scheduled to begin in the fourth quarter of this year, with capacities of up to 1TB. As noted by Chosun Biz, the solution is based on JEDEC’s latest embedded storage standard, UFS 5.0, and is built on the company’s ninth-generation V-NAND technology.　　According to its press release, Samsung’s UFS 5.0 is designed to enable more seamless and efficient AI experiences on next-generation mobile devices, ranging from flagship smartphones to XR headsets and AI wearables. The improved performance is expected to reduce latency and accelerate response times when running large language models (LLMs) in on-device AI applications.　　UFS 5.0 Key Specs in Focus　　Generative AI is rapidly migrating from cloud environments to on-device deployment, driving a sharp increase in the volume of data required for local processing. As a result, storage is shifting from a passive data repository into a core infrastructure layer that directly supports AI computation.　　Against this backdrop, Samsung’s new storage solution delivers sequential read speeds of up to 10.8 GB/s and sequential write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard. On the other hand, the product’s power efficiency, according to the press release, has also been improved by over 40% compared with Samsung’s UFS 4.1 solution, driven by a range of architectural enhancements including clock gating and multi-voltage design technologies.　　The device also features a more compact design. According to Samsung, the UFS 5.0 solution comes in an ultra-compact package measuring just 7.5mm × 13mm × 0.9mm, making it 16.7% smaller than its predecessor. The reduced form factor enhances design flexibility and improves internal space efficiency across a wide range of applications, including smartphones, wearables, and extended reality (XR) devices.

Key word：

Samsung

Release time：2026-06-25 10:40 reading：283 Continue reading>>

Trade news

UMC May Net Profit Surges 203% YoY as Utilization Strength Drives Earnings Upside

　　Ahead of its planned second-half price increases, UMC is already riding a profit upswing fueled by robust utilization rates. The foundry posted May revenue of NT$22.94 billion, up 17.8% year-over-year, while net profit soared 203% to NT$8.45 billion, translating into EPS of NT$0.68, according to its latest unaudited earnings disclosure.　　Notably, May EPS alone nearly matched the NT$0.71 generated in the whole second quarter of last year, and accounted for roughly 53% of the NT$1.29 earned in the first quarter of 2026, according to the Economic Daily News and MoneyDJ.　　The strong momentum in May aligns with UMC’s Q2 guidance. According to Central News Agency, wafer shipments are expected to rise 7%–9% QoQ, with utilization reaching 81%–83%. ASPs are projected to increase 1%–3%, supporting gross margin close to 30%.　　Industry sources cited by the Economic Daily News further indicate UMC’s overall capacity utilization averaged around 85% in the second quarter of 2026. The company’s 12-inch fab in Tainan has yet to reach full utilization, while its Singapore facility remains fully loaded and its Xiamen fab is operating near full capacity, the report suggests.　　Meanwhile, demand for specialty 8-inch process technologies continues to strengthen, with product lines including PMICs maintaining stable order intake, as noted by the report.　　UMC has further cemented its position in the mature-node foundry segment, with 22/28nm accounting for 34% of wafer revenue, followed by 40nm at 18%, according to its latest quarterly earnings. Geographically, Asia Pacific remained the largest market at 65% of sales, while North America contributed 21%.　　Intel Collaboration Rumors　　While market speculation around a potential UMC–Intel partnership on 3nm technologies has intensified, UMC said it does not comment on rumors or market speculation, as noted by TechNews.　　More concretely, the 12nm collaboration between UMC and Intel is progressing smoothly. According to the report, the jointly developed 12nm FinFET platform is on track for mass production in 2027. The program is being advanced in close collaboration, with process validation expected to complete in 2026 before production is transferred to Intel’s Ocotillo fab in Arizona, the report adds.　　Additionally, the Economic Daily News also notes that UMC is focusing on silicon photonics and advanced packaging. The company has secured silicon photonics process licensing and is leveraging its proprietary SOI process and 8-inch volume production experience to advance a 12-inch silicon photonics platform. Meanwhile, embedded deep trench capacitor products have entered mass production and begun shipment, and have been designed into international customers’ supply chains, according to the report.

Key word：

UMC

Release time：2026-06-25 10:38 reading：264 Continue reading>>

Trade news

SanDisk Goes Beyond HBF: Patent Bonds Processor onto NAND Tile, with HBM Stacks on Shared Interposer

　　While SanDisk is speeding up the development of High Bandwidth Flash (HBF), a next-generation architecture that vertically stacks NAND, the company is also advancing additional memory concepts aimed at addressing structural capacity constraints.　　According to a U.S. patent (US 12,430,274 B2) filed and published by SanDisk earlier, the proposed design integrates a multi-core processor directly onto a CBA (CMOS Bonded to Array) memory tile — which itself combines a large NAND flash array with a CMOS logic layer.　　The integrated stack is then mounted on an interposer, with stacks of HBM semiconductor dies affixed around one or more sides of the combined stack, SanDisk notes.　　Rationale Behind the Design　　The design rationale behind SanDisk’s approach, as noted by Wccftech, is partly driven by the inherent limitations of HBM, particularly its relatively constrained capacity, as well as the challenges that HBF has yet to fully address, including latency, power efficiency, and system-level integration complexity.　　To overcome HBM’s capacity ceiling, SanDisk previously introduced its HBF architecture, which adopts a similar concept to HBM by vertically stacking multiple layers of NAND flash and connecting them via through-silicon vias (TSVs) to form a unified memory stack, according to Wccftech.　　While current HBM solutions typically offer 32–64GB per stack, HBF is designed to scale significantly higher, with reported capacity reaching up to 4TB. According to SanDisk, HBF is capable of closely matching HBM’s bandwidth while delivering 8-16x the capacity of HBM at a similar cost.　　However, despite NAND offering higher capacity at a lower cost, Wccftech also points out that it is positioned further from the compute die, resulting in slower data access compared to DRAM-based architectures. In response, SanDisk’s latest patent, as highlighted by the report, proposes a 3D stacking design in which a NAND flash tile, built using a CBA structure, is positioned beneath a compute tile such as an AI accelerator or GPU.　　Under this configuration, HBM DRAM would still be integrated on the same interposer, but would serve a distinct role within the overall memory-compute hierarchy, according to Wccftech. As highlighted by the report, this architecture allows HBM to handle immediate, high-speed memory operations, while the NAND flash layer within the memory tile is used for read/write-intensive workloads and large-scale data storage.

Key word：

SanDisk

Release time：2026-06-23 10:58 reading：298 Continue reading>>

Trade news

Intel Taps SK hynix Ex-CEO as Foundry EVP to Lead Advanced Packaging Push as EMIB, HBI Scale Up

　　Intel CEO Lip-Bu Tan is accelerating the company’s foundry ambitions, continuing to recruit seasoned talent from across the chip industry. The latest move is the appointment of Seok-Hee Lee as Executive Vice President of Intel Foundry, according to an Intel announcement on June 18.　　Notably, Lee joins Intel after serving as president and CEO of SK On and previously leading SK hynix. A semiconductor industry veteran, he also held engineering leadership roles at Intel and in academia, bringing deep expertise in advanced process technologies and large-scale manufacturing, according to the press release.　　Reporting directly to Tan, Lee will oversee advanced packaging, system integration, back-end technology development, and manufacturing, as noted by the company. Intel said the appointment is aimed at strengthening its system-level innovation capabilities and supporting the next phase of its foundry expansion.　　Tan also underscored Lee’s pivotal role in advancing Intel’s next-generation packaging strategy.“As we prepare to scale advanced packaging technologies, including EMIB-T and HBI, for high-volume production, Seok-Hee is the ideal leader to drive the growth of this strategically important business,” Tan said.　　The appointment, as Reuters points out, comes after U.S. President Donald Trump announced earlier that Apple had agreed to collaborate with Intel on designing and manufacturing chips in the United States, providing a potential boost to Intel’s foundry business.　　A previous Reuters report, citing The Information, also reported that Google has tapped Intel to manufacture more than 3 million TPUs in 2028, while NVIDIA is evaluating Intel’s 18A process and advanced packaging technologies for a next-generation multi-die GPU design.　　Meanwhile, Intel Foundry EVP Naga Chandrasekaran will continue reporting to CEO Lip-Bu Tan, overseeing front-end technology development and manufacturing as Intel accelerates the ramp of Intel 18A, Intel 14A and future process nodes. He will also retain responsibility for design enablement and customer-facing business operations, supporting Intel Foundry’s long-term growth.　　Intel’s Talent Offensive Continues　　Lee’s appointment marks the latest in a series of high-profile hires since Lip-Bu Tan took the helm at Intel. Reuters notes that the company bolstered its foundry ambitions in April by recruiting Samsung foundry veteran Shawn Han to support its contract manufacturing business.　　The hiring drive began earlier. In late 2025, Intel brought in former TSMC senior vice president Wei-Ren Lo as executive vice president overseeing manufacturing and packaging amid controversy surrounding alleged sub-2nm trade secrets. Intel said Lo’s return was part of its broader transformation effort, with the veteran executive bringing back nearly two decades of experience gained at Intel before joining TSMC.

Key word：

Intel

Release time：2026-06-22 10:51 reading：272 Continue reading>>

Trade news

Apple A22 Pro May Adopt 1.4nm in 2028; TSMC Remains Primary Supplier, Intel Reportedly Considered

　　Apple is expected to use TSMC’s 2nm for its A20 and A20 Pro chips, but industry discussions are already shifting to the A22 Pro and a potential move to 1.4nm. According to Bloomberg, Apple is expected to adopt a 1.4nm process for the A22 Pro, which is slated for high-end iPhone models in 2028. While TSMC is expected to remain Apple’s primary manufacturing partner, the report notes that the company is also evaluating Intel as a potential secondary production source.　　Based on the reported timeline, the A21 Pro is expected to remain on TSMC’s 2nm, potentially transitioning to the enhanced N2P variant, which offers incremental improvements over N2, according to Wccftech.　　Wccftech also notes that costs could rise significantly, with TSMC’s 1.4nm wafers estimated to cost around US$45,000 each. As a result, the report suggests that only the A22 Pro, rather than the standard A22, will be manufactured on the 1.4nm node.　　As noted by MacRumors, current rumors suggest Intel could manufacture lower-end chips for products such as the iPad and Mac. At the same time, Intel CEO Lip-Bu Tan is seeking to revive the company’s foundry business by focusing on leading-edge nodes. According to TechPowerUp, Intel expects its 14A node to enter risk production in 2028, followed by high-volume manufacturing in 2029.　　Beyond the possibility of Apple adopting TSMC’s 1.4nm node for its A22 chips, the company is reportedly preparing three major product launches for late 2027. According to 9to5Mac, citing Bloomberg, these include a 20th-anniversary iPhone featuring a nearly edge-to-edge display and curved glass that wraps around the sides, a second-generation foldable iPhone, and AirPods equipped with built-in cameras.　　TSMC’s A14 Roadmap Takes Shape　　TSMC has been accelerating construction of its 1.4nm fab at the Central Taiwan Science Park. According to Economic Daily News, foundation piling for the first phase has largely been completed, with progress reportedly ahead of schedule. Trial production could begin as early as 3Q27, with mass production targeted for the second half of 2028.　　Compared with N2, A14 is expected to deliver a 10–15% performance improvement at the same power level, or reduce power consumption by 25–30% at the same performance level, while increasing logic density by more than 20%, according to TSMC.

Key word：

Apple

Release time：2026-06-18 10:15 reading：543 Continue reading>>

Trade news

SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

　　Samsung announced the start of HBM4E sampling in late May and later unveiled an HBM5 mock-up for the first time at COMPUTEX 2026. Against this backdrop, rival SK hynix is also stepping up its next-generation HBM push, with South Korean media outlet Newsis reporting that the memory giant has secured positive results in HBM4E development and is nearing sample shipments to key customers.　　Notably, certain analysts cited by the report expect SK hynix to begin HBM4E sample shipments as early as this month, or by July at the latest. The company had previously guided that sampling would start in the second half of the year, suggesting the timeline is now being pulled forward, the report adds.　　As Newsis notes, next-generation HBM is highly customized for customers, and earlier sample shipments enable faster performance validation and optimization—ultimately translating into a strategic edge in securing final mass production orders.　　Beyond sampling timelines, broader supply and pricing dynamics are also shifting, which may give early movers key advantages. According to TrendForce, as the market enters 2Q26, negotiations between buyers and suppliers have shifted toward HBM4 supply agreements for 2027, which is expected to become the market’s mainstream project generation. The shift underscores how both Samsung and SK hynix are accelerating HBM4 and HBM4E development amid tightening market cycles.　　SK hynix HBM4E Specs Under Spotlight　　As highlighted by Newsis, SK hynix’s HBM4E is likely to be used in NVIDIA’s next-generation AI accelerator, Rubin Ultra, set for release next year. In line with this platform upgrade, TrendForce notes that NVIDIA’s Rubin Ultra is expected to further increase HBM capacity per GPU to 384GB.　　Against this backdrop of rising system-level requirements, HBM4E specifications are also being pushed higher across the stack. According to Newsis, SK hynix’s HBM4E core die is expected to adopt a 1c DRAM process node, compared with the 1b node used in HBM4. In addition, The Chosun Daily previously reported that the company is likely to use TSMC’s 3nm process for its HBM4E logic die, aiming to challenge Samsung’s 4nm design.　　On the competitive front, Samsung Electronics completed the world’s first shipment of HBM4E samples in late May, supplying them to NVIDIA, according to Yonhap News.　　Samsung’s HBM4E combines a 1c DRAM core die with a 4nm foundry-based base die, delivering speeds of up to 14Gbps per pin and peaking at 16Gbps, equivalent to a maximum bandwidth of 4TB/s, the report notes.

Key word：

SK hynix

Release time：2026-06-16 10:43 reading：439 Continue reading>>

model	brand	Quote
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
BP3621	ROHM Semiconductor
ESR03EZPJ151	ROHM Semiconductor

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