DENSO and ROHM Reach Basic Agreement to Establish a Strategic Partnership in the Semiconductor Field
  DENSO CORPORATION and ROHM Co., Ltd. are pleased to announce that the two companies have reached a basic agreement to establish a strategic partnership in the semiconductor field. This agreement follows discussions and considerations that began in September 2024.  Recently, the importance of semiconductors that support the electrification and intelligence of vehicles has been increasing significantly. This is driven by the development and spread of electric vehicles aimed at achieving carbon neutrality, as well as the realization of automated driving, which is expected to contribute to zero fatalities in traffic accidents.  DENSO and ROHM have a long-standing collaboration in the trade and development of automotive semiconductors. Going forward, both companies will integrate DENSO's advanced system construction capabilities in the automotive sector with ROHM's cutting-edge semiconductor technology, cultivated in the consumer market. This partnership will focus on enhancing the lineup of high-quality devices, particularly analog ICs, that support vehicle electrification and intelligence, and deepening collaboration in development. Additionally, in highly compatible fields within their semiconductor businesses, both companies will discuss broad collaboration. By globally supplying products created through this co-creation, both companies aim to contribute to technological innovation in the automotive field and realize a sustainable mobility society.  To further solidify this partnership, DENSO and ROHM will continue to consider strengthening their capital relationship.  DENSO CORPORATION President & CEO, Shinnosuke Hayashi  DENSO positions semiconductors as key devices to realize next-generation vehicle systems and has been deepening its cooperative relationships with semiconductor manufacturers that possess rich experience and knowledge. ROHM has a wide range of semiconductor lineups that are crucial for automotive electronics products, essential for vehicle intelligence and electrification. We are very pleased that the partnership with ROHM is progressing smoothly. By further deepening the collaboration between both companies and integrating DENSO's accumulated automotive technology and expertise, we believe we can contribute to the development of the mobility society through stable supply and enhanced product value.  ROHM Co., Ltd. President (Representative Director), Katsumi Azuma  We are very pleased to deepen our collaborative relationship with DENSO, a leader in technological innovation for the mobility society. This partnership not only strengthens our relationship as suppliers but also envisions broad collaboration in the semiconductor business of both companies. Initially, we will focus on the development of analog ICs related to next-generation systems such as electrification, automated driving, and connected vehicles. Furthermore, without narrowing the scope, we will integrate our respective technologies, knowledge, and assets across a wide range of fields to contribute to technological innovation and stable supply in the automotive industry.
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Release time:2025-05-13 15:12 reading:559 Continue reading>>
Renesas Unveils Complete Lithium-Ion Battery Management Platform with Pre-Validated Firmware
  Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced all-in-one solutions for managing lithium-ion battery packs in a wide range of battery-powered consumer products, such as e-bikes, vacuum cleaners, robotics and drones. With pre-validated firmware provided, the R-BMS F (Ready Battery Management System with Fixed Firmware) will significantly reduce the learning curve for developers, enabling rapid designs of safe, power-efficient battery management systems.  Designed for lithium-ion batteries in both 2-4 and 3-10 cell series (S), R-BMS F solutions include Renesas’ industry-leading fuel gauge ICs (FGICs), an integrated microcontroller (MCU) and an analog battery front end, pre-programmed firmware, software, development tools and full documentation – all available in complete evaluation kits that are now ready to ship.  Pre-programmed Firmware to Simplify Development  Firmware is essential in battery management systems as it is used to monitor batteries’ state of charge (SoC), state of health (SoH), current, and temperature, as well as actively balancing the voltages of the individual cells, and detect faults. In some cases, however, consumer electronics developers may lack the highly specialized expertise needed to develop control algorithms that keep the batteries operating in a safe temperature region and ensure adequate battery life over many charge/discharge cycles.  Renesas’ R-BMS F solutions include built-in, pre-tested firmware designed to work with the FGIC’s on-board MCU. The firmware includes critical pre-programmed functions to maximize battery life and ensure safe operation. These include cell balancing, current control, and voltage and temperature monitoring. For added flexibility, the battery management system lets developers set many parameters to meet specific requirements and adjust the solution for different cell chemistries via a graphical user interface (GUI), without the need for a full integrated development environment (IDE).  “One of the biggest bottlenecks for designing advanced power management solutions is the complex task of firmware development and validation,” said Chris Allexandre, Senior Vice President and General Manager of Power at Renesas. “Not everyone has the expertise or in-house resources to write their own algorithms. Our all-in-one R-BMS F battery management system eliminates this process and provides market-ready power solutions that work without requiring specialized technical knowledge of MCU programming or advanced battery management design.”  All-Inclusive Evaluation Kits Ready to Ship  Both R-BMS F solutions contain a full evaluation kit, which has all the hardware, software, tools and documentation required to start developing. The underlying hardware powering the R-BMS F is Renesas’ FGIC solution, which combines an analog battery front end and an ultra-low-power RL78 MCU into a single, small package. The analog portion provides accurate measurements of cell voltage, current and temperature, as well as controlling the external MOSFETs and converting analog data to digital signals. The digital section is where synchronous functions reside, including the main CPU, clocks, timers and serial interfaces. Also included in the evaluation kits are: pre-programmed firmware stored in embedded flash memory with the flexibility to set the battery pack and cell chemistry parameters; the USB System Management Bus (SMBus) interface; GUI-based software; cables to communicate with the host system; dedicated development tools for parameter setting; and full documentation, including schematics and an engineering bill of materials (eBOM). With these resources, developers can confidently innovate intelligent power management systems that safely monitor battery usage and provide longevity, while reducing their impact on the environment. Renesas plans to include turn-key R-BMS F solutions in all future FGICs.  2-4 Cell Series Solution (RTK0EF0163DK0002BU)  The R-BMS F for 2 to 4S cell (~8V to 16V) solutions targets small vacuum cleaners, robotic vacuums, consumer and medical devices and runs on Renesas’ RAJ240055 Li-ion battery FGIC. Renesas offers Smart Robot Vacuum Cleaner | Renesas by combining this FGIC with other devices from its portfolio.  3-10 Cell Series Solution (RTK0EF0136DK0002BU)  The R-BMS F for 3 to 10S cell (~12V to 40V) solutions runs on Renesas RAJ240100 and RAJ240090 Li-ion battery FGICs, with target applications including e-bikes, e-mobility, vacuum cleaners, robotics, drones and industrial, consumer and medical systems.  Renesas has combined these FGICs with other devices from its portfolio to offer Wall to Battery Low Power Energy Storage System and USB-PD All in One Battery and Charging Solution. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.  Availability  Both R-BMS F solutions are available today in production volumes.
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Release time:2025-05-08 13:23 reading:779 Continue reading>>
Murata Unveils High-Efficiency 1W DC-DC Converter with Reinforced Isolation and Ultra- low Capacitance
  Murata Manufacturing has launched the NXJ1T series, a high-performance 1W DC-DC converter designed to provide reinforced isolation for communication interfaces and analog front-end (AFE) measurement circuits. With 4.2kVDC isolation (Hi Pot Test) and compliance with UL62368 safety standards, the NXJ1T series delivers exceptional electrical isolation, noise immunity, and thermal reliability for industrial, energy, and medical applications.  As industries transition to higher voltage systems, particularly in 800V electric vehicles (EV) and supporting chargers, battery energy storage (BESS), and renewable energy infrastructure, the need for robust isolation in communication and sensing systems has become increasingly critical. Furthermore, in medical applications, where low leakage current and safety isolation are essential, reliable power solutions must also meet stringent regulatory requirements like ANSI/AAMI ES60601-1.  Murata’s NXJ1T series addresses these challenges, offering a compact (10.55mm x 13.70mm x 4.04mm), high-performance DC-DC converter engineered for safety and durability in the most demanding environments. It features an unregulated 1W 5V input to 5V/200mA output design, ideal for embedded systems. Murata's proprietary molding technology provides the NXJ1T series with high ingress protection against dust and particulates in harsh industrial environments and extreme temperatures. During development, the DC-DC converter has successfully undergone 1,000 temperature cycles between -40°C and 125°C, demonstrating its ability to withstand the highest levels of thermal stress.  Manufactured in the UK, the NXJ1T incorporates Murata’s proprietary block-coil transformer technology, providing high isolation, low leakage current, and exceptional performance. In contrast to many alternative solutions on the market, which utilize wireless power coils that exhibit low coupling factors, high switching frequencies (approximately 10 MHz), and low efficiencies of typically around 40-60%, Murata's block-coil transformer technology facilitates lower switching frequencies (500 kHz–2 MHz) and higher efficiencies of approximately 80%. The result is exceptional common mode transient immunity (CMTI) and significantly lower isolation capacitance, making the NXJ1T series an ideal choice for engineers requiring high-performance power isolation in electrically noisy environments.  Each device features UL62368 recognition including reinforced insulation to 200Vrms and basic insulation to 250Vrms, providing an added layer of protection in high-voltage environments, while the under-voltage lockout (UVLO) functionality enhances operational stability, preventing erratic behavior under fluctuating power conditions. Furthermore, in medical equipment, where low leakage current is critical for patient-connected applications, the NXJ1T’s ultra-low isolation capacitance helps minimize unwanted leakage, supporting compliance with stringent safety standards like IEC 60601-1 when used within a certified system.  With a standard industry pin out and compact surface mount device (SMD) package, the NXJ1T provides seamless system integration into applications such as CAN Bus systems in EV chargers, heavy industrial automation systems, and medical instrumentation including X-ray, laser, ultrasound, and surgical instrumentation. In these high-voltage deployments, the DC-DC converters can deliver long-term stability and safety in high-voltage applications.  “As power system voltages continue to rise across industrial, and medical sectors, engineers require robust isolation solutions that can withstand demanding environments while maintaining efficiency,” said Ann-Marie Bayliss, Product Manager at Murata. She continued, “With its advanced transformer technology, the NXJ1T series delivers class-leading isolation, ultra-low leakage current, and high reliability, helping designers create safer and more efficient systems across a wide range of applications.”
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Release time:2025-05-07 14:48 reading:643 Continue reading>>
Renesas Debuts New Group in Popular RA0 Series with Best-in-Class Power Consumption and Extended Temperature Range
  Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA0E2 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new, cost-competitive devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features.  Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. RA0E1 devices have already been adopted in consumer electronics, appliance and white goods, power tools, industrial monitoring and other applications.  RA0E2 MCUs are fully compatible with RA0E1 devices, offering pin-expansion while maintaining the same peripherals and ultra-low power. This compatibility lets customers re-use existing software assets. The new devices deliver industry-leading power consumption of only 2.8mA current in active mode, and 0.89 mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA.  Renesas’ RA0E1 and RA0E2 ultra-low power MCUs deliver an ideal solution for battery-operated consumer electronics devices, small appliances, industrial system control and building automation application.  Feature Set Optimized for Low Cost  The RA0E2 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0 MCUs also integrate timers, serial communications, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 5mm x 5mm 32-lead QFN.  In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to avoid costly and time-consuming “trimming,” even after the reflow process.  “The market reception for our RA0 Series has exceeded even our own high expectations,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “The RA0E2 Group MCUs deliver the same ultra-low power and price point that have been so popular with our customers. The addition of extended temperature range and more memory opens up even more applications and use cases. We plan to further expand the RA0 product lineup, delivering optimal solutions for 8-16 bit MCU users transitioning to 32-bit MCUs.”  Key Features of the RA0E2 Group MCUs  Core: 32MHz Arm Cortex-M23  Memory: Up to 128KB integrated Code Flash memory and 16KB SRAM  Extended Temperature Range: Ta -40°C to 125°C  Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC  Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs  Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage  Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection  Security: Unique ID, TRNG, AES libraries, Flash read protection  Packages: 32- and 48-lead QFNs, 32-, 48-, and 64-pin LQFP  The new RA0E2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of RA0E1 designs to larger RA0E2 devices if customers wish to do so.  Availability  The RA0E2 Group MCUs are available now, along with the FSP software and the RA0E2 Fast Prototyping Board. Samples and kits can be ordered either on the Renesas website or through distributors. More information on the new MCUs is available at renesas.com/RA0E2.  Renesas MCU Leadership  The world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry’s most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit renesas.com/MCUs.
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Release time:2025-04-29 10:54 reading:843 Continue reading>>
Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System
  SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs inside its new large scale solar system “Sunny Central FLEX”, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies.  “ROHM’s new 2kV class SiC MOSFETs are designed to enable simple and highly efficient converter topologies for 1500V DC-links. It is developed with high reliability targets and cosmic radiation robustness – addressing the stringent conditions and extended converter lifetime requirements of the photovoltaic sector and beyond,” says Wolfram Harnack, President at ROHM Semiconductor GmbH. “The technology of our SiC device structure and integrated on-chip gate resistance eases device paralleling and simplifies high power module designs. The mass production has started,” adds Harnack.  Semikron Danfoss’ SEMITRANS® 20 has designed for high power applications and fast-switching operations, it represents the next generation of power modules for large converters. SEMITRANS® 20 with ROHM’s 2kV SiC MOSFETs is an integral part of SMA’s Sunny Central FLEX. “Semikron Danfoss and ROHM have collaborated for over a decade, focusing primarily on the implementation of silicon carbide (SiC) in power modules. More recently, we have teamed up to integrate silicon IGBTs as well”, says Peter Sontheimer, Senior Vice President of Semikron Danfoss’ Industry division.  “The new SEMITRANS® 20 offers simple, efficient solutions for 1500VDC applications. These modules are ideal for solar and energy storage inverters. Upcoming high-power electric truck chargers, as well as wind converters, will also benefit,” adds Sontheimer.  "The cooperation between SMA, Semikron Danfoss and ROHM is proof of how the seamless integration of innovative technologies creates the conditions for future-oriented energy projects," said Bernd Gessner, Product Manager Power Conversion Systems at SMA. "The demands on these solutions are higher than ever. SMA has decades of expertise and fulfills the highest requirements in terms of performance, reliability, durability and flexibility. The fact that Sunny Central FLEX meets these highest future-proof standards is also the result of the excellent cooperation with our partners who share the same commitment to excellence."  About SMA Solar Technology AG        As a leading global specialist in photovoltaic and storage system technology, the SMA Group is setting the standards today for the decentralized and renewable energy supply of tomorrow. SMA’s portfolio contains a wide range of efficient PV and battery inverters, holistic system solutions for PV and battery-storage systems of all power classes, intelligent energy management systems and charging solutions for electric vehicles and power-to-gas applications. Digital energy services as well as extensive services round off SMA’s range. SMA inverters installed throughout the world within the last 20 years with a total output of approximately 144 GW help avoid the emission of more than 64 million tons of CO2. SMA’s multi-award-winning technology is protected by more than 1,600 patents and utility models. Since 2008, the Group’s parent company, SMA Solar Technology AG, has been listed on the Prime Standard of the Frankfurt Stock Exchange (S92) and is listed on the SDAX index.  About Semikron Danfoss        Semikron Danfoss is a global technology leader in power electronics. Our product offerings include semiconductor devices, power modules, stacks and systems. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainably and thus to significantly reduce overall CO2 emissions – facing one of the biggest challenges today. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity and service to deliver best-in-industry performance and for a sustainable future. Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. We employ more than 3,500 people in 28 locations across the world. Our global footprint with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the United States ensures an unmatched service for our customers and partners. We offer more than 90 years of combined expertise in power module packaging, innovation and customer applications – making us the ultimate partner in power electronics.
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Release time:2025-04-29 10:49 reading:750 Continue reading>>
GigaDevice's GD5F1GM9 Series High-Speed QSPI NAND Flash Sets New Benchmark with Breakthrough Read Speeds for Accelerated Application Startup
  GigaDevice, a leading semiconductor company specializing in Flash Memory, 32-bit Microcontrollers (MCUs), Sensors, Analog products and solutions, announces the launch of its GD5F1GM9 high-speed QSPI NAND Flash, which features breakthrough read speeds and innovative Bad Block Management (BBM) functionality.  The GD5F1GM9 series combines the high-speed read performance of NOR Flash with the large capacity and cost-effectiveness of NAND Flash. These innovations address key industry challenges of slow response times and vulnerability to bad block interference associated with traditional SPI NAND Flash. The GD51GM9 launch will open new growth opportunities for SPI NAND Flash, making it the ideal choice for fast-boot applications in sectors such as security, industrial, and IoT.  The GD5F1GM9 series high-speed QSPI NAND Flash is built on a 24nm process node. The series supports both 3V and 1.8V operating voltages as well as high-speed read modes including Continuous Read, Cache Read, and Auto Load Next Page. Continuous Read and Auto Load Next Page modes are newer read features added on this series, offering users versatile read options to further accelerate code and data fetch. These read modes utilize the new parallel computation approach for its ECC (Error Correction Code) design, replacing the previous serial computation method. This innovation significantly reduces the calculation time for the built-in ECC.  The 3V version of the series achieves a continuous read rate of up to 83MB/s in Continuous Read mode, operating at a maximum clock frequency of 166MHz. The 1.8V version has a continuous read rate of up to 66MB/s and supports a maximum clock frequency of 133MHz. The results in GD5F1GM9’s read speeds are up to 3 times faster than traditional SPI NAND products at the same frequency. These design advantages improve data access throughput, reduce system boot time, and lower overall system power consumption.  As bad blocks from the factory are inherent issues in NAND Flash, the GD5F1GM9 incorporates an on-chip Advanced Bad Block Management (BBM) to ensure comprehensive functionality of Continuous Read mode. Continuous Read allows read access of the full memory array with a single Read command in aid of the executed BBM that link bad block addresses to good block addresses. Read access will then automatically skip the bad block due to the established link access to the remap and linked good physical block address.  From the factory, the GD5F1GM9 series guarantees the first 256 blocks are good blocks. While there will be bad blocks from the factory and possible new bad blocks may arise during usage that needs to be managed, the BBM feature can create a logical block address to the physical block address link, allowing users to swap and replace bad blocks and the associated access will be on a good block once the BBM link is setup.  The device can support up to 20 Look Up Table BBM Links to further compliment Continuous Read mode functionality. This not only significantly improves resource utilization but also simplifies system design.  “Currently, the generally slow read speed of SPI NAND Flash has become a major bottleneck in enhancing boot performance of key applications,” said Ruwei Su, GigaDevice vice president and general manager of Flash BU, "The launch of GD5F1GM9 series high-speed QSPI NAND Flash sets a new performance benchmark in the market. This series effectively addresses the read speed limitations of traditional SPI NAND Flash and offers a new solution for bad block management, making it an ideal alternative for NOR Flash users with growing capacity needs. In the future, GigaDevice will continue to refine its underlying technologies to provide customers with more efficient and reliable storage solutions."  The GD5F1GM9 series offers 1Gb capacity with 3V/1.8V voltage options and supports WSON8 8x6mm, WSON8 6x5mm, and BGA24 (5×5 ball array) 5x5 ball package options. For detailed information and product pricing, please contact your local sales representative.  About GigaDevice  GigaDevice Semiconductor Inc. (SSE Stock Code 603986) is a global leading fabless supplier. The company was founded in April 2005 and headquartered in Beijing, China, with branch offices in many countries and regions worldwide, providing local support at customers' fingertips. Committed to building a complete ecosystem with four major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.gigadevice.com  *GigaDevice and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.
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Release time:2025-04-23 17:09 reading:1035 Continue reading>>
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
  ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.  The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.  Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.  To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.  The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.  All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.  Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.  Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.  Product Lineup  EcoMOS™ Brand  EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.  Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.  EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.  Application Examples  ・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies  ・AC-DC conversion circuits for 48V AI server power supplies  ・48V industrial equipment power supplies (i.e. fan motors)  Terminology  Low ON-Resistance (RDS(on))  The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.  SOA (Safe Operating Area) Tolerance  The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.  Power MOSFET  A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.  Hot-Swap Controller (HSC)  A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.  Inrush Current  A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
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Release time:2025-04-10 13:10 reading:800 Continue reading>>
BIWIN Spec Industrial-Grade Wide-Temperature eMMC Wins the Industrial Core
  Recently, the results of the 23rd Chinese Automation & Digitalization "New Quality Award" selection, hosted by gongkong®, were officially announced. BIWIN Spec, the industrial and automotive-grade storage brand under BIWIN, clinched the Industrial Core "New Quality" Award for its innovatively developed Industrial-Grade Wide-Temperature eMMC storage solution.  Backed by BIWIN’s technological expertise and competitive advantages in embedded storage sector, the award-winning TGE208/TGE218 series industrial-grade eMMCs are featured with industrial-grade controllers and NAND Flash, along with proprietary firmware architectures and in-house advanced packaging/testing and manufacturing processes, delivering exceptional performance, ultimate stability, and industrial-grade reliability.  Furthermore, the products are certified with over 200 rigorous validation tests through BIWIN’s automatic testing system, and also passed the HTOL and ELFR tests under JEDEC standards. Designed for consistent and stable operation in extreme environments, the products are widely applicable across diverse industrial scenarios, including smart security surveillance, data communication, industrial automation, rail transportation, smart power systems, smart healthcare, and IoT terminals.  In terms of technical specifications, the products strictly follow the eMMC5.1 standards, support the HS400 high speed mode (with data transfer rates up to 400MB/s), and deliver outstanding performance under industrial wide-temperature conditions ranging from -40℃ to +85℃. In addition, the pSLC firmware technical support is also enabled to enhance the capability for data retention, so as to meet the high-frequency read/write needs in industrial scenarios.  With aims to satisfy the 24/7 uninterrupted operation requirements of industrial equipment, the BIWIN eMMCs are also specifically built with five intelligent management functionalities: the Field Firmware Upgrade (FFU) for remote maintenance, Boot Partition for secure system loading, Replay Protected Memory Block (RPMB) for enhanced data security, idle data acceleration for optimized storage efficiency, and a health monitoring system equipped. Customers can monitor the storage unit’s operational status in real time through a customized interface and dynamically optimize adjustments based on specific application scenarios.  BIWIN has established stable and close partnerships with supply chain collaborators, providing customers with reliable supply assurances and comprehensive after-sales support throughout the product lifecycle. With years of technical R&D accumulation and an intelligent production and testing system, combined with tiered BOM (Bill of Materials) control and manufacturing process management, the products achieve higher reliability and sustained operational stability.
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Release time:2025-04-07 13:20 reading:1128 Continue reading>>
Commercialized high precision agricultural CO2 sensors with superior long-term stability
  Murata Manufacturing Co., Ltd. (hereinafter "Murata") has commercialized "IMG-CA0012-12" (hereinafter "this product"), a case and cable type CO2 sensor. This high precision product primarily connects to environment measurement equipment in agricultural greenhouses and stably measures CO2 concentration. Through linkage with photosynthesis accelerators, this product will contribute to improving crop quality and increasing yield. Additionally, it improves energy efficiency by injecting an optimal amount of CO2 at an optimal timing. Mass production and supply for this product has begun in Hakui Murata Manufacturing.  In the field of agriculture, increased yield and quality improvement per unit area are required since there is a reduction in yield and decline in quality due to global warming as well as a drop in agricultural worker population. Technology for accelerating crop photosynthesis using CO2 application is an effective means of addressing these challenges. Furthermore, due to the recent increase in energy costs, effective CO2 application based on environmental data measurements is crucial. As a result, high-precision CO2 sensors, which offer long-term stability, require no calibration, and are resistant to malfunction, play a crucial role in photosynthesis accelerator technology.  This product is equipped with an automatic calibration function that runs on our unique calibration curve algorithm and dual wavelength (for measurement and reference) NDIR*1. Therefore, atmospheric calibration is not required. This ensures high precision and long-term stability, making it maintenance-free. Furthermore, its case and cable type design enhances user handling and ease of installation.  *1NDIR: Non-Dispersive Infrared Absorption  Specifications  CO2 sensors were installed in greenhouses and were used for a year for tomato cultivation and 2 years for rose cultivation. After use, CO2 concentration characteristics and temperature characteristics were evaluated.  It was discovered that CO2 concentration differences were minimal even when they were used for a long period of time in actual fields.  CO2 concentration characteristics  Temperature characteristics
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Release time:2025-04-02 15:44 reading:666 Continue reading>>
ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry
  ROHM Co., Ltd. (ROHM) announced today that ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.  The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.  GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).  The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN™ series, including the 45W AC adapter (fast charger) "C4 Duo" produced by Innergie, a brand of Delta Electronics, Inc.  "GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology" said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry."  “As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC's expertise in semiconductor manufacturing with ROHM's proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”  About TSMC  TSMC pioneered the pure-play foundry business model when it was founded in 1987, and has been the world’s leading dedicated semiconductor foundry ever since. The Company supports a thriving ecosystem of global customers and partners with the industry’s leading process technologies and portfolio of design enablement solutions to unleash innovation for the global semiconductor industry. With global operations spanning Asia, Europe, and North America, TSMC serves as a committed corporate citizen around the world.          TSMC deployed 288 distinct process technologies, and manufactured 11,895 products for 528 customers in 2023 by providing broadest range of advanced, specialty and advanced packaging technology services. The Company is headquartered in Hsinchu, Taiwan.  EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time:2025-04-02 15:36 reading:655 Continue reading>>

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