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SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

　　Samsung announced the start of HBM4E sampling in late May and later unveiled an HBM5 mock-up for the first time at COMPUTEX 2026. Against this backdrop, rival SK hynix is also stepping up its next-generation HBM push, with South Korean media outlet Newsis reporting that the memory giant has secured positive results in HBM4E development and is nearing sample shipments to key customers.　　Notably, certain analysts cited by the report expect SK hynix to begin HBM4E sample shipments as early as this month, or by July at the latest. The company had previously guided that sampling would start in the second half of the year, suggesting the timeline is now being pulled forward, the report adds.　　As Newsis notes, next-generation HBM is highly customized for customers, and earlier sample shipments enable faster performance validation and optimization—ultimately translating into a strategic edge in securing final mass production orders.　　Beyond sampling timelines, broader supply and pricing dynamics are also shifting, which may give early movers key advantages. According to TrendForce, as the market enters 2Q26, negotiations between buyers and suppliers have shifted toward HBM4 supply agreements for 2027, which is expected to become the market’s mainstream project generation. The shift underscores how both Samsung and SK hynix are accelerating HBM4 and HBM4E development amid tightening market cycles.　　SK hynix HBM4E Specs Under Spotlight　　As highlighted by Newsis, SK hynix’s HBM4E is likely to be used in NVIDIA’s next-generation AI accelerator, Rubin Ultra, set for release next year. In line with this platform upgrade, TrendForce notes that NVIDIA’s Rubin Ultra is expected to further increase HBM capacity per GPU to 384GB.　　Against this backdrop of rising system-level requirements, HBM4E specifications are also being pushed higher across the stack. According to Newsis, SK hynix’s HBM4E core die is expected to adopt a 1c DRAM process node, compared with the 1b node used in HBM4. In addition, The Chosun Daily previously reported that the company is likely to use TSMC’s 3nm process for its HBM4E logic die, aiming to challenge Samsung’s 4nm design.　　On the competitive front, Samsung Electronics completed the world’s first shipment of HBM4E samples in late May, supplying them to NVIDIA, according to Yonhap News.　　Samsung’s HBM4E combines a 1c DRAM core die with a 4nm foundry-based base die, delivering speeds of up to 14Gbps per pin and peaking at 16Gbps, equivalent to a maximum bandwidth of 4TB/s, the report notes.

Key word：

SK hynix

Release time：2026-06-16 10:43 reading：378 Continue reading>>

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Tesla Elon Musk Discusses TeraFab at ASML Conference; Project Expected to Spur EUV Tool Orders

　　Elon Musk is expanding his ambitions beyond EVs, AI, and space technology with TeraFab, a large-scale semiconductor manufacturing project in Texas. According to CNBC, during an ASML conference on Thursday, Tesla CEO Elon Musk outlined his TeraFab vision. As the only provider of a crucial EUV machine, ASML is widely expected to become a key supplier for the Texas-based fabrication plant.　　Joining remotely at ASML’s annual technology conference, Musk took part in a fireside chat with CEO Christophe Fouquet. While the event was limited to employees, ASML confirmed Musk’s participation, the report states.　　ASML also signaled support for the initiative. As noted by Reuters, the company said that Musk and his team are becoming part of the broader semiconductor ecosystem and that many companies, including ASML, will collaborate on the project.　　For the project, SpaceX and its partner Tesla will invest an initial US$55 billion, with total investment potentially rising to US$119 billion if fully built out, as noted by Reuters.　　TeraFab Fuels Equipment Demand Across the Supply Chain　　In May, ASML CEO Christophe Fouquet said he had spoken directly with Elon Musk about the TeraFab semiconductor project, according to Tom’s Hardware, citing Reuters. While Fouquet did not disclose details of the discussions, he said projects such as TeraFab and Starlink are expected to place growing pressure on equipment suppliers’ capacity in the coming years.　　Maeil Business Newspaper also notes that expectations for a surge in equipment demand have risen after Musk discussed the TeraFab project at the ASML Technology Conference. The report adds that ASML’s core equipment is expected to be essential to the project.　　South Korean equipment makers are also seeking to capitalize on the opportunity. According to Seoul Economic Daily, Hanmi Semiconductor announced on June 12 that it will invest KRW 50 billion in SpaceX. The report says Hanmi aims to strengthen ties with SpaceX and position itself to supply key equipment for TeraFab.　　Interest in the project has been building for months. According to Bloomberg, Musk’s team had reportedly contacted major chip equipment suppliers, including Applied Materials, Tokyo Electron, and Lam Research, regarding the planned facility. Sources said staff working for the Tesla-SpaceX venture had requested pricing and delivery information for a range of semiconductor manufacturing tools.

Key word：

Elon Musk

Release time：2026-06-15 10:48 reading：369 Continue reading>>

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SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion

　　TrendForce　　SK hynix is reportedly preparing a major DRAM capacity expansion. According to The Elec, the company has shared plans with key suppliers to nearly double its DRAM wafer production capacity by 2030–2031 from current levels. The plan aligns with comments made by SK Group Chairman Chey Tae-won at Computex 2026, where he said the company would “double overall wafer production capacity within five years at full speed.”　　The report says SK hynix aims to raise monthly DRAM wafer capacity from about 550,000 wafers today to roughly 1 million wafers by 2030. The current figure includes around 200,000 wafers per month from its Wuxi fab in China.　　Much of the expansion will be centered on the Yongin Semiconductor Cluster. According to the report, SK hynix plans to divide its first Yongin fab into six cleanrooms and has moved up the first equipment installation schedule from May 2027 to February 2027. The fab is expected to add 360,000 wafers per month of DRAM capacity by the first half of 2030.　　SK hynix is also expanding its M15X fab in Cheongju. The report says the facility is scheduled to begin operations in the second half of 2026 with an initial capacity of 40,000 wafers per month, rising to about 80,000 wafers per month in 2027.　　Combined with the additional output from Yongin, SK hynix’s total DRAM wafer input capacity could approach 1 million wafers per month between 2030 and 2031, according to the report.　　Notably, all newly added capacity is currently designated for DRAM production, the report notes. For NAND flash, SK hynix is expected to focus on technology upgrades, such as increasing layer counts, rather than significant capacity expansion.　　Equipment Suppliers See Near-Term Gains, but Remain Cautious　　The expansion of the Yongin Semiconductor Cluster is drawing a growing number of semiconductor equipment and materials suppliers. According to iNews24, equipment and materials suppliers continue to move into the Yongin Semiconductor Cluster. South Korean materials, parts, and equipment firms, along with ASML, Lam Research, and Tokyo Electron Korea, have either relocated or are in the process of moving in.　　However, The Elec notes that suppliers remain cautious about execution given the scale and pace of the expansion plan. Supplier sources cited by the report said the increased investment is expected to provide a meaningful near-term boost for equipment and materials vendors, though achieving the full expansion target will ultimately depend on whether market demand remains strong enough to support it.　　Samsung Also Accelerating DRAM Expansion　　As for Samsung, according to Digital Daily, Samsung Electronics is accelerating DRAM capacity expansion at its P4 fab in Pyeongtaek by bringing forward its investment schedule. The report says Samsung’s DRAM investment next year could increase by roughly 10,000 wafers per month above previous estimates. Some industry observers also expect Samsung to begin issuing purchase orders for the P5 line from the second quarter of next year, potentially supporting investment equivalent to 150,000 wafers per month in 2027.

Key word：

SK hynix

Release time：2026-06-08 10:46 reading：531 Continue reading>>

Trade news

Intel Says 18A May Reach Strong Margins by 2027; Notebook Chips on the Node Mark Fastest Ramp in 5 Years

　　Intel is betting heavily on 18A to support the company’s turnaround plan. According to The Register, Chief Financial Officer David Zinsner said that early last year Intel faced the challenge of trying to improve both performance and yield at the same time. The company later shifted its focus to stabilizing performance first, and with that objective largely achieved, it is now concentrating on improving yield month by month.　　Zinsner said Intel’s goal is to achieve yield levels that support strong margins, adding that the company is currently ahead of schedule to reach that target by the end of 2027, as the report highlights. He added that after Lip-Bu Tan joined the company, Intel began sharing more manufacturing data with its vendors. The increased collaboration helped improve yields and made a dramatic difference.　　Looking beyond 18A, Zinsner also expressed confidence in Intel’s 14A. According to the report, he said the company has adopted a more aggressive approach than it did with 18A, adding that yield and performance metrics are currently ahead of where 18A was at the same stage of development.　　Intel 3 and 18A Supply Set to Rise Amid Strong CPU Demand　　In addition to providing an update on Intel’s manufacturing roadmap, Zinsner highlighted growing supply from Intel 3 and 18A, according to Seeking Alpha. As cited by the report, he said Intel expects a meaningful increase in supply from both Intel 3 and 18A over the coming quarters to meet rising demand. He added that 18A-based notebook processors are ramping quickly and represent the company’s fastest-ramping product launch in at least the past five years.　　The company is also seeing rising CPU demand. According to The Register, Zinsner said it remains difficult to predict the full extent of future growth, but he expects the market to be substantial. He said the key challenge at present is supply, adding that Intel sees sufficient demand in the market and should be able to grow data center revenue meaningfully if it executes successfully on planned supply ramps.

Key word：

Intel

Release time：2026-06-05 10:40 reading：478 Continue reading>>

Trade news

NVIDIA Enters PC Market with RTX Spark Featuring MediaTek-Co-Designed N1X CPU on TSMC 3nm

　　As traditional CPU leaders such as Intel push further into the AI accelerator market, NVIDIA is moving in the opposite direction—leveraging its dominance in AI computing to expand into the PC processor arena. At GTC Taipei on June 1, CEO Jensen Huang unveiled the NVIDIA RTX Spark, developed in partnership with Microsoft and powered by the new Arm-based N1X processor co-designed with MediaTek, according to NVIDIA and CNBC.　　According to CNBC, the initial rollout will include more than 30 notebook models and 10 desktop systems. RTX Spark-powered devices from Microsoft, Dell, HP, ASUS, Lenovo, and MSI are expected to debut this fall, marking NVIDIA’s first large-scale push into the Windows PC CPU market.　　CNBC adds that the platform combines NVIDIA’s Blackwell GPU architecture with the N1X CPU and 128GB of unified memory, bringing data center-class AI capabilities to personal computers. Notably, the new PC processor will be manufactured using TSMC’s 3nm process, which is currently produced exclusively in Taiwan, according to CNBC.　　More Spec Details　　Interestingly, as noted by The Verge, the flagship RTX Spark mirrors the DGX Spark almost exactly — 20 CPU cores, 6,144 GPU cores, 128GB of LPDDR5X memory — though NVIDIA plans to release leaner, more affordable variants, with some configurations dropping to just 16GB of RAM.　　Meanwhile, NVIDIA has provided additional details on the platform’s performance. According to The Verge, with up to 128GB of unified memory—on par with AMD’s previous-generation Strix Halo—RTX Spark laptops and desktops are also capable of hosting AI agents with up to 120 billion parameters, a capability Microsoft appears eager to integrate into Windows.　　Powered by RTX Spark, NVIDIA claims the system can render a 90GB 3D scene, edit 12K video, or run graphically intensive titles like Indiana Jones and the Great Circle at a smooth 100fps in 1440p—all within a 14mm-thin laptop operating without being plugged into power, the report adds.　　CNBC, citing an NVIDIA spokesperson, reports that RTX Spark is described as being “roughly equivalent” to the company’s flagship RTX 5070 laptop GPU.　　NVIDIA is certainly not the only player eyeing to expand its CPU footprint. As noted by CNBC, Apple now designs its own Arm-based processors for Mac computers, having rolled out a higher-end MacBook lineup powered by its latest M5 chips in March. In the same month, Arm unveiled its first in-house CPU, with Meta reportedly serving as the launch customer for the Arm AGI CPU, according to TechCrunch.

Key word：

NVIDIA

Release time：2026-06-02 10:29 reading：724 Continue reading>>

Trade news

Samsung Starts Shipping Industry-First HBM4E Samples 3 Months After HBM4 Ramp; Performance Up 20%+

　　Just months after rolling out HBM4 shipments in early 2026, Samsung has begun providing samples of the industry’s first 12-layer HBM4E to major global partners, according to the company’s latest press release.　　Given that HBM4 shares the same 1c DRAM process and 4nm base die architecture as HBM4E, and is already in mass production, industry observers suggest the newly shipped HBM4E samples are also well positioned to transition into mass production. Samsung adds that it plans to proceed with HBM4E mass production in line with client-specific timelines.　　Meanwhile, Samsung is also expanding mass production and supply of HBM4, which became the world’s first HBM4 to enter mass production and shipment in February. In December last year, Samsung’s HBM4 received top-tier evaluation after demonstrating an industry-leading 11.7Gbps speed in System-in-Package (SiP) testing, the final certification stage, the company adds.　　According to News1, the latest development makes Samsung the first to supply HBM4E. Industry observers cited by the report also noted that starting from HBM4, customer-specific design flexibility and stable large-scale supply capabilities will become even more critical. Against this backdrop, Samsung’s integrated strengths across memory, foundry, and advanced packaging are expected to stand out even more clearly, the report adds.　　HBM4E Upgrade with 20% Performance Boost, 30% Higher Capacity　　In terms of performance, Samsung notes that HBM4E marks a notable upgrade over the previous generation, offering a stable 14Gbps pin speed that can scale up to 16Gbps for more demanding AI workloads. Compared with HBM4, the new memory delivers over 20% higher performance and reaches bandwidth of up to 3.6TB/s per stack, significantly improving compute efficiency for large language models (LLMs) and next-generation AI systems.　　Additionally, Samsung’s 12-layer HBM4E is currently offered in a 48GB capacity, which is more than 30% higher than the previous generation. The company plans to expand the lineup to include 32GB (8-layer) and 64GB (16-layer) variants to better align with diverse customer requirements as well.　　From an efficiency standpoint, Samsung highlights that advanced low-power design techniques and an optimized packaging architecture have improved energy efficiency by 16% while reducing thermal resistance by more than 14% compared with the previous generation.　　HBM4E Progress Among Rivals　　Meanwhile, progress from SK hynix and Micron in HBM4E has come under closer market scrutiny following Samsung’s advances. According to Yonhap News Agency, SK hynix had initially planned to begin HBM4E sample shipments in the second half of this year, but recent reports indicate smoother-than-expected development progress, bringing forward its timeline.　　On the other hand, Micron said its first HBM4E product will follow JEDEC standards, with mass production ramp-up targeted for 2027, according to STOCK Analysis.

Key word：

Samsung

Release time：2026-05-29 10:18 reading：707 Continue reading>>

Trade news

Intel 18A Yields Up 7%–8% Monthly as 2H26 Customers Expected; Said to Push 18A CPUs Amid Shortages

　　Intel’s turnaround appears to be gaining momentum. According to CNBC, Intel CEO Lip-Bu Tan said the company’s foundry business is making progress, with 18A process yields now improving by 7% to 8% per month, signaling advancement from earlier challenges.　　More significantly, Tan said the improvements are beginning to attract customer interest, with Intel expecting commitments from multiple foundry customers in the second half of 2026, the report highlights. The remarks align with earlier comments from CFO David Zinsner, who said signals from external foundry customers would become “more concrete” in the second half of the year and into early 2027.　　Intel Reportedly Pushes 18A CPUs Amid Supply Tightness　　Recent CPU shortages have also brought renewed attention to Intel, which is reportedly promoting processors built on its 18A technology. According to Nikkei, sources say Intel is encouraging key PC partners across the U.S., China, and Taiwan to increase adoption of CPUs produced using the process, which only became available late last year.　　Sources add that the company has prioritized supply of chips based on its older Intel 7 process for server and industrial applications. Intel’s push to promote its most advanced chips comes as it seeks to capitalize on the AI race and regain leadership in advanced chipmaking, the report adds.　　14A Seen as Intel’s Next Push Against TSMC　　Beyond 18A, according to CNBC, Tan said Intel’s next-generation 14A process could eventually compete with TSMC, adding that it is expected to arrive around the same time as TSMC’s comparable technology — a development he described as a “major, major breakthrough.” As noted by Wccftech, Tan said Intel expects risk production for its 14A technology in 2028, followed by volume production in 2029, placing its timeline alongside TSMC’s. He added that multiple customers are already engaging with Intel as the company has made its 0.5 PDK available.　　EMIB Shows Early Customer Commitment as Substrate Prepayments Emerge　　Another major technology highlighted by Lip-Bu Tan is EMIB, which he described as one of the most advanced chip packaging technologies. According to Wccftech, Tan said customer commitment has become evident, with some customers even prepaying for substrates to secure supply amid ongoing shortages.　　Wccftech notes that EMIB was recently said to have reached 90% yields. By contrast, Commercial Times notes that TSMC’s CoWoS currently mass-produced 5.5-reticle-size version — the world’s largest today — has already achieved yields of 98%.

Key word：

Intel

Release time：2026-05-20 11:32 reading：757 Continue reading>>

Trade news

First Intel Wildcat Lake Laptops Near Launch; Reportedly Built on 18A, Taking Aim at Apple’s MacBook Neo

　　The first laptops powered by Intel’s “Wildcat Lake” Core Series 300 processors for the entry-level PC segment are reportedly nearing launch. According to Wccftech, Intel Core Series 3 laptops could hit retail shelves as early as next week, with initial models including 14-inch and 16-inch designs from Honor and ASUS, while more OEMs are expected to follow.　　Chinese media outlet Mydrivers notes that the Honor Notebook X14 2026 Combat Edition will be the first commercially available laptop based on Intel’s Wildcat Lake platform, featuring an Intel Core 5 320 processor. Another Wccftech report notes that the device comes with 16GB of LPDDR5X 7467 MT/s memory, double the capacity of Apple’s MacBook Neo, along with a 512GB SSD. By comparison, the Neo starts at 256GB of storage and tops out at 512GB.　　Intel’s Wildcat Lake Targets AI PCs With Better Battery Life　　The SoC package integrates two dies, with the primary die built on Intel’s 18A node, according to TechPowerUp. This die features a 6-core CPU configuration, NPU 5 delivering 40 TOPS of INT8 performance, and a GPU with up to two Xe3 cores. It also integrates the memory controller and cache pool. Meanwhile, Intel dedicates the second die to I/O functions, the report adds.　　Wccftech notes that Intel’s Core Series 3 emphasizes AI capability and battery efficiency, marking the company’s first hybrid AI-ready Core Series processor. The report adds that the chips are designed for all-day battery life and everyday productivity, offering up to 2.1 times faster creation and productivity performance, up to 64% lower processor power consumption, and up to 2.7 times higher AI GPU performance compared with previous-generation Intel Core 7 150U processors.　　Looking ahead, Wildcat Lake could see broader adoption across future devices. TechPowerUp reports that Google is likely to pair its rumored “Googlebook” laptops with Intel’s latest Core Series 300 “Wildcat Lake” processors. However, Intel is not expected to be the exclusive platform provider, with Qualcomm and MediaTek also said to be among Google’s partners.

Key word：

Intel Wildcat Lake

Release time：2026-05-19 10:42 reading：879 Continue reading>>

Trade news

YC Chem Reportedly First to Supply Glass Substrate Photoresists; Customer Eyes Year-End Mass Production

　　South Korea’s YC Chem has reportedly become the first in the industry to supply photoresists for glass substrates. According to The Elec, sources say the company is supplying i-line photoresist, stripper, and developer materials for glass substrates to a customer after receiving a purchase order (PO) following qualification tests.　　As supply of related materials begins to ramp up, commercialization of glass substrates also appears to be drawing closer, the report notes. Current shipments are intended for the customer’s prototype production, with material supply volumes expected to increase gradually as the customer moves toward mass production from the end of this year.　　The company is also seeking additional customers. According to the report, it is currently in discussions with more than three companies regarding the supply of glass substrate materials. With some firms, sample testing is underway for negative photoresists and glass substrate coating materials.　　YC Chem has also supplied prototype coating materials for glass substrates to customers. These materials are intended to minimize cracking and warpage caused by differences in thermal expansion coefficients (CTE) and thermal conductivity between glass and copper. According to the report, the products are currently undergoing qualification testing.　　The report notes that the coating materials are used in embedding-type glass substrates, which integrate circuits and passive components directly within the glass substrate itself.　　Key Requirements for Photoresists in Glass Substrate Manufacturing　　As the report points out, the glass substrate photoresist supplied by YC Chem is based on i-line technology, which uses a 365-nanometer (nm) mercury lamp wavelength in the lithography process. Notably, the report points out that, unlike extreme ultraviolet (EUV) photoresists used in advanced semiconductor manufacturing, glass substrate production places greater emphasis on thicker film thickness and strong etch resistance.　　In particular, the report states that through-glass via (TGV) processes require strong chemical durability and high etch resistance during hole formation and copper plating. As a result, demand is increasing for longer-wavelength lithography materials such as i-line and krypton fluoride (KrF)-based photoresists.　　In South Korea, Samyang NC Chem is also developing photoresist materials for glass substrates. The report adds that the company has supplied samples to more than two customers and is reportedly aiming for mass production next year.　　As major companies accelerate glass substrate development, securing stable material supplies is becoming increasingly important. A January Chosun Biz report said Absolics is diversifying suppliers by adding a domestic partner for glass substrate photoresists, reducing reliance on Japan’s TOK, while also reviewing process dualization for TGV and plating processes through additional collaborators.

Key word：

YC Chem

Release time：2026-05-18 13:05 reading：841 Continue reading>>

Trade news

Samsung Reportedly Develops Mobile HBM Packaging With Copper Pillars, Bandwidth Up 15%–30%

　　Samsung Electronics is reportedly developing a next-generation HBM packaging technology aimed at bringing high-performance on-device AI to mobile devices. According to ETNews, sources say the company is working on a “Multi Stacked FOWLP” technology that combines ultra-high-aspect-ratio copper pillars with FOWLP (Fan-Out Wafer Level Packaging) by advancing its existing VCS (Vertical Cu-post Stack) technology.　　The report notes that traditional mobile memory (LPDDR) packaging still relies on copper wire bonding. However, the technology is limited to roughly 128 to 256 I/O terminals, while also suffering from higher signal loss and lower thermal and power efficiency. To address these constraints, Samsung previously introduced its VCS (Vertical Cu-post Stack) technology, which arranges DRAM dies in a staircase-style stacked structure connected by copper pillars. The newly reported technology is viewed as a further evolution of this approach through the adoption of ultra-high-aspect-ratio copper pillars.　　More specifically, Samsung has increased the aspect ratio of copper pillars used in VCS packaging from 3–5:1 to 15–20:1, significantly boosting bandwidth, the report notes. However, copper pillars thinner than 10 micrometers become more vulnerable to bending and breakage. To address this issue, Samsung reportedly combined the design with an FOWLP process, which molds the chip and extends wiring outward to help support the copper pillars.　　The approach could enable more I/O terminals within the same area, potentially boosting bandwidth by 15% to 30% while increasing memory stack capacity by more than 1.5 times, the report adds.　　Commercialization Timeline Remains Unclear　　Meanwhile, the technology is still under development, making the timeline for mass production and commercialization unclear. However, the report says industry observers believe it could be adopted as early as a later version of the Exynos 2800 or the Exynos 2900.　　Notably, some industry observers said mobile HBM development and commercialization could progress more slowly than initially expected, as demand for HBM in servers, data centers, and AI accelerators is expected to remain strong for the foreseeable future. The report adds that booming demand for server and data center HBM may make it difficult for Samsung to fully concentrate its resources on mobile HBM development.　　SK hynix Advances Mobile AI Packaging　　SK hynix is also accelerating development of semiconductor packaging technologies for smartphones and Extended Reality (XR) devices. According to a Hankyung report published earlier this year, sources say the company is developing “High Bandwidth Storage (HBS),” a packaging solution that vertically stacks low-power (LPDDR) DRAM and NAND flash memory beside the Application Processor (AP), which handles core computing tasks in IT devices.　　Hankyung notes that HBS adopts a packaging technology called “Vertical Fan-Out” (VFO). Unlike conventional wire bonding, which connects stacked memory and substrates with thin copper wires, VFO uses pillar-shaped interconnects to enable denser wiring and faster data transfer speeds, helping APs process rapidly growing AI-driven workloads.

Key word：

Samsung

Release time：2026-05-15 10:49 reading：967 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
TL431ACLPR	Texas Instruments
CDZVT2R20B	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
TPS63050YFFR	Texas Instruments

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