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TSMC Hints at Potential Further U.S. Expansion; Industry Sources Reportedly See Up to US$250B Investment

　　As TSMC continues expanding its U.S. footprint, comments from Cliff Hou, TSMC Senior Vice President and Deputy Co-COO, have caught industry attention. According to Commercial Times, Hou said at the 2026 SelectUSA Investment Summit that the company “is prepared for growth from any new business opportunities,” remarks the market has interpreted as signaling potential further expansion of TSMC’s U.S. investments. TSMC’s total U.S. investment currently stands at US$165 billion.　　Commercial Times notes that supply chain developments show chip equipment suppliers have also begun establishing U.S. subsidiaries to support TSMC. Industry sources added that TSMC’s total U.S. investment could reach as much as US$250 billion, with the company expected to replicate the Hsinchu Science Park cluster model in Phoenix.　　Meanwhile, Economic Daily News reported that TSMC’s first Arizona fab entered mass production in 4Q24, while its second fab has already been completed and is expected to begin 3nm mass production in the second half of 2027. TSMC previously said construction of its third Arizona fab is already underway, while permits are being sought for a fourth fab and its first advanced packaging facility in the state. The report also noted that TSMC has acquired a second large parcel of land near its existing Arizona site to support future expansion plans.　　Although TSMC’s U.S. fabs are more costly, capacity remains in strong demand, with previous reports indicating that customers had already reserved capacity at all four Arizona fabs, as noted by Economic Daily News. Institutional investors said that, for process technologies below 2nm, TSMC’s related capacity ratio between Taiwan and the U.S. is expected to reach roughly 7:3 by 2030.　　TSMC Reshapes Board Amid Global Expansion　　In addition, TSMC has also recently adjusted its board structure. According to Commercial Times, the company plans to revise its corporate charter by increasing the number of board seats from the current seven to ten directors to nine to twelve, with the proposal set to be discussed at the shareholders’ meeting on June 4.　　The move reflects TSMC’s response to the rapidly changing global business environment and is intended to provide greater flexibility in recruiting directors from diverse professional backgrounds, the report said. It also noted that, as TSMC rapidly expands overseas and continues increasing its U.S. investments, the board will need more members with expertise in international supply chains, geopolitics, and U.S. policy.

Key word：

TSMC

Release time：2026-05-07 13:22 reading：114 Continue reading>>

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Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification

　　Apple is reportedly weighing the possibility of having some of its core device chips manufactured by Samsung and Intel. According to Bloomberg, citing sources, the company has held preliminary discussions on using the two as alternative production partners for its main processors—potentially providing a second sourcing option alongside its longstanding supplier, TSMC.　　Sources say the company has held early-stage discussions with Intel about leveraging its foundry services, while Apple executives have also visited a Samsung facility under construction in Texas that is expected to produce advanced chips.　　That said, the report notes that neither effort has led to any orders so far. Engagements with both suppliers remain at a preliminary stage, as Apple continues to have reservations about adopting non-TSMC manufacturing technologies.　　One of the key drivers behind Apple’s potential shift is supply constraints at TSMC, according to Bloomberg. As the report notes, Apple executives addressed the issue during the company’s quarterly earnings call last week, indicating that limited chip availability for iPhone and Mac devices is currently weighing on growth.　　In early 2026, Tim Cook identified access to advanced-node manufacturing as the main bottleneck for Apple’s iPhone output, according to CNBC. He noted that production is constrained by limited capacity for the company’s A-series and M-series system-on-chip (SoC) chips, which are fabricated on TSMC’s 3nm process.　　In addition, it also aims to maintain at least two suppliers for key components, allowing Apple to strengthen its negotiating leverage on pricing while reducing the risk of supply disruptions, Bloomberg adds.　　Apple’s Reported Supplier Talks May Open Door for Intel Comeback, Samsung Gains　　Apple’s talks with both companies reportedly began before the most recent supply constraints emerged. As Bloomberg notes, collaborating with Intel could offer an added advantage, potentially strengthening Apple’s ties with the Donald Trump administration. As for Samsung, the report indicates that it has already been working on supplying more peripheral components for Apple’s devices, including power management parts.　　In an August 2025 press release, Apple also announced a partnership with Samsung to co-develop a new chip manufacturing technology at Samsung’s Austin fab. Citing industry sources, Business Korea adds that the chip Samsung is expected to produce will likely be used as an image sensor in future iPhones and other Apple products.　　Separately, industry momentum appears to be building around Intel’s foundry push. According to Commercial Times, major tech firms including Google and Apple are weighing a shift to Intel’s foundry. The report adds that Apple’s M-series chips are evaluating Intel’s 18A-P node.　　Apple’s potential shift could provide a boost to both Samsung and Intel. As the report notes, securing external customers for its foundry business is central to Intel’s turnaround strategy under CEO Lip-Bu Tan. Winning Apple as a client would mark a major milestone for Tan and could help draw in additional business. Samsung, meanwhile, would also stand to gain significantly from an endorsement by Apple.

Key word：

Apple

Release time：2026-05-06 14:44 reading：153 Continue reading>>

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ROHM Launches an Ultra-Compact Wireless Power Chipset for Wearables

　　ROHM has developed a wireless power supply IC chipset consisting of the receiver - ML7670 - and transmitter - ML7671 - compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands as well as peripheral devices like smart pens.　　The smart ring market has seen rapid growth in recent years, primarily in healthcare and fitness applications. However, for extremely small ring-shaped devices worn on the finger, wired charging is impractical, while conventional Qi wireless charging standard is difficult to implement due to constraints such as coil size. This has driven increased demand for a proximity-based power transfer method capable of reliably charging ultra-compact devices.　　In response, NFC-based charging, which operates at the high-frequency 13.56MHz band that enables antenna miniaturization, is attracting increased attention, with adoption accelerating in next-generation wearables. Following the successful commercialization of the 1W ML7660/ML7661, ROHM has developed the ML7670/ML7671 chipset optimized for even smaller devices.　　This new chipset builds on the proven receiver - ML7660 - and transmitter - ML7661. The maximum power transfer is specified at 250mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The result is a solution optimized for both mounting area and power transfer efficiency in the power class demanded by compact wearable devices, especially smart rings.　　The ML7670 power receiver IC achieves a maximum power transfer efficiency of 45% in the 250mW low output range – all in an industry-leading form factor of just 2.28 × 2.56 × 0.48mm. A key feature of the new chipset is superior performance that surpasses the efficiency of comparable products in the same class by optimizing elements such as coil matching, rectifier circuitry, and reduced losses in switching devices.　　What's more, all firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. This significantly reduces board space along with development workload in device design.　　Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices, positioning the chipset as a core element in the expanding NFC wireless power ecosystem.　　The new chipset is already in mass production. Furthermore, it has been adopted in SOXAI RING 2, the latest model launched on December 10th, 2025, by SOXAI, Inc. (“SOXAI” is pronounced “SOK-sai”.), the Japanese developer and distributor of the original sleep monitoring ring SOXAI RING. Evaluation boards and reference designs are also offered to facilitate integration. For more information, please contact a sales representative or submit an inquiry via the contact page on ROHM’s website.　　Going forward, ROHM will continue to promote device development that leverages miniaturization and low-power consumption technologies essential for wearable devices, contributing to improved user convenience and the continued growth of the wearable market.　　Specifications　　Case Study: SOXAI RING 2 Adoption Example SOXAI RING is the only smart ring for sleep management developed in Japan capable of accurately capturing and analyzing sleep data. It incorporates cutting-edge technologies such as an optical vital sensor, temperature sensor, accelerometer, Bluetooth® Low Energy communication, and NFC wireless charging functionality.　　The latest model, SOXAI RING 2, is equipped with Deep Sensing™, a proprietary photoplethysmography (PPG) sensor that significantly improves measurement accuracy, enabling the visualization of physical health changes with far greater depth and precision.　　Bluetooth® is a registered trademark of Bluetooth SIG, Inc. in the US.　　Deep Sensing™ is a trademark or registered trademark of SOXAI, Inc.

Key word：

ROHM

Release time：2026-04-29 10:03 reading：271 Continue reading>>

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MicroLED Gains Focus as Seoul Semiconductor Plans $180M AR Investment, Aledia Reports Breakthrough

　　Amid mounting margin pressure and slowing growth in the LED industry, players are moving beyond traditional segments in search of new momentum, with MicroLED emerging as a key focus. According to MicroLED-info, Seoul Semiconductor plans to invest KRW 250 billion (around $180 million) over the next five years, primarily in the R&D and production of microLED microdisplay modules for AR applications.　　The report suggests that the company has embarked on a government-approved restructuring plan as its core LED package business faces mounting pressure from falling prices and weakening profitability. Under the initiative, the new displays will be built on Seoul Semiconductor’s proprietary WICOP (Wafer Integrated Chip on PCB) technology, the report adds.　　As noted by Maeil Ilbo, founded in 1992, Seoul Semiconductor supplies LED packages across lighting, automotive, and IT, and holds about a 4.8% global share in the optoelectronics market. Despite its proprietary wire-free WICOP technology, the company has come under pressure from persistent price declines and softer demand, weighing on margins, the report explains.　　French MicroLED Startup Achieves Key Milestone　　On the other hand, French startup Aledia, according to MicroLED-info, has successfully demonstrated a fully functional monolithic RGB epitaxial wafer, marking a key milestone for the technology. The achievement validates the company’s end-to-end monolithic RGB process, enabling red, green, and blue emission from a single epi wafer fabricated in a single run, the report notes.　　According to the company, its proprietary nanowire-based architecture can grow nanowires in a single processing step, with diameters ranging from 100 nm to 400 nm depending on the target wavelength, enabling full RGB capability within one unified structure.　　On device performance, the company demonstrated a 2.5 μm sub-pixel pitch—equivalent to a 5.0 μm × 5.0 μm pixel size—and outlined a roadmap to further shrink this to 2.0 μm for both monochrome and monolithic RGB displays, MicroLED-info suggests.　　In parallel, Aledia has validated its 9V microLED devices on 200 mm silicon wafers, including 15×30 μm blue emitters on the same platform. The company also confirmed the commercial availability of its 3D-Nano microLED technology built on 200 mm silicon in February, the report adds.

Key word：

Optical Semiconductors

Release time：2026-04-27 10:39 reading：292 Continue reading>>

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New Thermal Management Breakthrough: GaN-on-Sapphire Substrate Thinned to 50μm

　　Recently, China-based Ziener Tech has unveiled progress in sapphire substrate thinning, announcing that it has successfully reduced the substrate thickness of its 8-inch GaN-on-sapphire wafers to 50μm.　　In practical applications, heat dissipation has long been a key bottleneck limiting GaN device performance. Substrate material plays a critical role in thermal management. Sapphire offers strong insulation, high thermal stability, and relatively good lattice and thermal matching with GaN, enabling simpler epitaxial structures. However, its inherently low thermal conductivity has historically constrained heat dissipation. Thinning the substrate effectively shortens the thermal conduction path, thereby improving overall device thermal performance.　　The company’s advancement lies in precise control of the substrate thinning process. According to Ziener, as substrate thickness was gradually reduced from the conventional 200μm to 100μm and ultimately to 50μm, device thermal performance improved significantly. Test data show that at 200μm, the junction-to-case thermal resistance is 1.6°C/W, comparable to silicon-based GaN devices. At 100μm, thermal resistance drops to 1.1°C/W, outperforming silicon-based solutions. At 50μm, it further decreases to 0.8°C/W—about half that of comparable GaN-on-silicon devices.　　Benefited from the improved thermal resistance, GaN-on-sapphire devices demonstrate clear thermal advantages over GaN-on-silicon counterparts in real-world applications. Under high-power conditions across various voltages and loads, Ziener’s devices consistently deliver lower temperature rise than competing silicon-based GaN devices, highlighting superior heat dissipation capability.　　Further validation in application scenarios also quantifies the impact of substrate thickness on device temperature. In tests conducted on a high-power totem-pole PFC power board, Ziener compared devices with 100μm and 50μm substrates. Results show that at 90 V input, the case temperature of the 50μm device is reduced by 13.6°C compared to the 100μm version; at 264 V input, the reduction reaches 14.5°C. Across multiple voltage and load conditions, GaN-on-sapphire devices consistently deliver lower temperature rise than equivalent GaN-on-silicon devices.　　Notably, Ziener also disclosed that it has completed technical development for an ultra-thin 30μm sapphire substrate, indicating further room for thermal performance improvement. For high power density and high-efficiency system applications, substrate thinning offers a viable pathway to overcoming thermal challenges in GaN devices.　　Industry analysts note that as the power semiconductor market increasingly demands higher efficiency, reliability, and compact form factors, advancements in substrate technology—an upstream cornerstone—will directly shape downstream competitiveness. GaN-on-sapphire already holds advantages in breakdown voltage and reliability in medium- to high-voltage applications. Continued progress in thermal management is expected to expand its adoption across a broader range of high-power scenarios.

Key word：

Semiconductors

Release time：2026-04-27 10:37 reading：295 Continue reading>>

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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：320 Continue reading>>

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Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.

Key word：

Murata

Release time：2026-04-24 10:39 reading：293 Continue reading>>

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ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.

Key word：

ROHM

Release time：2026-04-24 10:34 reading：290 Continue reading>>

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BIWIN Mini SSD Wins “Memory of the Year” of 2026 China IC Design Awards

　　Recently, the 2026 International IC & Component Exhibition and Conference (shortened as IIC), hosted by Aspencore, successfully concluded in Shanghai. At the concurrent 2026 China IC Design Awards Ceremony, BIWIN Mini SSD was honored with the “Memory of the Year” award. This recognition not only affirms the product’s technological innovation and commercial value, but also highlights BIWIN’s continued leadership and long-term commitment to advancing the memory industry.　　01 Redefining SSD Form Factor and Architecture　　“China IC Design Awards”, as one of the most authoritative and creditable industry awards, acknowledges enterprises and products that stands out in technological innovation, market application, and industry contribution. Among these, “Memory of the Year” Award, as one of the core evaluative unit, cites memory products that features innovative design, scaled production, and technical improvements.　　Rather than merely a physically-miniaturized SSD, BIWIN Mini SSD breaks the traditional trade-off between performance, size, and scalability. Through innovating solutions and advanced packaging, Mini SSD offers a brand-new memory solution combined with compact form factor, strong performance and excellent scalability for AI PC and on-device AI scenarios. It effectively addresses key limitations of existing solutions, such as the oversized form factor of M.2 SSD, performance bottlenecks of MicroSD cards, and limited scalability of UFS/eMMC.　　Ultra-compact, flagship performance　　Delivers up to 2TB capacity, 3700MB/s read, and 3400MB/s write speeds in just 40% the size of an M.2 2230 SSD and about 1g weight.　　Rugged and reliable　　Engineered with IP68-rated dust and water resistance, 3-meter drop protection, and 12,000+ insertion cycles for demanding mobile environments.　　Tool-free expandability　　Features an industry-first standardized slot-based design, enabling seamless TB-level storage upgrades without tools.　　Since its debut, BIWIN Mini SSD has received widespread global recognition, including Best Inventions of 2025 by TIME, CES 2026 TWICE Picks Award, Embedded World Best-in-Show, and MWC 2026 Best-in-Show. It has also been shortlisted for the 2026 Edison Awards, often referred to as the “Oscars of innovation.” This latest recognition further validates Mini SSD’s leadership across both technology innovation and commercial potential.　　02 Accelerating Ecosystem and Standardization　　BIWIN Mini SSD is more than a product—it is the foundation of an open ecosystem. It has already been adopted by leading brands such as One-Netbook, GPD, and Waterworld, enabling commercialization in AI PCs and handheld gaming devices. To accelerate adoption, BIWIN is collaborating with ecosystem leaders including Intel, Longcheer, BYD Electronics and Luxshare Precision.　　Promoting Standardization to Reduce Compatibility Costs　　Establishing IP enterprises, incentive mechanisms and royalty-sharing frameworks to to align ecosystem interests; opening up technical specifications and interface standards to lower integration barriers and reduce industry-wide adaptation costs.　　Accelerating Adoption Across AI Devices　　Focusing on key scenarios such as AI PC, intelligent robots, and gaming consoles, with multiple partners actively working on integration; collaborating with partners to speed up technical validation, introduction and industry-wide application.　　Advancing the Technology Roadmap　　Deploying forward-looking products such as PCIe Gen4 ×4 and Gen5 ×4 solutions to enhance bandwidth performance; advancing R&D on 4TB or larger-capacity products based on 32-die stacking packaging process.　　03 Full-Stack Capabilities Power “Device–Edge–Cloud”　　The success of BIWIN Mini SSD is rooted in BIWIN’s full-stack capabilities based on “Integrated Solutions and Manufacturing” strategy. With continuous investments in R&D to reinforce the innovation foundation, BIWIN has spent RMB 632 million in 2025, representing a 41.34% year-on-year growth. To date, BIWIN has accumulated 521 patents worldwide along with 66 software copyrights.　　Backed by deep expertise across solution development, IC design, and advanced packaging technologies, BIWIN has built a comprehensive portfolio covering edge AI devices, smart terminals, industrial and automotive-grade applications, as well as enterprise storage. This end-to-end capability enables the company to effectively serve customers across the device–edge–cloud spectrum, translating technology into real-world competitiveness.　　In emerging on-device AI, BIWIN’s ePoP solutions combine ultra-thin stacking with power-efficient firmware, supporting leading companies such as Google, Meta, Xiaomi, and Rokid. These solutions are optimized for wearables like smart glasses and smartwatches, where size, latency, and power efficiency are critical. In automotive, BIWIN has been adopted by 20+ OEMs and Tier 1 suppliers, with products already in mass production. In the cloud segment, its enterprise SSDs are shipping at scale to leading OEMs, AI server vendors, and major internet companies.　　The “Memory of the Year” award at the 2026 China IC Design Awards underscores the technical strength and commercial momentum of BIWIN Mini SSD. BIWIN will continue to focus on innovation to meet the growing demands of the AI era and drive long-term growth.

Key word：

BIWIN

Release time：2026-04-24 10:27 reading：327 Continue reading>>

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Renesas’ Radiation Hardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission

　　TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its radiation‑hardened (rad-hard) ICs are being used in NASA’s Artemis II mission, which successfully launched from the Kennedy Space Center in Florida on April 1. The first crewed mission around the moon in decades, Artemis II represents a major milestone in NASA’s plans to return humans to the moon and establish a long-term presence on the lunar surface.　　Four astronauts are now en route to orbit the moon aboard NASA’s Orion spacecraft as part of NASA’s Artemis II mission, taking humans farther from Earth than they have traveled in over fifty years. During the flight, the crew will test spacecraft systems and crew performance in this deep‑space environment before returning safely home. The mission will validate key spacecraft capabilities and position Orion for future crewed journeys and lunar landings.　　Within the Artemis II core systems, including the Orion capsule and Space Launch System (SLS) rocket, Renesas rad-hard ICs are used across multiple subsystems. These Intersil-branded devices are embedded in the space vehicle’s avionics and safety launch system, helping to regulate and distribute power, maintain signal integrity and support onboard computing. These specialized ICs are built to operate reliably when exposed to the elevated levels of radiation and extreme temperatures that are typical of human space missions.　　“Human space flight missions leave no margin for failure, and we’re proud to be one of the select few semiconductor companies entrusted to provide space-qualified technology for this historic crewed Artemis mission,” said Chris Stephens, Vice President of the HiRel Business Division at Renesas. “Our rad-hard devices help keep spacecraft systems connected, protected and precisely controlled, as crews venture into deep space. We look forward to supporting future landmark missions and ushering in the next era of solar system exploration with our space‑grade semiconductor solutions.”　　The Renesas Intersil brand has a long history in the space industry spanning more than six decades, beginning with the founding of Radiation Inc. in 1950. Since then, virtually every satellite, shuttle launch and deep-space exploration mission has included Intersil-branded products. Renesas leverages this experience to deliver efficient, thermally-optimized and highly-reliable SMD, MIL-STD-883 and MIL-PRF 38535 Class-V/Q Intersil-branded products for the defense, high-reliability (Hi-Rel), and rad-hard space markets. Renesas Intersil-brand rad-hard ICs support subsystems for mission critical applications in data communications transfer, power supplies and power conditioning, general protection circuitry, and telemetry, tracking and control (TT&C).　　For more information on Renesas’ Intersil-brand space and hi-reliability solutions, visit: www.renesas.com/space.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.　　The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

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Release time：2026-04-08 17:16 reading：483 Continue reading>>

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