GigaDevice Launches GD25NX Series xSPI NOR Flash with Dual-Voltage Design Optimized for high-speed, low-power 1.2 V SoC applications
  GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today announced the launch of its new generation of high-performance dual-voltage xSPI NOR Flash products – the GD25NX series. Featuring a 1.8 V core and 1.2 V I/O design, the GD25NX series connects directly to 1.2 V system on chips (SoCs) without an external booster circuit, significantly reducing system power consumption and BOM cost.  Building on the success of the 1.2 V I/O GD25NF and GD25NE series, the new GD25NX further extends GigaDevice's expertise in dual-voltage Flash design. With high-speed data transfer performance and outstanding reliability, the GD25NX series is ideal for demanding applications such as wearables, data centers, edge AI, and automotive electronics that require exceptional stability, responsiveness, and power efficiency.  The GD25NX xSPI NOR Flash supports an octal SPI interface with a maximum clock frequency of 200 MHz in both single transfer rate (STR) and double transfer rate (DTR) modes, delivering data throughput of up to 400 MB/s. It achieves a typical page program time of 0.12 ms and a sector erase time of 27 ms, offering 30% faster programming speed and 10% shorter erase time compared with conventional 1.8 V octal Flash products.  To safeguard data reliability, the GD25NX series integrates error correction code (ECC) algorithms and cyclic redundancy check (CRC) verification to enhance data integrity and extend product lifespan. In addition, the series supports a data strobe (DQS) functionality to ensure signal integrity in high-speed system designs, meeting the stringent data transfer stability requirements of SoCs use on data center and automotive applications.  Built on an innovative 1.2 V I/O architecture, the GD25NX series delivers outstanding performance while maintaining exceptional power efficiency. At a frequency of 200 MHz, the device achieves read currents as low as 16 mA in Octal I/O STR mode and 24 mA in Octal I/O DTR mode. Compared with the conventional 1.8 V Octal I/O SPI NOR Flash devices, the 1.2 V I/O design reduces read power consumption by up to 50%, significantly improving system energy efficiency while sustaining high-speed operation—an ideal choice for power-sensitive applications.  "The GD25NX series sets a new benchmark for combining low voltage with high performance in SPI NOR Flash," stated by Ruwei Su, GigaDevice Vice President and General Manager of Flash BU. "Its design aligns closely with mainstream SoC requirements for low-voltage interfaces, enabling higher integration and lower BOM costs for customers. Moving forward, GigaDevice will continue to expand its dual-voltage portfolio with broader density and package options to help customers build the next generation of efficient and reliable low-power storage solutions."  The GD25NX series is available in 64 Mb and 128 Mb densities, meeting diverse storage needs across various applications. These devices are supported on TFBGA24 8×6 mm (5×5 ball array) and WLCSP (4×6 ball array) packages. Samples of the 128 Mb GD25NX128J are now available for customer evaluation, while the 64 Mb GD25NX64J samples are currently being prepared. For detailed technical information or pricing inquiries, please contact your local authorized GigaDevice sales representative.
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Release time:2025-12-15 15:57 reading:230 Continue reading>>
Renesas Releases its First Wi-Fi 6 and Wi-Fi/Bluetooth LE Combo MCUs for IoT and Connected Home Applications
  Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA6W1 dual-band Wi-Fi 6 wireless microcontroller (MCU), along with the RA6W2 MCU that integrates both Wi-Fi 6 and Bluetooth® Low Energy (LE) technologies. These connectivity devices address the growing demand for always-connected, ultra-low-power IoT devices across smart home, industrial, medical and consumer applications. Renesas also launched fully integrated modules that accelerate development with built-in antennas, wireless protocol stacks, and pre-validated RF connectivity.  Ultra Low Power Operation for Always-Connected IoT  Today’s IoT devices must stay always connected to improve application usability and response time, while maintaining the lowest possible power consumption to extend battery life or to meet eco-friendly regulations. Renesas’ Wi-Fi 6 MCUs offer features such as Target Wake Time (TWT), which enables extended sleep times without compromising cloud connectivity and power consumption. This is critical for applications such as environmental sensors, smart locks, thermostats, surveillance cameras, and medical monitors, where real-time control, remote diagnostics and over-the-air (OTA) updates are critical.  Additionally, both MCU Groups are optimized for ultra-low power consumption, consuming as little as 200nA to 4µA in sleep mode and under 50µA in Delivery Traffic Indication Message (DTIM10). With the “sleepy connected” Wi-Fi functionality, these devices stay connected with minimal power draw, meeting the growing requirements of modern energy efficiency standards.  Scalable RA MCU Architecture with Full Software Support  Built on the Arm® Cortex®-M33 CPU core running at 160 MHz with 704 KB of SRAM, the MCUs enable engineers to develop cost-effective, standalone IoT applications using integrated communication interfaces and analog peripherals, without the need for an external MCU. Customers also have the option to design with a host MCU that can be selected from Renesas’ broad RA MCU offerings and attach the RA6W1 and RA6W2 as connectivity and networking add-ons. Both RA6W1 and RA6W2 are designed to work with Renesas’ Flexible Software Package (FSP) and e² studio integrated development environment. As the first Wi-Fi MCUs in the RA portfolio, they offer a scalable platform that supports seamless software reuse across the RA family.  High Performance Dual-Band Wi-Fi 6 with 2.4 and 5 GHz Connectivity  With support for both 2.4 and 5 GHz bands, both MCUs deliver superior throughput, low latency, and reduced power consumption. The dual-band capability dynamically selects the most suitable band based on real-time conditions, ensuring a stable and high-speed connection even in environments with many connected devices. Advanced features such as Orthogonal Frequency Division Multiple Access (OFDMA) and TWT boost performance and energy efficiency, making these solutions well suited for dense urban environments and battery-powered devices.  Robust Security and Matter-Certified Interoperability  The RA6W1 and RA6W2 devices offer advanced built-in security including AES-256 encryption, secure boot, key storage, TRNG, and XiP with on-the-fly decryption to keep data safe from unauthorized access. The RA6W1 is RED certified (Radio Equipment Directive), which makes it easier for developers to future-proof their design. Additionally, the device is Matter ready and certified with Matter 1.4, and is compatible across smart home platforms. Renesas supports both MCUs and modules through the Renesas Product Longevity Program, offering 15-year support for MCUs and 10 years for modules.  “We’re offering our customers the flexibility to design with a standalone Wi-Fi device, a Wi-Fi/Bluetooth LE combo, or fully integrated modules depending on their needs,” said Chandana Pairla, VP of the Connectivity Solutions Division at Renesas. “These wireless solutions save power, simplify system design and lower BOM cost. With hosted or hostless implementation options, customers can confidently begin their wireless onboarding journey and seamlessly integrate into next-generation connected systems.”  Two types of modules, Wi-Fi 6 (RRQ61001) and Wi-Fi/Bluetooth LE combo (RRQ61051) simplify design by integrating certified RF components and wireless connectivity stacks that comply with global network standards. Supported RF certification standards include the U.S. (FCC), Canada (IC), Brazil (ANATEL), Europe (CE/RED), UK (UKCA), Japan (Telec), South Korea (KCC), China (SRRC) and Taiwan (NCC). By integrating connectivity at the system level, the modules significantly reduce design effort and accelerate time to market.  Winning Combinations  Renesas offers “Advanced Low-Power Wireless HMI for Household Appliances” and “Automatic Pet Door & Tracking System” that combine the new Wi-Fi 6 MCU and Wi-Fi/Bluetooth LE MCU with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.  Availability  The RA6W1 MCU is now available in FCQFN and WLCSP packages, along with the RRQ61001 and RRQ61051 modules. The RA6W2 MCU (BGA package) will be available in Q1/2026. The devices are supported by the FSP, e² studio, evaluation kit and software development kit (SDK) that include flash memory, PCB trace antennas, connectors and embedded power profiler for power consumption analysis. Renesas also offers comprehensive software tools to aid system application development, as well as the Production Line Tool (PLT) for production testing of wireless MCUs.
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Release time:2025-12-12 16:28 reading:243 Continue reading>>
ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability
  ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.  In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called “the pizza box type,” stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.  ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.  The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September 2025 (sample price: $37.0/unit, tax excluded).   Product Lineup  Application Examples  ・Industrial equipment: Power supplies for AI servers and data centers, PV inverters, ESS (energy storage systems)  ・Consumer equipment: General power supplies  EcoSiC™ Brand  EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.  Terminology  Totem Pole PFC Circuit  A highly efficient power factor correction circuit configuration that reduces diode losses by using MOSFETs as rectifier elements. The adoption of SiC MOSFETs enables high voltage withstand capability, high efficiency, and high-temperature operation for the power supply.
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Release time:2025-12-04 17:10 reading:331 Continue reading>>
ROHM launches RPR-0730: High-Speed, High-Precision Optical Sensor Featuring VCSEL Technology
  ROHM has developed the “RPR-0730”, analog compact optical sensor, capable of high-precision detection of fast-moving objects. This sensor can be widely utilized in consumer and industrial equipment applications, including printers and conveyor systems.  As industrial and office equipment becomes increasingly sophisticated and automated, there is a growing demand for improved sensing technology accuracy. In applications such as label printers, material or product transport systems, and copiers, the need for technology that can identify objects more accurately is essential. Moreover, increased speed driven by productivity improvements makes the introduction of high-speed, high-precision optical sensors crucial.  The RPR-0730 is a compact reflective optical sensor (photo reflector). It employs an infrared VCSEL, which offers higher directionality than LEDs, enabling detection of finer objects. Furthermore, by using a phototransistor with analog output as the receiver, the sensor achieves a response time of 10µs. This dual combination enables high-speed, accurate identification of fine lines as narrow as 0.1mm - previously difficult to detect with conventional LED light sources. As an addition to the existing digital output sensor “RPR-0720” series, RPR-0730 expands capability to applications requiring faster sensing, such as print detection in copiers, label printers, or rotational detection in motors and gears.  The package is ultra-compact at 2.0mm × 1.0mm × 0.55mm and employs a visible light filtering resin to suppress interference from ambient light or sunlight. This enables stable detection even in environments with varying light conditions, such as factories or outdoors. The sensor can also be easily integrated into equipment requiring installation in small, confined spaces, like inside conveyors or precision instruments, making it suitable for a wider range of applications.  Mass production of the new product commenced in October 2025 (sample price: $2.2/unit, tax excluded).  Going forward, ROHM will continue to leverage its development expertise in light-emitting and light-receiving elements to create sensing products that meet customer needs, contributing to the miniaturization and enhanced convenience of various devices.  Application Examples  •Print detection, paper feed/jam detection in label printers, copiers, shredders, etc.  •Object detection of packages/specimens, workpiece position detection in conveyance systems, automatic inspection equipment, etc.  •Motor/gear rotational detection in industrial robots, etc.  Terminology  Photo reflector  A type of optical sensor combining an emitting element and a receiving element. It illuminates an object and detects the intensity of the reflected light to measure the presence or distance of an object.  VCSELL  Abbreviation for Vertical Cavity Surface Emitting LASER. A type of laser light source, it is a semiconductor laser that can emit light directly from its surface. Compared to LEDs, it offers higher directionality and is suitable for high-precision sensing. Originally adopted for optical communication applications, its use as a light source for proximity sensors and distance sensors has been expanding in recent years.  Phototransistor  A transistor-type photoelectric conversion element that converts optical signals into electrical signals. It integrates a photodiode and a transistor, controlling the base current with light to output an amplified collector current.
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Release time:2025-12-04 17:04 reading:299 Continue reading>>
Murata develops integrated passive device for Semtech’s SX126X family
  Murata Manufacturing Co., Ltd. has developed a new integrated passive device (IPD) for use with the Semtech LoRa Connect™ SX126x family, which includes the SX1261, SX1262, and LLCC68 products. Using a proprietary low-temperature co-fired ceramic (LTCC) process, Murata has successfully replaced a series of discrete matching components of the SX1261/2 reference design with a single 2.00mm x 1.25mm size LTCC component.  The IPD enables SX1261/2 radio designers to optimize for both size and performance using two dedicated parts. The LFB21892MDZ7F957 is optimized for US and European ISM bands, delivering the full output power for the US FCC bands. The LFB21892MDZ7F821 is optimized for Eurocentric designs that need to maximize the efficiency performance.  “The Murata IPD offers the most efficient development path to realizing the full performance of the SX1261/2, featuring a miniaturized form factor that can significantly reduce board space,” says Arthur Kiang, Product Manager, RF Components, Murata. “The reduction in the number of matching components enables lower material costs and simplifies the design process, leading to shorter lead times. This integration also lowers the probability of soldering and manufacturing issues, as there is only one component to monitor in production.”  “Semtech’s LoRa Connect™ SX126x family has become the trusted choice for LoRaWAN® networks and long-range IoT connectivity in applications from smart metering to industrial sensing,” says Carlo Tinella, product marketing director of wireless and sensing products at Semtech. “Murata’s IPD solution demonstrates the strength of our LoRa® ecosystem, helping radio engineers accelerate development while optimizing for both miniaturization and regulatory compliance. This partnership streamlines the path from design to deployment for millions of IoT devices being deployed globally.”  Product samples are currently available, with mass production of the IPD commencing shortly.
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Release time:2025-11-28 17:33 reading:345 Continue reading>>
ROHM launches wide SOA MOSFET for AI servers in compact 5×6mm package
  ROHM has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5.0mm × 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.  The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.  Therefore, ROHM has expanded its line-up of 100V power MOSFETs ideal for hot-swap circuits in AI servers to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher density mounting compared to the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8.0mm × 8.0mm size) package, which ROHM has released in May 2025.  The new product achieves a low on-resistance (RDS(on)) of 4.0mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs.  Mass production of the new product began in September 2025 (sample price: $5.5/unit, excluding tax).  ROHM will continue to expand its product lineup for 48V power supplies, which are increasingly adopted in applications such as AI servers. By providing highly efficient and reliable solutions, we will contribute to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.  Application Examples  •48V system AI servers and data center power hot-swap circuits  •48V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.)  •Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)  •UPS, emergency power systems (battery backup units)  EcoMOS™ Brand  EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.  ・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.  Terminology  SOA(Safe Operating Area)  The voltage and current range within which a device can operate safely without damage. Operation beyond this safe operating area may cause thermal runaway or damage; therefore, consideration of the SOA is essential, particularly in applications where inrush current or overcurrent may occur.  Hot-swap circuit  The complete circuitry supports the hot-swap function, which enables the removal or insertion of components while the device's power supply remains active. Comprising MOSFETs, protective elements, and connectors, it suppresses inrush currents occurring during component insertion and provides overcurrent protection, thereby ensuring the safe operation of the system and connected components.  Inrush Current  The high current exceeds the rated current value that flows momentarily when switching on electronic equipment. Controlling this prevents damage to devices and stabilizes the system by reducing the load on components within the power supply circuit.  On-resistance(RDS(on))  The resistance value between the drain and source terminals when the MOSFET is in operation (on). The lower the value, the less power loss occurs during operation.
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Release time:2025-11-28 17:28 reading:396 Continue reading>>
ROHM’s Three-Phase Brushless DC Motor Gate Driver Achieving FET Heat Reduction while Suppressing EMI
  ROHM has developed the “BD67871MWV-Z” three-phase brushless DC motor gate driver for medium voltage applications (12 to 48V systems). By incorporating ROHM’s proprietary gate drive technology TriC3™, it greatly reduces FET’s switching loss while maintaining low EMI – traditionally a trade-off in motor driver ICs.  Motors account for approximately 60% of global electricity consumption, making control technology which affects energy efficiency, increasingly critical. In 12V to 48V motor drive applications, a simple configuration where an MCU controls three gate drivers has been the mainstream. However, in recent years, demands for high efficiency and precise control have grown, accelerating the adoption of solutions combining an MCU with an integrated three-phase motor driver. Further, a technical challenge in three-phase motor drivers has been the trade-off between “power consumption reduction” and “noise / EMI (electro-magnetic interference) reduction,”.  BD67871MWV-Z features ROHM's proprietary Active Gate Drive technology “TriC3™”, which rapidly senses voltage information from the external power FETs and adjust gate drive current accordingly in real-time. This greatly reduces FETs’ switching loss (and hence heat generation) FET power consumption during switching while simultaneously suppressing ringing to achieve low EMI.  Compared to ROHM's conventional constant-current drive products, TriC3™ gate drive has been demonstrated in actual motors that FET heat generation by approximately 35% while maintaining equivalent EMI levels. Furthermore, BD67871MWV-Z adopts UQFN28 package and pin layout which are commonly used in motor driver ICs for medium-voltage industrial equipment applications, contributing to reduced engineering effort required in circuit modifications and new designs.  Mass production of the new product commenced in September 2025 (sample price: $5.5/unit, tax excluded).  ROHM also offer general-purpose motor drivers (BD67870MWV-Z, BD67872MWV-Z) with the same package and pin configuration as the new product, designed for constant-voltage drive. From general-purpose types to the value-added types featuring the new TriC3™, we offer a comprehensive product lineup to supports a wide variety of applications and use cases. We are committed to contributing to improved motor efficiency, enhanced application functionality, and reduced power consumption.  Application Examples  •Industrial Equipment: Various motors such as electric drills/drivers and industrial fans  •Consumer Appliances: Various motors used in vacuum cleaners, air purifiers, air conditioners, ventilation fans and E-bikes (electric-assist sports bicycles)  TriC3™  A multi-step constant current drive technology developed by ROHM. By controlling gate current in three steps, it achieves high-speed, high-efficiency operation while minimizing EMI by suppressing ringing.  • TriC3™ is a trademark or registered trademark of ROHM Co., Ltd.  Terminology  EMI (Electromagnetic Interference)  EMI is used as an indicator of how much noise a product generates during operation, potentially causing malfunctions in surrounding ICs or systems. “Low EMI” means the product generates less noise.  Ringing  High-frequency oscillations or overshoot occurring during switching. This arises from the resonation between inductance and capacitance, including parasitic elements in the circuit. In the context of motor driving, ringing happens when the power MOSFETs are turned on and off.
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Release time:2025-11-21 16:54 reading:400 Continue reading>>
Now Standard in Siemens’ Flotherm™! ROHM Expands Its High-Accuracy EROM Models for Shunt Resistors
  ROHM has expanded its lineup of EROM (Embeddable BCI-ROM) models for shunt resistors and has made them available on ROHM’s website. In addition, these models are now standard in Siemens’ electronic thermal design software, Simcenter™ Flotherm™*.  ROHM’s shunt resistors are widely used in automotive and industrial equipment applications, where their high-accuracy current detection and superior reliability are highly valued. We have added the PMR series to the EROM lineup, alongside the previously available PSR series.  The EROM models achieve high accuracy with a measurement deviation within ±5% for both surface temperature (ΔT) and thermal resistance, enabling thermal analysis that closely reflects actual operating conditions. This contributes to improved simulation accuracy in the thermal design phase and enhances overall development efficiency.  Furthermore, by standard implementation in Simcenter™ Flotherm™, these models make it easier for component manufacturers and set manufacturers to share thermal analysis data. This allows for highly accurate and efficient simulations while maintaining the confidentiality of proprietary information.  Going forward, ROHM will continue to enhance the support for customers’ design and development activities through both its high-performance components and advanced simulation models.  *Standard in Simcenter™ Flotherm™ 2510 and later.  Terminology  EROM (Embeddable BCI-ROM)  A reduced-order model that can be used within Simcenter™ Flotherm™ to perform thermal simulations. It allows sharing while keeping internal component structures (confidential design data) hidden, enabling fast and highly accurate analysis.  Simcenter™ Flotherm™  A CFD (Computational Fluid Dynamics) simulator developed by Siemens, specialized in thermal and cooling design for electronic devices. It enables fast and accurate thermal analysis from the early design stage through validation, supporting exceptionally reliable thermal design.  Simcenter™ Flotherm™ is a registered trademark of Siemens.
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Release time:2025-11-21 16:50 reading:380 Continue reading>>
Renesas’ Industry-First Gen6 DDR5 Registered Clock Driver Sets Performance Benchmark by Delivering 9600 MT/s
  Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced that it has delivered the industry’s first sixth-generation Registered Clock Driver (RCD) for DDR5 Registered Dual In-line Memory Modules (RDIMMs). The new RCD is the first to achieve a data rate of 9600 Mega Transfers Per Second (MT/s), surpassing the industry standard. This breakthrough marks a significant leap from the 8800 MT/s performance of Renesas’ Gen5 RCD, setting a new standard for memory interface performance in data center servers.  Key Features of Renesas’ Gen6 DDR5 RCD  10% Bandwidth Increase over Renesas’ Gen5 RCD (9600 MT/s versus 8800 MT/s)  Backward Compatibility with Gen5 Platforms: Provides seamless upgrade path  Enhanced Signal Integrity and Power Efficiency: Enables AI, HPC, and LLM workloads  Expanded Decision Feedback Equalization Architecture: Offers eight taps and 1.5mV granularity for superior margin tuning  Decision Engine Signal Telemetry and Margining (DESTM): Improved system-level diagnostics provides real-time signal quality indication, margin visibility, and diagnostic feedback for higher speeds  The new DDR5 RDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance Compute (HPC) and other data center applications. Renesas has been instrumental in the design, development and deployment of the new RDIMMs, collaborating with industry leaders including CPU and memory providers, along with end customers. Renesas is the leader in DDR5 RCDs, building on its legacy of signal integrity and power optimization expertise.  “Explosive growth of generative AI is fueling higher SoC core count. This is driving unprecedented demand for memory bandwidth and capacity as a critical enabler of data center performance,” said Sameer Kuppahalli, Vice President of Memory Interface Division at Renesas. “Our sixth generation DDR5 Registered Clock Driver demonstrates Renesas’ continued commitment to memory interface innovation, path-finding and delivering solutions to stay ahead of market demand.”  "Samsung has collaborated with Renesas across multiple generations of memory interface components, including the successful qualification of Gen5 DDR5 RCD and PMIC5030,” said Indong Kim, VP of DRAM Product Planning, Samsung Electronics. “We are now excited to integrate Gen6 RCD into our DDR5 DIMMs, across multiple SoC platforms to support the growing demands of AI, HPC, and other memory-intensive workloads."  Availability  The RRG5006x Gen6 RCD is designed to meet the stringent requirements of next-generation server platforms, offering robust performance, reliability, and scalability. Renesas is sampling the new RRG5006x RCD to select customers today, including all major DRAM suppliers. Production availability is expected in the first half of 2027.
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Release time:2025-11-13 16:33 reading:549 Continue reading>>
Murata expands lineup of high cutoff frequency chip common mode choke coils in 0504-inch size for automotive high-speed differential interfaces
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Release time:2025-11-10 17:12 reading:431 Continue reading>>

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