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MicroLED Gains Focus as Seoul Semiconductor Plans $180M AR Investment, Aledia Reports Breakthrough

　　Amid mounting margin pressure and slowing growth in the LED industry, players are moving beyond traditional segments in search of new momentum, with MicroLED emerging as a key focus. According to MicroLED-info, Seoul Semiconductor plans to invest KRW 250 billion (around $180 million) over the next five years, primarily in the R&D and production of microLED microdisplay modules for AR applications.　　The report suggests that the company has embarked on a government-approved restructuring plan as its core LED package business faces mounting pressure from falling prices and weakening profitability. Under the initiative, the new displays will be built on Seoul Semiconductor’s proprietary WICOP (Wafer Integrated Chip on PCB) technology, the report adds.　　As noted by Maeil Ilbo, founded in 1992, Seoul Semiconductor supplies LED packages across lighting, automotive, and IT, and holds about a 4.8% global share in the optoelectronics market. Despite its proprietary wire-free WICOP technology, the company has come under pressure from persistent price declines and softer demand, weighing on margins, the report explains.　　French MicroLED Startup Achieves Key Milestone　　On the other hand, French startup Aledia, according to MicroLED-info, has successfully demonstrated a fully functional monolithic RGB epitaxial wafer, marking a key milestone for the technology. The achievement validates the company’s end-to-end monolithic RGB process, enabling red, green, and blue emission from a single epi wafer fabricated in a single run, the report notes.　　According to the company, its proprietary nanowire-based architecture can grow nanowires in a single processing step, with diameters ranging from 100 nm to 400 nm depending on the target wavelength, enabling full RGB capability within one unified structure.　　On device performance, the company demonstrated a 2.5 μm sub-pixel pitch—equivalent to a 5.0 μm × 5.0 μm pixel size—and outlined a roadmap to further shrink this to 2.0 μm for both monochrome and monolithic RGB displays, MicroLED-info suggests.　　In parallel, Aledia has validated its 9V microLED devices on 200 mm silicon wafers, including 15×30 μm blue emitters on the same platform. The company also confirmed the commercial availability of its 3D-Nano microLED technology built on 200 mm silicon in February, the report adds.

Key word：

Optical Semiconductors

Release time：2026-04-27 10:39 reading：142 Continue reading>>

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New Thermal Management Breakthrough: GaN-on-Sapphire Substrate Thinned to 50μm

　　Recently, China-based Ziener Tech has unveiled progress in sapphire substrate thinning, announcing that it has successfully reduced the substrate thickness of its 8-inch GaN-on-sapphire wafers to 50μm.　　In practical applications, heat dissipation has long been a key bottleneck limiting GaN device performance. Substrate material plays a critical role in thermal management. Sapphire offers strong insulation, high thermal stability, and relatively good lattice and thermal matching with GaN, enabling simpler epitaxial structures. However, its inherently low thermal conductivity has historically constrained heat dissipation. Thinning the substrate effectively shortens the thermal conduction path, thereby improving overall device thermal performance.　　The company’s advancement lies in precise control of the substrate thinning process. According to Ziener, as substrate thickness was gradually reduced from the conventional 200μm to 100μm and ultimately to 50μm, device thermal performance improved significantly. Test data show that at 200μm, the junction-to-case thermal resistance is 1.6°C/W, comparable to silicon-based GaN devices. At 100μm, thermal resistance drops to 1.1°C/W, outperforming silicon-based solutions. At 50μm, it further decreases to 0.8°C/W—about half that of comparable GaN-on-silicon devices.　　Benefited from the improved thermal resistance, GaN-on-sapphire devices demonstrate clear thermal advantages over GaN-on-silicon counterparts in real-world applications. Under high-power conditions across various voltages and loads, Ziener’s devices consistently deliver lower temperature rise than competing silicon-based GaN devices, highlighting superior heat dissipation capability.　　Further validation in application scenarios also quantifies the impact of substrate thickness on device temperature. In tests conducted on a high-power totem-pole PFC power board, Ziener compared devices with 100μm and 50μm substrates. Results show that at 90 V input, the case temperature of the 50μm device is reduced by 13.6°C compared to the 100μm version; at 264 V input, the reduction reaches 14.5°C. Across multiple voltage and load conditions, GaN-on-sapphire devices consistently deliver lower temperature rise than equivalent GaN-on-silicon devices.　　Notably, Ziener also disclosed that it has completed technical development for an ultra-thin 30μm sapphire substrate, indicating further room for thermal performance improvement. For high power density and high-efficiency system applications, substrate thinning offers a viable pathway to overcoming thermal challenges in GaN devices.　　Industry analysts note that as the power semiconductor market increasingly demands higher efficiency, reliability, and compact form factors, advancements in substrate technology—an upstream cornerstone—will directly shape downstream competitiveness. GaN-on-sapphire already holds advantages in breakdown voltage and reliability in medium- to high-voltage applications. Continued progress in thermal management is expected to expand its adoption across a broader range of high-power scenarios.

Key word：

Semiconductors

Release time：2026-04-27 10:37 reading：149 Continue reading>>

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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：204 Continue reading>>

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Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.

Key word：

Murata

Release time：2026-04-24 10:39 reading：189 Continue reading>>

Trade news

ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.

Key word：

ROHM

Release time：2026-04-24 10:34 reading：197 Continue reading>>

Trade news

BIWIN Mini SSD Wins “Memory of the Year” of 2026 China IC Design Awards

　　Recently, the 2026 International IC & Component Exhibition and Conference (shortened as IIC), hosted by Aspencore, successfully concluded in Shanghai. At the concurrent 2026 China IC Design Awards Ceremony, BIWIN Mini SSD was honored with the “Memory of the Year” award. This recognition not only affirms the product’s technological innovation and commercial value, but also highlights BIWIN’s continued leadership and long-term commitment to advancing the memory industry.　　01 Redefining SSD Form Factor and Architecture　　“China IC Design Awards”, as one of the most authoritative and creditable industry awards, acknowledges enterprises and products that stands out in technological innovation, market application, and industry contribution. Among these, “Memory of the Year” Award, as one of the core evaluative unit, cites memory products that features innovative design, scaled production, and technical improvements.　　Rather than merely a physically-miniaturized SSD, BIWIN Mini SSD breaks the traditional trade-off between performance, size, and scalability. Through innovating solutions and advanced packaging, Mini SSD offers a brand-new memory solution combined with compact form factor, strong performance and excellent scalability for AI PC and on-device AI scenarios. It effectively addresses key limitations of existing solutions, such as the oversized form factor of M.2 SSD, performance bottlenecks of MicroSD cards, and limited scalability of UFS/eMMC.　　Ultra-compact, flagship performance　　Delivers up to 2TB capacity, 3700MB/s read, and 3400MB/s write speeds in just 40% the size of an M.2 2230 SSD and about 1g weight.　　Rugged and reliable　　Engineered with IP68-rated dust and water resistance, 3-meter drop protection, and 12,000+ insertion cycles for demanding mobile environments.　　Tool-free expandability　　Features an industry-first standardized slot-based design, enabling seamless TB-level storage upgrades without tools.　　Since its debut, BIWIN Mini SSD has received widespread global recognition, including Best Inventions of 2025 by TIME, CES 2026 TWICE Picks Award, Embedded World Best-in-Show, and MWC 2026 Best-in-Show. It has also been shortlisted for the 2026 Edison Awards, often referred to as the “Oscars of innovation.” This latest recognition further validates Mini SSD’s leadership across both technology innovation and commercial potential.　　02 Accelerating Ecosystem and Standardization　　BIWIN Mini SSD is more than a product—it is the foundation of an open ecosystem. It has already been adopted by leading brands such as One-Netbook, GPD, and Waterworld, enabling commercialization in AI PCs and handheld gaming devices. To accelerate adoption, BIWIN is collaborating with ecosystem leaders including Intel, Longcheer, BYD Electronics and Luxshare Precision.　　Promoting Standardization to Reduce Compatibility Costs　　Establishing IP enterprises, incentive mechanisms and royalty-sharing frameworks to to align ecosystem interests; opening up technical specifications and interface standards to lower integration barriers and reduce industry-wide adaptation costs.　　Accelerating Adoption Across AI Devices　　Focusing on key scenarios such as AI PC, intelligent robots, and gaming consoles, with multiple partners actively working on integration; collaborating with partners to speed up technical validation, introduction and industry-wide application.　　Advancing the Technology Roadmap　　Deploying forward-looking products such as PCIe Gen4 ×4 and Gen5 ×4 solutions to enhance bandwidth performance; advancing R&D on 4TB or larger-capacity products based on 32-die stacking packaging process.　　03 Full-Stack Capabilities Power “Device–Edge–Cloud”　　The success of BIWIN Mini SSD is rooted in BIWIN’s full-stack capabilities based on “Integrated Solutions and Manufacturing” strategy. With continuous investments in R&D to reinforce the innovation foundation, BIWIN has spent RMB 632 million in 2025, representing a 41.34% year-on-year growth. To date, BIWIN has accumulated 521 patents worldwide along with 66 software copyrights.　　Backed by deep expertise across solution development, IC design, and advanced packaging technologies, BIWIN has built a comprehensive portfolio covering edge AI devices, smart terminals, industrial and automotive-grade applications, as well as enterprise storage. This end-to-end capability enables the company to effectively serve customers across the device–edge–cloud spectrum, translating technology into real-world competitiveness.　　In emerging on-device AI, BIWIN’s ePoP solutions combine ultra-thin stacking with power-efficient firmware, supporting leading companies such as Google, Meta, Xiaomi, and Rokid. These solutions are optimized for wearables like smart glasses and smartwatches, where size, latency, and power efficiency are critical. In automotive, BIWIN has been adopted by 20+ OEMs and Tier 1 suppliers, with products already in mass production. In the cloud segment, its enterprise SSDs are shipping at scale to leading OEMs, AI server vendors, and major internet companies.　　The “Memory of the Year” award at the 2026 China IC Design Awards underscores the technical strength and commercial momentum of BIWIN Mini SSD. BIWIN will continue to focus on innovation to meet the growing demands of the AI era and drive long-term growth.

Key word：

BIWIN

Release time：2026-04-24 10:27 reading：210 Continue reading>>

Trade news

Renesas’ Radiation Hardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission

　　TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its radiation‑hardened (rad-hard) ICs are being used in NASA’s Artemis II mission, which successfully launched from the Kennedy Space Center in Florida on April 1. The first crewed mission around the moon in decades, Artemis II represents a major milestone in NASA’s plans to return humans to the moon and establish a long-term presence on the lunar surface.　　Four astronauts are now en route to orbit the moon aboard NASA’s Orion spacecraft as part of NASA’s Artemis II mission, taking humans farther from Earth than they have traveled in over fifty years. During the flight, the crew will test spacecraft systems and crew performance in this deep‑space environment before returning safely home. The mission will validate key spacecraft capabilities and position Orion for future crewed journeys and lunar landings.　　Within the Artemis II core systems, including the Orion capsule and Space Launch System (SLS) rocket, Renesas rad-hard ICs are used across multiple subsystems. These Intersil-branded devices are embedded in the space vehicle’s avionics and safety launch system, helping to regulate and distribute power, maintain signal integrity and support onboard computing. These specialized ICs are built to operate reliably when exposed to the elevated levels of radiation and extreme temperatures that are typical of human space missions.　　“Human space flight missions leave no margin for failure, and we’re proud to be one of the select few semiconductor companies entrusted to provide space-qualified technology for this historic crewed Artemis mission,” said Chris Stephens, Vice President of the HiRel Business Division at Renesas. “Our rad-hard devices help keep spacecraft systems connected, protected and precisely controlled, as crews venture into deep space. We look forward to supporting future landmark missions and ushering in the next era of solar system exploration with our space‑grade semiconductor solutions.”　　The Renesas Intersil brand has a long history in the space industry spanning more than six decades, beginning with the founding of Radiation Inc. in 1950. Since then, virtually every satellite, shuttle launch and deep-space exploration mission has included Intersil-branded products. Renesas leverages this experience to deliver efficient, thermally-optimized and highly-reliable SMD, MIL-STD-883 and MIL-PRF 38535 Class-V/Q Intersil-branded products for the defense, high-reliability (Hi-Rel), and rad-hard space markets. Renesas Intersil-brand rad-hard ICs support subsystems for mission critical applications in data communications transfer, power supplies and power conditioning, general protection circuitry, and telemetry, tracking and control (TT&C).　　For more information on Renesas’ Intersil-brand space and hi-reliability solutions, visit: www.renesas.com/space.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.　　The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

Key word：

Renesas

Release time：2026-04-08 17:16 reading：447 Continue reading>>

Trade news

ROHM has added New Lineup of 17 High-Performance Op Amps Enhancing Design Flexibility

　　ROHM has added the new CMOS Operational Amplifier (op amp) series “TLRx728” and “BD728x” to its lineup. These are suitable for a wide range of applications including automotive, industrial, and consumer systems. A broad lineup also makes product selection easier.　　In recent years, demand for high-accuracy op amps has been rapidly increasing as automotive and industrial systems become more sophisticated, demanding faster speed, better precision, and higher efficiency. In applications requiring amplification of sensor outputs, minimizing signal error and delay is essential. To meet these requirements, a well-balanced set of key characteristics is needed, including Input Offset Voltage, Noise, and Slew Rate.　　These new products are high-performance op amps that offer a low input offset voltage, low noise, and high slew rate. TLRx728 features an input offset voltage of 150 μV (typ.), while the BD728x offers 1.6 mV (typ.). Both series have a noise voltage density of 12 nV/√Hz at 1kHz and a slew rate of 10 V/μs. They are therefore suitable for a wide range of precision applications, including sensor signal processing, current detection circuits, motor driver control, and power supply monitoring systems. Both series are designed to balance versatility and high performance rather than being limited to specific applications.　　Rail-to-Rail input/output capability allows maximum utilization of the power supply voltage range, ensuring a wide dynamic range.　　Furthermore, in addition to 1 channel, 2 channels, and 4 channels configurations, a diverse range of packages is available, enabling optimal product selection based on application and board size.　　The new products are being released simultaneously except for certain part numbers (Sample Price: 1-channel: $2.0, 2-channels: $2.8, 4-channels: $4.0 per unit, excluding tax).　　Application Examples　　Automotive equipment, industrial equipment, and consumer electronics.　　Example use case: Sensor signal processing, current detection circuits, motor driver control, power supply monitoring systems.　　Terminology　　Input Offset Voltage　　The voltage that must be applied between the op amp’s two input terminals to force the output to zero volts.　　Slew Rate　　A performance metric indicating how rapidly an op amp's output voltage can change while operating in linear region.　　Noise Voltage Density　　Also called noise spectral density. This is noise power per square root of bandwidth of 1 Hz. The total noise power within a bandwidth of B Hz is Noise Voltage Density x √B.

Key word：

ROHM

Release time：2026-04-03 10:56 reading：451 Continue reading>>

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Murata launches vibration sensor device for predictive maintenance capable of detecting high-frequency range up to 20 kHz

　　Murata Manufacturing Co., Ltd. announces the SMD-type vibration sensor device PKGM-210D-R. Mass production has already begun.　　In the factory automation (FA) industry, maintenance has traditionally consisted of scheduled maintenance at fixed intervals and corrective maintenance after failures.　　In recent years, however, predictive maintenance, which detects early signs of failure to prevent unexpected equipment stoppages, has become increasingly important. In rotary machinery such as bearings and motors, component damage or insufficient lubrication generates minute abnormal vibrations in the high-frequency range up to 20 kHz before failures become serious. Measuring such high-frequency vibrations is challenging due to interference from noise, and detection has often relied on the experience of skilled technicians using auditory inspection.　　By combining its long-established piezoelectric ceramic vibration detection technology with advanced circuit packaging expertise, Murata has developed the PKGM-210D-R, capable of detecting vibrations up to 20 kHz, the upper limit of the audible range. This enables detection of subtle high-frequency abnormal vibrations that were previously identified only by human hearing.　　The product supports early prediction of equipment issues, helping to reduce downtime, optimize maintenance timing, extend component life, and minimize excess inventory. In addition, its compact size of 0.20 × 0.20 × 0.14 inches (5.0 × 5.0 × 3.5 mm) allows easy retrofitting to existing equipment or direct integration into motor components.　　Key features:　　Z-axis direction detection up to 20 kHz　　Compact size (0.20 × 0.20 × 0.14 inch / 5.0 × 5.0 × 3.5 mm) for easy retrofit and built-in mounting　　Built-in driver and filter circuits　　Versatile single analog output　　Built-in temperature sensor

Key word：

Murata

Release time：2026-03-19 17:06 reading：503 Continue reading>>

Trade news

Renesas Announces General Availability of Renesas 365

　　Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the general availability of Renesas 365, Powered by Altium, an intelligent, model-based platform that integrates device exploration, model-based system development and early concept validation on a single unified platform. Built on a cloud environment, Renesas 365 is an industry-first platform designed to bring silicon and systems together across an open ecosystem at scale.　　In modern embedded design, engineers often struggle with disconnected workflows, manual component searches and limited system-level awareness. Renesas 365 directly addresses such challenges by connecting previously isolated tools such as embedded software files, datasheets and application notes into a streamlined, cloud-managed platform. With Renesas 365, engineering teams can collaboratively explore architectures, co-develop hardware and software and make system-level design decisions backed by real-time insights.　　Following its concept introduction, Renesas is now launching the first phase of Renesas 365 by integrating over 550 variants of the RA family of microcontrollers (MCUs), an industry-leading Arm®-based MCU portfolio together with a full suite of development tools.　　Using model-based evaluation and optimization technology, engineers can now rely on Renesas 365 as an intelligent design environment that actively assists with selecting the right MCU based on full system requirements. Rather than filtering datasheets in isolation, engineers receive guided recommendations informed by pin usage, peripherals, timing, power and how devices align with system building blocks. This means tasks that typically take an engineer an hour reviewing data sheets and tool requirements can now be accomplished in minutes, dramatically reducing evaluation time. This system-level intelligence accelerates design convergence, minimizes downstream rework and enables faster time to market while supporting more robust, efficient and cost-effective embedded designs.　　“The general availability of Renesas 365 marks a pivotal milestone in realizing Renesas’ Digitalization Vision,” said Gaurang Shah, Vice President and General Manager of Embedded Processing at Renesas. “By delivering the first phase of an intelligent design environment that supports early-stage development, we are laying the groundwork for the next phase, where hardware and software subsystem elements will be maintained within Renesas 365. This helps our customers build, scale and sustain next-generation software-defined products faster and at lower cost.”　　Together with the e²studio integrated development environment (IDE), Flexible Software Package (FSP) and smart documentation, engineers can leverage integrated design workflows specifically created for RA MCU devices, including sensing, power management and compiler support.　　Key features of Renesas 365 include:　　Model-based component and system exploration, discovery and selection　　Digital continuity across systems, hardware and software workflows　　AI-assisted guidance on design constraints, resource management, and error resolution　　Over-the-air (OTA) device management for RA MCUs　　Existing customers can link their current projects in e²studio with Renesas 365 and start using the platform immediately, while developers starting a new project are guided through system-level component and solution discovery to identify compatible devices and evaluate feasibility. This system-level context awareness significantly accelerates early-stage development and reduces iterations.　　Digitally Connected Hardware and Software Configurations　　As engineers make modifications to their system, the platform automatically records iterations and connects them with system-level design elements so teams can revisit any previous hardware and software configurations. With a context-aware smart system, Renesas 365 helps identify resource or design constraints, suggests resolutions and assists teams to make design decisions with fewer iterations and confidence. Moreover, Renesas 365 lets customers manage and update RA-based devices even after initial design through an integrated over-the-air (OTA) capability.　　An Open Platform Built for Flexibility　　Renesas 365 is an open, scalable platform that mirrors how electronic systems are developed in the real world. Developers have the option to incorporate third-party components, sensors and partner tools directly into their system designs. This open approach allows teams to evaluate tradeoffs and consider mixed vendor architectures to customize solutions with integrated system-level context.　　Growing the Renesas 365 Ecosystem　　Now under development, the next phase of Renesas 365 will pave the way for completed subsystem building blocks to be modeled as platform-maintained components. As part of this effort, more Renesas product families will be supported, and the component ecosystem will include more third-party devices. Subsystem components such as peripheral configuration, power management and software will be automatically defined, maintained and validated for compatibility. With these customizable building blocks, customers will accelerate time to market, reduce engineering effort, and gain access to cutting-edge technologies.　　Renesas will showcase Renesas 365 at embedded world 2026 in Nuremberg in two separate locations.　　Renesas 365 Booth (Hall 4, Stand 305/4-305): Dedicated to the Renesas 365 solution, Booth 4-305 will feature live demonstrations on integrated RA workflows, model-based system exploration and intelligent validation.　　Renesas Booth (Hall 1, Stand 234/1-234): Showcasing products across Renesas’ comprehensive portfolio of leading-edge semiconductor solutions with presentations and demos.

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Release time：2026-03-18 13:11 reading：616 Continue reading>>

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