| SQ2310ES-T1_GE3 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 5A, 4.5V |
| Power - Max | 2W |
| Supplier Device Package | TO-236 |
| Gate Charge (Qg) @ Vgs | 8.5nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 485pF @ 10V |
| ECCN | ECL99 |
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