SPP06N80C3XKSA1
  • 量产中
  • EAR99
产品描述:
Single N-Channel 800 V 900 mOhm 31 nC CoolMOS™ Power Mosfet - TO-220-3
标准包装:1
数据手册: --
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Width: 4.57 mm
Rds On - Drain-Source Resistance: 780 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-220-3
Height: 15.95 mm
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 8 ns
Length: 10.36 mm
Series: XPP06N80
Factory Pack Quantity: 500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 72 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 800 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 41 nC
Pd - Power Dissipation: 83 W
Tradename: CoolMOS
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Configuration: 1 N-Channel
Unit Weight: 0.211644 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 25 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: SP000683154 SPP06N80C3 SPP06N80C3XK
RoHS:  Details
Id - Continuous Drain Current: 6 A
Rise Time: 15 ns
Maximum Operating Temperature: + 150 C
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