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| 产品描述：
LFPAK56D/Dual N-channel TrenchMOS logic level FET/12NC:934066978115
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | SOT-1205, 8-LFPAK56 |
| Power - Max | 32W |
| Supplier Device Package | LFPAK56D |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Arrays |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Packaging | Digi-Reel® |
| FET Feature | Logic Level Gate |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Power - Max | 32W |
| Supplier Device Package | LFPAK56D |
| PCN Packaging | Leader/Trailer Update 03/Apr/2015 |
| Current - Continuous Drain (Id) @ 25掳C | 16A |
| FET Type | 2 N-Channel (Dual) |
| Series | TrenchMOS鈩�/a> |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 725pF @ 25V |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 5A, 10V |
| PCN Assembly/Origin | TrenchMOS Silicon Process 19/Sep/2014 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| FET Type | 2 N-Channel (Dual) |
| Series | TrenchMOS™ |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 725pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 5A, 10V |
| PCN Assembly/Origin | TrenchMOS Silicon Process 19/Sep/2014 TrenchMOS Silicon Process Revision 17/Jan/2015 |
| Drain to Source Voltage (Vdss) | 60V |
| Standard Package | 1,500 |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Arrays |
| Mounting Type | Surface Mount |
| 数据手册： |
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