| IPT020N10N3ATMA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 100 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - HSOF-8-1
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 252 nC |
| Pd - Power Dissipation: | 300 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Fall Time: | 37 ns |
| Forward Transconductance - Min: | 320 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPT020N10N3 SP001100160 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 300 A |
| Rise Time: | 17 ns |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 440 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | HSOF-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 30 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 2000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 149 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Operating Temperature: | + 150 C |
登录之后就可发表评论
请输入下方图片中的验证码：