| BSS670S2LH6327XTSA1 | ||
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| 产品描述：
Single N-Channel 55 V 650 mOhm 1.7 nC OptiMOS™ Enhancement Mode Mosfet - SOT-23
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| 标准包装：3000 | ||
| 数据手册： -- |
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| Width: | 1.3 mm |
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| Rds On - Drain-Source Resistance: | 650 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9 ns |
| Forward Transconductance - Min: | 1.2 S |
| Series: | BSS670S2 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 21 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Qg - Gate Charge: | 1.7 nC |
| Pd - Power Dissipation: | 360 mW |
| Package / Case: | SOT-23-3 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 24 ns |
| Length: | 2.9 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSS670S2L BSS670S2LH6327XT H6327 SP000928950 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 540 mA |
| Rise Time: | 25 ns |
| Maximum Operating Temperature: | + 150 C |
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