IPW60R070C6FKSA1
IPW60R070C6FKSA1
  • ACTIVE
  • EAR99
Product description : Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
SPQ:1
Datasheet : --
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Width: 5.21 mm
Rds On - Drain-Source Resistance: 63 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-247-3
Height: 21.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 5 ns
Length: 16.13 mm
Series: XPW60R070
Factory Pack Quantity: 240
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 83 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 170 nC
Pd - Power Dissipation: 391 W
Tradename: CoolMOS
Vgs th - Gate-Source Threshold Voltage: 3 V
Configuration: Single
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 16 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: IPW60R070C6 IPW60R070C6XK SP000645060
RoHS:  Details
Id - Continuous Drain Current: 53 A
Rise Time: 12 ns
Maximum Operating Temperature: + 150 C
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Supplier Code:SP1027

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$9.02875

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stock61603Update On
2025-02-02
Lead-Time0Weeks
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DateCode2201

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