BSC340N08NS3GATMA1
  • 量产中
  • EAR99
产品描述:
N-Channel 80 V 34 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Width: 6.35 mm
Rds On - Drain-Source Resistance: 34 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8 ns
Forward Transconductance - Min: 16 S
Series: BSC340N08
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 11 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 80 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 6.8 nC
Pd - Power Dissipation: 32 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 2 ns
Length: 6.35 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSC340N08NS3 BSC340N08NS3GXT G SP000447534
RoHS:  Details
Id - Continuous Drain Current: 23 A
Rise Time: 3 ns
Maximum Operating Temperature: + 150 C
登录之后就可发表评论

请输入下方图片中的验证码:

验证码