| IPB60R190C6ATMA1 | ||
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| 产品描述：
TO263-3/COOL MOS
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| 标准包装：1 | ||
| 数据手册： -- |
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 63 nC |
| Pd - Power Dissipation: | 151 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 9 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPB60R190C6 IPB60R190C6XT SP000641916 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 59 A |
| Rise Time: | 11 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-263-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Series: | XPB60R190 |
| Factory Pack Quantity: | 1000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 110 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
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