| BSZ060NE2LSATMA1 | ||
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| 产品描述：
Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 5.9 nC |
| Pd - Power Dissipation: | 26 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2.5 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSZ060NE2LS BSZ060NE2LSXT SP000776122 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 40 A |
| Rise Time: | 2.2 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 5 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TSDSON-8 |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 1.8 nS |
| Forward Transconductance - Min: | 34 S |
| Series: | BSZ060NE2 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 11 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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