PBSS8110Z,135
  • 量产中
  • ECL99
产品描述:
PBSS8110Z Series 100 V 1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-223
标准包装:4000
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Width: 3.7 mm
Emitter- Base Voltage VEBO: 5 V
Packaging: Reel
Length: 6.7 mm
Manufacturer: NXP
Minimum Operating Temperature: - 65 C
Factory Pack Quantity: 4000
Brand: NXP Semiconductors
Package / Case: SC-73
Collector- Emitter Voltage VCEO Max: 100 V
Height: 1.7 mm
Mounting Style: SMD/SMT
ECCN ECL99
DC Current Gain hFE Max: 150 at 1 mA at 10 V
Maximum DC Collector Current: 1 A
Collector- Base Voltage VCBO: 120 V
DC Collector/Base Gain hfe Min: 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 0.5 A at 10 V, 80 at 1 A at 10 V
Pd - Power Dissipation: 1400 mW
Transistor Polarity: NPN
Part # Aliases: /T3 PBSS8110Z
RoHS:  Details
Product Category: Bipolar Transistors - BJT
Gain Bandwidth Product fT: 100 MHz
Configuration: Single
Maximum Operating Temperature: + 150 C
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