| IRFR1N60ATRPBF | ||
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| 产品描述：
Single N-Channel 600 V 7 Ohms Surface Mount Power Mosfet - TO-252
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| 标准包装：1 | ||
| 数据手册： -- |
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| Qg - Gate Charge: | 14 nC |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9.8 ns |
| Forward Transconductance - Min: | 0.88 S |
| Series: | IRF/SIHRx1N60A |
| Factory Pack Quantity: | 2000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.4 A |
| Rise Time: | 14 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 7 Ohms |
| Width: | 6.22 mm |
| Pd - Power Dissipation: | 36 W |
| Package / Case: | TO-252-3 |
| Height: | 2.39 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 20 ns |
| Length: | 6.73 mm |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 18 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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