IXFN170N30P
IXFN170N30P
  • ACTIVE
  • EAR99
Product description : Module; single transistor; 300V; 138A; SOT227B; Ugs: ±30V; screw
SPQ:1
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Width: 25.42 mm
Rds On - Drain-Source Resistance: 18 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOT-227-4
Height: 12.22 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 16 ns
Length: 38.23 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 79 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 300 V
Type: Polar Power MOSFET HiPerFET
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Qg - Gate Charge: 258 nC
Pd - Power Dissipation: 890 W
Tradename: Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Configuration: Single
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 41 ns
Forward Transconductance - Min: 57 S
Series: IXFN170N30
Factory Pack Quantity: 10
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 138 A
Rise Time: 29 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
You can comment after logging in.
Out of stock, Please InquiryRFQ

Please enter the verification code in the image below:

verification code