STL13DP10F6 specifications -Ameya360 electronic components purchase network


STL13DP10F6

ACTIVE EAR99
Product description : N-Channel 100 V 3.3 A 180 mOhm STripFET VI DeepGATE Mosfet - POWER FLAT
SPQ：3000
Datasheet : STL13DP10F6.pdf

Packaging:	Reel
Qg - Gate Charge:	16.5 nC
Pd - Power Dissipation:	4 W
Package / Case:	PowerFlat-8
Configuration:	Dual
Mounting Style:	SMD/SMT
Fall Time:	4.5 ns
Manufacturer:	STMicroelectronics
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	24 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	2 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	180 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	+/- 20 V
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	10.5 ns
Series:	P-channel STripFET
Factory Pack Quantity:	3000
Brand:	STMicroelectronics
RoHS:	Details
Id - Continuous Drain Current:	3.3 A
Rise Time:	4.8 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： STL13DP10F6.pdf

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Stock code :	887137
Mfg name :	STMicroelectronics
MPN :	STL13DP10F6
Product description :	N-Channel 100 V 3.3 A 180 mOhm STripFET VI DeepGATE Mosfet - POWER FLAT

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