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| 产品描述：
N-Channel 100 V 3.3 A 180 mOhm STripFET VI DeepGATE Mosfet - POWER FLAT
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| 标准包装：3000 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 16.5 nC |
| Pd - Power Dissipation: | 4 W |
| Package / Case: | PowerFlat-8 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4.5 ns |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 24 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 10.5 ns |
| Series: | P-channel STripFET |
| Factory Pack Quantity: | 3000 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 3.3 A |
| Rise Time: | 4.8 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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