| IPL60R650P6SATMA1 | ||
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| 产品描述：
N-Channel 600 V 650 mOhm 12 nC CoolMOS™ P6 Power Transistor - ThinPAK 5x6
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.4A, 10V |
| Power - Max | 56.8W |
| Supplier Device Package | 8-ThinPak (5x6) |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 557pF @ 100V |
| ECCN | EAR99 |
| 数据手册： |
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