SI5504BDC-T1-E3 specifications -Ameya360 electronic components purchase network


SI5504BDC-T1-E3

ACTIVE 1206-8 ChipFET™ EAR99
Product description : Dual N & P Channel 30 V 0.065/0.014 Ohms SMT Power Mosfet - 1206-8 ChipFET
SPQ：1
Datasheet : SI5504BDC-T1-E3.pdf

FET Feature	Logic Level Gate
Package / Case	8-SMD, Flat Lead
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A, 3.7A
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	65 mOhm @ 3.1A, 10V
Power - Max	3.12W, 3.1W
Supplier Device Package	1206-8 ChipFET™
Gate Charge (Qg) @ Vgs	7nC @ 10V
Category	Discrete Semiconductor Products
FET Type	N and P-Channel
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	220pF @ 15V
ECCN	EAR99

Datasheet： SI5504BDC-T1-E3.pdf

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Stock code :	858363
Mfg name :	Vishay
MPN :	SI5504BDC-T1-E3
Product description :	Dual N & P Channel 30 V 0.065/0.014 Ohms SMT Power Mosfet - 1206-8 ChipFET

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