IRF5305PBF specifications -Ameya360 electronic components purchase network


IRF5305PBF

ACTIVE EAR99
Product description : Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRF5305PBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	60 mOhms
Pd - Power Dissipation:	110 W
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	14 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Typical Turn-Off Delay Time:	39 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 55 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Qg - Gate Charge:	42 nC
Packaging:	Tube
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 4 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	63 ns
Forward Transconductance - Min:	8 S
Transistor Polarity:	P-Channel
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	- 31 A
Rise Time:	66 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IRF5305PBF.pdf

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Stock code :	83501
Mfg name :	Infineon Technologies
MPN :	IRF5305PBF
Product description :	Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3

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