IRF7815TRPBF
  • 量产中
  • EAR99
产品描述:
Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
标准包装:1
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Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 34 mOhms
Pd - Power Dissipation: 2.5 W
Package / Case: SOIC-8
Configuration: Single
Unit Weight: 0.017870 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8.4 ns
Manufacturer: Infineon
Factory Pack Quantity: 4000
Typical Turn-Off Delay Time: 14 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Transistor Type: 1 N-Channel
ECCN EAR99
Qg - Gate Charge: 25 nC
Packaging: Reel
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 8.3 ns
Forward Transconductance - Min: 8.2 S
Transistor Polarity: N-Channel
Brand: Infineon Technologies
RoHS:  Details
Id - Continuous Drain Current: 5.1 A
Rise Time: 3.2 ns
Maximum Operating Temperature: + 150 C
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stock2841Update On
2025-06-03
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Supplier Code:SP1027

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$1.4787

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