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| 产品描述：
Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
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| 数据手册： -- |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
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| Package / Case | TO-3PL |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 18A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Mounting Type | Through Hole |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Power - Max | 180W |
| Supplier Device Package | TO-3P(L) |
| Part Status | Active |
| Manufacturer | Toshiba Semiconductor and Storage |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| Packaging | Bulk |
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