| IXFX420N10T | ||
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| 产品描述：
Single N-Channel 100 V 1670 W 670 nC Through Hole Power Mosfet - PLUS247
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| 标准包装：30 | ||
| 数据手册： |
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| Width: | 5.21 mm |
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| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Height: | 21.34 mm |
| Unit Weight: | 0.056438 oz |
| Fall Time: | 255 ns |
| Length: | 16.13 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 115 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Type: | GigaMOS Trench HiperFET Power MOSFET |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 670 nC |
| Pd - Power Dissipation: | 1.67 kW |
| Tradename: | GigaMOS, HiperFET |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Typical Turn-On Delay Time: | 47 ns |
| Forward Transconductance - Min: | 110 S |
| Series: | IXFX420N10 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 420 A |
| Rise Time: | 155 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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