IXFX420N10T specifications -Ameya360 electronic components purchase network


IXFX420N10T

ACTIVE EAR99
Product description : Single N-Channel 100 V 1670 W 670 nC Through Hole Power Mosfet - PLUS247
SPQ：30
Datasheet : IXFX420N10T.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	2.6 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Unit Weight:	0.056438 oz
Fall Time:	255 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	115 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Type:	GigaMOS Trench HiperFET Power MOSFET
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	670 nC
Pd - Power Dissipation:	1.67 kW
Tradename:	GigaMOS, HiperFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	47 ns
Forward Transconductance - Min:	110 S
Series:	IXFX420N10
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	420 A
Rise Time:	155 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IXFX420N10T.pdf

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Stock code :	806101
Mfg name :	IXYS Corporation
MPN :	IXFX420N10T
Product description :	Single N-Channel 100 V 1670 W 670 nC Through Hole Power Mosfet - PLUS247

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