| CSD23202W10 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MOSFET P-CH 12V 2.2A 4DSBGA
|
||
| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | 4-UFBGA, DSBGA |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 53 mOhm @ 500mA, 4.5V |
| Power - Max | 1W |
| Supplier Device Package | 4-DSBGA (1x1) |
| Gate Charge (Qg) @ Vgs | 3.8nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 512pF @ 6V |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：