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| 产品描述：
IGBT 600V 155A 536W TO264-3
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| 标准包装：1000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 1.45 V |
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| Continuous Collector Current Ic Max: | 155 A |
| Length: | 26.49 mm |
| Pd - Power Dissipation: | 536 W |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 53 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 600 nA |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Gate Emitter Voltage: | 30 V |
| Width: | 20.5 mm |
| Continuous Collector Current: | 155 A |
| Manufacturer: | Microsemi |
| Operating Temperature Range: | - 55 C to + 175 C |
| Continuous Collector Current at 25 C: | 155 A |
| Brand: | Microsemi |
| Package / Case: | TO-264-3 |
| Product Category: | IGBT Transistors |
| Height: | 5.21 mm |
| Unit Weight: | 0.373904 oz |
| Maximum Operating Temperature: | + 175 C |
| ECCN | EAR99 |
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