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| 产品描述：
Dual P-Channel 60 V 0.085 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 4 mm |
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| Rds On - Drain-Source Resistance: | 125 mOhms |
| Pd - Power Dissipation: | 2.15 W |
| Package / Case: | SOIC-8 |
| Configuration: | Dual Dual Drain |
| Unit Weight: | 0.002610 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 3.5 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 1.5 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 10 ns |
| Length: | 5 mm |
| Series: | ZXMC6A |
| Factory Pack Quantity: | 500 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 3.9 A |
| Rise Time: | 4.1 ns |
| Maximum Operating Temperature: | + 150 C |
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