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| 产品描述:
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
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| 标准包装:1000 | ||
| 数据手册: |
| Width: | 3.7 mm |
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| Rds On - Drain-Source Resistance: | 75 mOhms |
| Pd - Power Dissipation: | 3.9 W |
| Package / Case: | SOT-223-3 |
| Configuration: | Single Dual Drain |
| Unit Weight: | 0.000282 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2.55 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 28.61 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 1.65 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7.35 ns |
| Length: | 6.7 mm |
| Series: | ZXMN4A |
| Factory Pack Quantity: | 1000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 7 A |
| Rise Time: | 4.45 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册: |
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