ZTX853
  • 量产中
  • ECL99
产品描述:
ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
标准包装:1
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Collector-Emitter Saturation Voltage: 160 mV
Collector- Base Voltage VCBO: 200 V
Minimum Operating Temperature: - 55 C
Package / Case: TO-92
Gain Bandwidth Product fT: 130 MHz
Unit Weight: 0.016000 oz
Emitter- Base Voltage VEBO: 6 V
DC Current Gain hFE Max: 100 at 10 mA at 2 V
Length: 4.77 mm
Manufacturer: Diodes Incorporated
Transistor Polarity: NPN
Brand: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
Width: 2.41 mm
Packaging: Reel
Pd - Power Dissipation: 1.2 W
Height: 4.01 mm
Configuration: Single
Mounting Style: Through Hole
Maximum DC Collector Current: 4 A
Continuous Collector Current: 4 A
DC Collector/Base Gain hfe Min: 100 at 10 mA at 2 V, 100 at 2 A at 2 V, 50 at 4 A at 2 V, 20 at 10 A at 2 V
Series: ZTX853
Factory Pack Quantity: 4000
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 100 V
ECCN ECL99
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