| ZHB6792TA | ||
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| 产品描述：
ZHB6792 Series NPN/PNP 70 V 1A 1.25 W Bipolar Transistor H-Bridge -SM-8
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| 标准包装：1000 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | - 0.5 V |
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| Collector- Base Voltage VCBO: | 70 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | SM-8 |
| Gain Bandwidth Product fT: | 100 MHz, 150 MHz |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 1 A |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hfe Min: | 500 at 100 mA at 2 V at NPN, 400 at 500 mA at 2 V at NPN, 150 at 1 A at 2 V at NPN, 300 at 10 mA at 2 V at PNP, 250 at 500 mA at 2 V at PNP, 200 at 1 A at 2 V at PNP |
| Series: | ZHB67 |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 70 V |
| ECCN | EAR99 |
| Width: | 3.7 mm (Max) |
| Packaging: | Reel |
| Pd - Power Dissipation: | 2000 mW |
| Height: | 1.6 mm (Max) |
| Configuration: | Quad |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain hFE Max: | 500 |
| Length: | 6.7 mm (Max) |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | NPN, PNP |
| Brand: | Diodes Incorporated |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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