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| 产品描述：
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
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| 标准包装：1 | ||
| 数据手册： |
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| Product: | MOSFET Small Signal |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 4.01 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Length: | 4.77 mm |
| Series: | VN10 |
| Factory Pack Quantity: | 4000 |
| Brand: | Diodes Incorporated |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Type: | FET |
| ECCN | EAR99 |
| Width: | 2.41 mm |
| Rds On - Drain-Source Resistance: | 7.5 Ohms |
| Pd - Power Dissipation: | 625 mW |
| Package / Case: | TO-92-3 |
| Configuration: | Single |
| Unit Weight: | 0.016000 oz |
| Number of Channels: | 1 Channel |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| RoHS: | Details |
| Id - Continuous Drain Current: | 270 mA |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
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