TP5335K1-G specifications -Ameya360 electronic components purchase network

FET Feature	Standard
Package / Case	T/R
Drain to Source Voltage (Vdss)	350V
Current - Continuous Drain (Id) @ 25°C	85mA (Tj)
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id	2.4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
SDP	3-SOT-23 1.3mm
Rds On (Max) @ Id, Vgs	30 Ohm @ 200mA, 10V
Power - Max	360mW
Supplier Device Package	TO-236AB (SOT23)
Part Status	Active
Manufacturer	Microchip Technology
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	110pF @ 25V
ECCN	EAR99

Datasheet： TP5335K1-G.pdf

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P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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