SPP20N65C3XKSA1 specifications -Ameya360 electronic components purchase network


SPP20N65C3XKSA1

ACTIVE EAR99
Product description : HIGH POWER_LEGACY
SPQ：1
Datasheet : SPP20N65C3XKSA1.pdf

Packaging:	Tube
Qg - Gate Charge:	87 nC
Pd - Power Dissipation:	208 W
Tradename:	CoolMOS
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Forward Transconductance - Min:	17.5 S
Series:	SPP20N65
Factory Pack Quantity:	500
Part # Aliases:	SP000681064 SPP20N65C3 SPP20N65C3XK
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	650 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	160 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	4.5 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	20.7 A
Rise Time:	5 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： SPP20N65C3XKSA1.pdf

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