| SCT2160KEC | ||
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| Product description : 1200 V 160 mOhm 20 A Surface Flange Mount 2G SiC MosFet - TO-247-3 | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Qg - Gate Charge: | 62 nC |
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| Packaging: | Tube |
| Technology: | SiC |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 23 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Part # Aliases: | SCT2160KE |
| Typical Turn-Off Delay Time: | 67 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Transistor Type: | 1 N-Channel |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 800V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Drain to Source Voltage (Vdss) | 1200V |
| Packaging | Tube |
| Vgs (Max) | +22V, -6V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Pd - Power Dissipation: | 165 W |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Fall Time: | 27 ns |
| Forward Transconductance - Min: | 2.4 S |
| Series: | SCT2160KE |
| Factory Pack Quantity: | 360 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 22 A |
| Rise Time: | 25 ns |
| ECCN | EAR99 |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 208 mOhm @ 7A, 18V |
| Supplier Device Package | TO-247 |
| Power Dissipation (Max) | 165W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Datasheet： |
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