SCT2080KEC
  • 1 (Unlimited)
  • EOL
  • TO-247
Product description : SCT2080KEC Series N-Channel 1200 V 117 mOhm 106 nC SIC Power Mosfet - TO-247
SPQ:1
Datasheet :
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Online Catalog Silicon Carbide (SiC) Standard FETs
Supplier Device Package TO-247
Input Capacitance (Ciss) @ Vds 2080pF @ 800V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Power - Max 262W
Operating Temperature 175°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 800V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Drain to Source Voltage (Vdss) 1200V
Packaging Tube
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package / Case TO-247-3
Gate Charge (Qg) @ Vgs 106nC @ 18V
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 117 mOhm @ 10A, 18V
Mounting Type Through Hole
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 117 mOhm @ 10A, 18V
Supplier Device Package TO-247
Power Dissipation (Max) 262W (Tc)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Datasheet:
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