| RSU002P03T106 | ||
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| 产品描述：
P-Channel 0.2 W -30 V 2.4 Ohm Surface Mount 4 V Drive MosFet - UMT-3
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| 标准包装：3000 | ||
| 数据手册： |
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| Packaging: | Reel |
|---|---|
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 200 mW |
| Package / Case: | UMT-3 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 5 ns |
| Length: | 2 mm |
| Series: | RSU002P03 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 250 mA |
| Rise Time: | 5 ns |
| Type: | MOSFET |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V |
| Supplier Device Package | UMT3 |
| Power Dissipation (Max) | 200mW (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Width: | 1.25 mm |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Technology: | Si |
| Height: | 0.8 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Package / Case | SC-70, SOT-323 |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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