| RSR020N06TL | ||
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| 产品描述：
MOSFET N-CH 60V 2A TSMT3
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 120 mOhms |
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| Number of Channels: | 1 Channel |
| Series: | RSR020N06 |
| Minimum Operating Temperature: | - 55 C |
| Channel Mode: | Enhancement |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 10V |
| Supplier Device Package | TSMT3 |
| Power Dissipation (Max) | 540mW (Ta) |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Packaging: | Reel |
| Manufacturer: | ROHM Semiconductor |
| Pd - Power Dissipation: | 1 W |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| Package / Case: | TSMT-3 |
| Id - Continuous Drain Current: | 2 A |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | SC-96 |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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