RSD201N10TL
  • 1 (Unlimited)
  • 不建议用于新设计
  • CPT3
  • EAR99
产品描述:
MOSFET N-CH 100V 20A CPT3
标准包装:2500
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Rds On (Max) @ Id, Vgs 46 mOhm @ 20A, 10V
Power - Max 850mW
Supplier Device Package CPT3
Gate Charge (Qg) @ Vgs 55nC @ 10V
Category Discrete Semiconductor Products
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Packaging Tape & Reel (TR)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Part Status Active
Manufacturer Rohm Semiconductor
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 2100pF @ 25V
ECCN EAR99
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
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