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| 产品描述：
QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor
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| 标准包装：1000 | ||
| 数据手册： |
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| Width: | 2.2 mm |
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| Fall Time: | 15 us |
| Length: | 2.7 mm |
| Peak Wavelength: | 940 nm |
| Pd - Power Dissipation: | 75 mW |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Package / Case: | T-3/4 |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Dark Current: | 100 nA |
| Unit Weight: | 0.003175 oz |
| Maximum Operating Temperature: | + 85 C |
| Lens Color/Style: | Black Transparent |
| Packaging: | Reel |
| Manufacturer: | Fairchild Semiconductor |
| Operating Supply Voltage: | 5 V |
| Minimum Operating Temperature: | - 25 C |
| Brand: | Fairchild Semiconductor |
| Half Intensity Angle Degrees: | 12 deg |
| Product Category: | Phototransistors |
| Height: | 3 mm |
| Rise Time: | 15 us |
| Type: | Photo Transistor |
| ECCN | EAR99 |
| 数据手册： |
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