| IRF60B217 | ||
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| Product description : Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | StrongIRFET™ |
| Vgs(th) (Max) @ Id | 3.7V @ 50µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 36A, 10V |
| Power - Max | 83W |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 2230pF @ 25V |
| ECCN | EAR99 |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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