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| 产品描述：
SOT23-3/20 V, P-channel Trench MOSFET/12NC:934068708215
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Part Status | Active |
| Manufacturer | NXP Semiconductors |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 618pF @ 10V |
| ECCN | ECL99 |
| Rds On (Max) @ Id, Vgs | 78 mOhm @ 2.8A, 4.5V |
| Power - Max | 480mW |
| Supplier Device Package | TO-236AB (SOT23) |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
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