| BFP640ESDH6327XTSA1 | ||
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| 产品描述：
BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
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| 标准包装：3000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Noise Figure (dB Typ @ f) | 0.6dB ~ 2dB @ 150MHz ~ 10GHz |
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| Package / Case | SC-82A, SOT-343 |
| Gain | 7dB ~ 30dB |
| Supplier Device Package | SOT-343 |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Family | Transistors - Bipolar (BJT) - RF |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
| ECCN | EAR99 |
| Frequency - Transition | 46GHz |
| Power - Max | 200mW |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| Mounting Type | Surface Mount |
| Packaging | Digi-Reel® |
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